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UZXM62P03E6TC

型号：

UZXM62P03E6TC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

7 页

PDF大小：

283 K

下载PDF手册
ZXM62P03E6  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
FEATURES  
• Low on-resistance  
• Fast switching speed  
• Low threshold  
SOT23-6  
• Low gate drive  
• SOT23-6 package  
APPLICATIONS  
• DC - DC converters  
• Power management functions  
• Disconnect switches  
• Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXM62P03E6TA  
ZXM62P03E6TC  
7
8 embossed  
8 embossed  
3,000  
Pinout  
13  
10,000  
DEVICE MARKING  
2P03  
Top view  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
1
ZXM62P03E6  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate Source Voltage  
V
V
20  
V
V
A
DSS  
GS  
Ϯ12  
Continuous Drain Current (V =4.5V; T =25°C)(a)  
I
1.5  
1.2  
GS  
GS  
A
A
D
(V =4.5V; T =70°C)(a)  
Pulsed Drain Current (c)  
I
I
I
7.4  
0.54  
7.4  
A
A
A
DM  
S
Continuous Source Current (Body Diode)  
Pulsed Source Current (Body Diode)  
SM  
Power Dissipation at T =25°C (a)  
A
Linear Derating Factor  
P
625  
5
mW  
mW/°C  
D
Power Dissipation at T =25°C (b)  
A
Linear Derating Factor  
P
806  
6.4  
mW  
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
113  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
R
R
θJA  
θJA  
Junction to Ambient (b)  
73  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
2
ZXM62P03E6  
CHARACTERISTICS  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
3
ZXM62P03E6  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX.  
UNIT CONDITIONS  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
I
-30  
V
I =-250µA, V =0V  
(BR)DSS  
D
GS  
-1  
V
=-30V, V =0V  
GS  
µA  
nA  
V
DSS  
GSS  
DS  
GS  
I
V
=Ϯ20V, V =0V  
Ϯ100  
DS  
Gate-Source Threshold Voltage  
V
R
-1.0  
1.1  
I =-250µA, V = V  
GS(th)  
DS(on)  
DS  
GS  
D
Static Drain-Source On-State Resistance  
(1)  
0.15  
0.23  
V
V
=-10V, I =-1.6A  
Ω
Ω
GS  
GS  
D
=-4.5V, I =-0.8A  
D
Forward Transconductance (3)  
DYNAMIC (3)  
g
S
V
=-10V,I =-0.8A  
D
fs  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING (2) (3)  
Turn-On Delay Time  
Rise Time  
C
C
C
330  
120  
45  
pF  
pF  
pF  
iss  
V
=-25 V, V =0V,  
DS  
GS  
f=1MHz  
oss  
rss  
t
t
t
t
2.8  
6.4  
ns  
ns  
ns  
ns  
d(on)  
V
=-15V, I =-1.6A  
D
r
DD  
G
R =6.2Ω, R =25Ω  
(Refer to test circuit)  
D
Turn-Off Delay Time  
Fall Time  
13.9  
10.3  
d(off)  
f
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Q
Q
Q
10.2 nC  
g
V
=-24V,V =-10V,  
GS  
DS  
1.5  
3
nC  
nC  
ID=-1.6A  
gs  
gd  
(Refer to test circuit)  
V
-0.95  
V
T =25°C, I =-1.6A,  
j S  
V
SD  
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
t
19.9  
13  
ns  
T =25°C, I =-1.6A,  
j F  
di/dt= 100A/µs  
rr  
Q
nC  
rr  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2%.  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
4
ZXM62P03E6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
5
ZXM62P03E6  
TYPICAL CHARACTERISTICS  
600  
500  
400  
300  
200  
100  
0
10  
Vgs=0V  
f=1Mhz  
ID=-1.6A  
9
8
7
6
5
4
3
2
1
0
Ciss  
Coss  
Crss  
VDS=-15V  
VDS=-24V  
0.1  
1
10  
100  
0
1
2
3
4
5
6
7
8
9
10  
DS  
-V - Drain Source Voltage (V)  
Q -Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
6
ZXM62P03E6  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
0.95  
0.037  
1.06  
0.042  
2.2  
0.087  
mm  
inches  
0.65  
0.026  
DIM  
Millimeters  
Inches  
Min.  
0.90  
0.00  
0.90  
0.35  
0.09  
2.80  
2.60  
1.50  
0.10  
Max.  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Min.  
0.35  
Max.  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A
A1  
A2  
b
0
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
C
D
E
E1  
L
e
0.95 REF  
1.90 REF  
0.037 REF  
0.074 REF  
e1  
L
0°  
10°  
0°  
10°  
© Zetex Semiconductors plc 2005  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
7
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