PNP SILICON PLANAR MEDIUM POWER
ZTX758
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
*
*
*
400 Volt VCEO
0.5 Amp continuous current
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-400
-400
-5
V
V
Peak Pulse Current
-1
A
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
TYP.
PARAMETER
SYMBOL MIN.
V(BR)CBO -400
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-320V
VCE=-320V
VEB=-4V
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
-5
V
Collector Cut-Off
Current
-100
-100
-100
nA
nA
nA
Collector Cut-Off
Current
ICES
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
-0.9
V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn On Voltage
-0.9
V
IC=-100mA, VCE=-5V*
Static Forward Current hFE
Transfer Ratio
50
50
40
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
3-267
