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UZDT1147

型号:

UZDT1147

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

65 K

SM-8 DUAL PNP MEDIUM POWER  
ZDT1147  
HIGH GAIN TRANSISTORS  
ISSUE 1 - AUGUST 1997  
B1  
E1  
B2  
E2  
C1  
C1  
C2  
C2  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – ZDT1147  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
-15  
-12  
V
-5  
-20  
V
A
Continuous Collector Current  
Base Current  
IC  
-5  
A
IB  
-500  
mA  
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.0  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
ZDT1147  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
V
V
-15  
-12  
-12  
-12  
-5  
-35  
-25  
-25  
-25  
-8.5  
V
I =-100µA  
(BR)CBO  
CES  
C
Collector-Emitter  
Breakdown Voltage  
V
V
V
V
I =-100µA  
C
Collector-Emitter  
Breakdown Voltage  
I =-10mA  
C
CEO  
Collector-Emitter  
Breakdown Voltage  
I =-100µA, V =+1V  
C
CEV  
EB  
Emitter-Base Breakdown  
Voltage  
I =-100µA  
E
(BR)EBO  
Collector Cutoff Current  
Emitter Cutoff Current  
I
I
I
-0.3  
-0.3  
-0.3  
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
=-12V  
=-4V  
CBO  
EBO  
CES  
CB  
EB  
Collector Emitter Cutoff  
Current  
=-10V  
CES  
Collector-Emitter  
Saturation Voltage  
V
-25  
-70  
-90  
-115  
-50  
mV  
mV  
mV  
mV  
mV  
I =-0.1A, I =-1mA*  
C B  
CE(sat)  
-110  
-130  
-170  
-380  
I =-0.5A, I =-2.5mA*  
C B  
I =-1A, I =-6mA*  
C B  
I =-2A, I =-20mA*  
C B  
-250  
I =-5A, I =-50mA*  
C
B
Base-Emitter  
Saturation Voltage  
V
V
-950  
-905  
-1050  
mV  
I =-5A, I =-50mA*  
C B  
BE(sat)  
BE(on)  
FE  
Base-Emitter Turn-On  
Voltage  
-1000  
mV  
I =-5A, V =-2V*  
C CE  
Static Forward Current  
Transfer Ratio  
h
270  
250  
200  
150  
90  
450  
400  
340  
250  
160  
60  
I =-10mA, V =-2V*  
C CE  
850  
I =-0.5A, V =-2V*  
C CE  
I =-2A, V =-2V*  
C
CE  
I =-5A, V =-2V*  
C
CE  
I =-10A, V =-2V*  
C
CE  
I =-20A, V =-2V*  
C
CE  
Transition Frequency  
Output Capacitance  
Switching Times  
f
115  
MHz  
I =-50mA, V =-10V  
f=50MHz  
T
C
CE  
C
80  
pF  
ns  
ns  
V =-10V, f=1MHz  
CB  
CB  
t
on  
t
off  
150  
220  
I =-4A, I =-40mA, V =-10V  
C B CC  
I =-4A, I =±40mA,  
C
B
V =-10V  
CC  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ZDT1147  
TYPICAL CHARACTERISTICS  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
IC/IB=100  
+25°C  
0.8  
IC/IB=10  
IC/IB=50  
IC/IB=100  
IC/IB=200  
0.6  
-55°C  
+25°C  
+100°C  
0.4  
0.2  
0
1m  
10m  
100m  
1
10  
100  
100  
100  
1m  
1m  
1m  
10m  
100m  
1
10  
100  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
750  
500  
250  
0
1.6  
1.2  
0.8  
0.4  
0
IC/IB=100  
VCE=2V  
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
VCE=2V  
DC  
1s  
100ms  
10ms  
1ms  
1
-55°C  
+25°C  
+100°C  
100us  
100m  
100m  
1
10  
10m  
100m  
1
10  
100  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
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