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UZXMHC6A07T8TC

型号：

UZXMHC6A07T8TC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

10 页

PDF大小：

286 K

下载PDF手册
ZXMHC6A07T8  
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE  
SUMMARY  
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A  
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
FEATURES  
SM8  
•
•
•
•
•
Low On - Resistance  
Fast switching speed  
Low threshold  
S
S
4
1
G
G
1
4
3
Low gate drive  
SM8 package  
D , D  
D , D  
3 4  
1
2
APPLICATIONS  
•
Motor drive  
G
G
2
S
S
3
2
ORDERING INFORMATION  
PINOUT DIAGRAM  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
1000 units  
4000 units  
ZXMHC6A07T8TA  
ZXMHC6A07T8TC  
7’‘  
12m m  
12m m  
13’‘  
DEVICE MARKING  
•
ZXMH  
C6A07  
Top View  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
1
ZXMHC6A07T8  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL N-Channel P-Ch a n n e l  
UNIT  
V
Dra in -S o u rce Vo lta g e  
Ga te -S o u rce Vo lta g e  
V
60  
-60  
DS S  
GS  
V
Ϯ20  
Ϯ20  
V
(b )(d )  
(b )(d )  
(a )(d )  
Co n tin u o u s Dra in Cu rre n t@V =10V; T =25ЊC  
I
1.8  
1.4  
1.6  
-1.5  
-1.2  
-1.3  
A
A
GS  
A
D
@V =10V; T =70ЊC  
GS  
A
@V =10V; T =25ЊC  
GS  
A
(c)  
Pu ls e d Dra in Cu rre n t  
I
I
I
8.7  
2.3  
8.7  
-7.5  
-2.1  
-7.5  
A
A
A
DM  
(b )  
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )  
S
(c)  
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )  
S M  
(a )(d )  
Po w e r Dis s ip a tio n a t T =25°C  
A
P
1.3  
W
D
10.4  
m W/°C  
Lin e a r De ra tin g Fa cto r  
(b )(d )  
Po w e r Dis s ip a tio n a t T =25°C  
A
P
1.7  
W
D
13.6  
m W/°C  
Lin e a r De ra tin g Fa cto r  
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
96  
UNIT  
°C/W  
°C/W  
(a )(d )  
J u n ctio n to Am b ie n t  
R
R
θJ A  
θJ A  
(b )(d )  
J u n ctio n to Am b ie n t  
73  
Notes  
(a) For a device surface m ounted on 50m m x 50m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on FR4 PCB m easured 1.6m m at t ≤ 10sec.  
(c) Repetitive rating - 50m m x 50m m x 1.6m m FR4 PCB, D = 0.2, pulse width 300␮S pulse width lim ited by m axim um junction tem perature. Refer  
to Transient Therm al Im pedance graph.  
(d) For device with one active die.  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
2
ZXMHC6A07T8  
TYPICAL CHARACTERISTICS  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
3
ZXMHC6A07T8  
N-CHANNEL  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)  
PARAMETER  
S YMBOL  
MIN.  
TYP.  
MAX. UNIT CONDITIONS  
S TATIC  
Dra in -S o u rce Bre a kd o w n Vo lta g e  
Ze ro Ga te Vo lta g e Dra in Cu rre n t  
Ga te -Bo d y Le a ka g e  
V
60  
V
µA  
n A  
V
I =250µA, V =0V  
D GS  
(BR)DS S  
I
I
1
V
=60V, V =0V  
DS S  
DS GS  
100  
3.0  
V
=±20V, V =0V  
GS S  
GS DS  
Ga te -S o u rce Th re s h o ld Vo lta g e  
Static Drain-Source On-State Resistance  
V
R
1
I =250µA, V = V  
DS GS  
D
GS (th )  
DS (o n )  
(1)  
0.300  
0.450  
V
V
=10V, I =1.8A  
D
Ω
Ω
GS  
GS  
=4.5V, I =1.3A  
D
(1)(3)  
Fo rw a rd Tra n s co n d u cta n ce  
g
2.3  
S
V
=15V,I =1.8A  
D
fs  
DS  
(3)  
DYNAMIC  
In p u t Ca p a cita n ce  
C
C
C
166  
19.5  
8.7  
p F  
p F  
p F  
is s  
V
=40V, V =0V,  
DS  
GS  
Ou tp u t Ca p a cita n ce  
f=1MHz  
o s s  
rs s  
Re ve rs e Tra n s fe r Ca p a cita n ce  
(2) (3)  
S WITCHING  
Tu rn -On De la y Tim e  
Ris e Tim e  
t
t
t
t
1.8  
1.4  
n s  
n s  
n s  
n s  
n C  
d (o n )  
V
R
=30V, I =1.8A  
D
r
DD  
≅6.0Ω, V =10V  
G
GS  
Tu rn -Off De la y Tim e  
Fa ll Tim e  
4.9  
d (o ff)  
f
2.0  
Ga te Ch a rg e  
Q
1.65  
V
=30V,V =5V,  
g
DS GS  
ID=1.8A  
To ta l Ga te Ch a rg e  
Q
Q
Q
3.2  
n C  
n C  
n C  
g
V
=30V,V =10V,  
GS  
DS  
Ga te -S o u rce Ch a rg e  
Ga te -Dra in Ch a rg e  
S OURCE-DRAIN DIODE  
0.67  
0.82  
ID=1.8A  
g s  
g d  
(1)  
Dio d e Fo rw a rd Vo lta g e  
V
0.85  
0.95  
V
T =25°C, I =0.45A,  
J S  
S D  
V
=0V  
GS  
(3)  
Re ve rs e Re co ve ry Tim e  
t
20.5  
21.3  
n s  
T =25°C, I =1.8A,  
J F  
d i/d t= 100A/µs  
rr  
(3)  
Re ve rs e Re co ve ry Ch a rg e  
Q
n C  
rr  
NOTES  
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
4
ZXMHC6A07T8  
P-CHANNEL  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)  
PARAMETER  
S YMBOL  
MIN.  
TYP.  
MAX. UNIT CONDITIONS  
S TATIC  
Dra in -S o u rce Bre a kd o w n Vo lta g e  
Ze ro Ga te Vo lta g e Dra in Cu rre n t  
Ga te -Bo d y Le a ka g e  
V
-60  
V
␮A  
n A  
V
I =-250µA, V =0V  
D GS  
(BR)DS S  
I
I
-1  
V
=-60V, V =0V  
DS S  
DS GS  
100  
V
=±20V, V =0V  
GS S  
GS DS  
Ga te -S o u rce Th re s h o ld Vo lta g e  
Static Drain-Source On-State Resistance  
V
R
-1.0  
I =-250µA, V = V  
DS GS  
D
GS (th )  
DS (o n )  
(1)  
0.425  
0.630  
V
V
=-10V, I =-0.9A  
Ω
Ω
GS  
GS  
D
=-4.5V, I =-0.8A  
D
(1)(3)  
Fo rw a rd Tra n s co n d u cta n ce  
g
1.8  
S
V
=-15V,I =-0.9A  
D
fs  
DS  
(3)  
DYNAMIC  
In p u t Ca p a cita n ce  
C
C
C
233  
17.4  
9.6  
p F  
p F  
p F  
is s  
V
=-30 V, V =0V,  
DS  
GS  
Ou tp u t Ca p a cita n ce  
o s s  
rs s  
f=1MHz  
Re ve rs e Tra n s fe r Ca p a cita n ce  
(2) (3)  
S WITCHING  
Tu rn -On De la y Tim e  
Ris e Tim e  
t
t
t
t
1.6  
2.3  
13  
n s  
n s  
n s  
n s  
n C  
d (o n )  
r
V
R
=-30V, I =-1A  
D
DD  
≅
Ω, V =-10V  
G
6.0  
GS  
Tu rn -Off De la y Tim e  
Fa ll Tim e  
d (o ff)  
f
5.8  
2.4  
Ga te Ch a rg e  
Q
V
=-30V,V =-5V,  
g
DS GS  
I =-0.9A  
D
To ta l Ga te Ch a rg e  
Q
Q
Q
5.1  
0.7  
0.7  
n C  
n C  
n C  
g
V
=-30V,V =-10V,  
GS  
DS  
Ga te -S o u rce Ch a rg e  
Ga te -Dra in Ch a rg e  
S OURCE-DRAIN DIODE  
g s  
g d  
I =-0.9A  
D
(1)  
Dio d e Fo rw a rd Vo lta g e  
V
-0.85  
-0.95  
V
T =25°C, I =-0.8A,  
J S  
S D  
V
=0V  
GS  
(3)  
Re ve rs e Re co ve ry Tim e  
t
22.6  
23.2  
n s  
T =25°C, I =-0.9A,  
J F  
d i/d t= 100A/µs  
rr  
(3)  
Re ve rs e Re co ve ry Ch a rg e  
Q
n C  
rr  
NOTES  
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
5
ZXMHC6A07T8  
N-CHANNEL TYPICAL CHARACTERISTICS  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
6
ZXMHC6A07T8  
N-CHANNEL TYPICAL CHARACTERISTICS  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
7
ZXMHC6A07T8  
P-CHANNEL TYPICAL CHARACTERISTICS  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
8
ZXMHC6A07T8  
P-CHANNEL TYPICAL CHARACTERISTICS  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
9
ZXMHC6A07T8  
PACKAGE OUTLINE  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Inches  
DIM  
DIM  
Min Max Typ. Min Max Typ.  
Min Max Typ. Min Max Typ.  
A
-
1.7  
0.1  
-
-
-
0.067  
-
-
e1  
e2  
-
-
-
-
4.59  
-
-
-
-
0.1807  
A1 0.02  
-
0.7  
-
0.008 0.004  
1.53  
0.0602  
b
c
-
-
-
0.0275 He  
6.7  
0.9  
-
7.3  
-
-
-
0.264 0.287  
-
-
0.24 0.32  
0.009 0.013  
0.248 0.264  
0.130 0.145  
-
-
-
Lp  
␣
0.035  
-
15°  
-
D
E
6.3  
3.3  
6.7  
3.7  
-
15°  
-
-
-
-
-
-
␤
-
10°  
10°  
© Zetex Sem iconductors plc 2004  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquaters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Sem iconductors plc  
Lansdowne Road, Chadderton  
Oldham , OL9 9TY  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 1 - J ULY 2004  
S E M IC O N D U C T O R S  
10  
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