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IXFK150N30X3

型号：

IXFK150N30X3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

305 K

下载PDF手册
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 150A  
RDS(on) 8.3m  
IXFT150N30X3HV  
IXFH150N30X3  
IXFK150N30X3  
TO-268HV (IXFT)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
TJ = 25C to 150C  
300  
300  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
150  
400  
A
A
TO-264 (IXFK)  
IA  
TC = 25C  
TC = 25C  
75  
2
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
890  
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
D = Drain  
TJM  
Tstg  
-55 ... +150  
G = Gate  
S = Source  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247 & TO-264)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
TO-264  
4
6
10  
g
g
g
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
High Power Density  
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
2.5  
4.5  
100 nA  
Applications  
IDSS  
25 A  
1 mA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
6.6  
8.3 m  
DS100863A(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFT150N30X3HV IXFH150N30X3  
IXFK150N30X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
70  
120  
S
RGi  
1.2  
Ciss  
Coss  
Crss  
13.1  
2.0  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1.7  
Effective Output Capacitance  
Co(er)  
Co(tr)  
700  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
2700  
V
td(on)  
tr  
td(off)  
tf  
40  
32  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
187  
14  
RG = 5(External)  
Qg(on)  
Qgs  
254  
60  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
56  
RthJC  
RthCS  
0.14 C/W  
TO-247  
TO-264  
0.21  
0.15  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
150  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
600  
1.4  
V
trr  
QRM  
IRM  
167  
1100  
13  
ns  
IF = 75A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT150N30X3HV IXFH150N30X3  
IXFK150N30X3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
160  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
9V  
8V  
6V  
5V  
60  
7V  
40  
6V  
5V  
20  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
160  
140  
120  
100  
80  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 150A  
D
I
= 75A  
D
60  
5V  
4V  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
o
T = 125 C  
J
BV  
DSS  
o
T = 25 C  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFT150N30X3HV IXFH150N30X3  
IXFK150N30X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
V
= 10V  
DS  
60  
o
T
J
= 125 C  
o
40  
25 C  
o
40  
- 40 C  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
240  
280  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
280  
240  
200  
160  
120  
80  
500  
400  
300  
200  
100  
0
V
= 10V  
DS  
o
T = - 40 C  
J
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
40  
0
0
40  
80  
120  
160  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 150V  
DS  
C
I
I
= 75A  
D
G
iss  
= 10mA  
C
C
oss  
rss  
10  
= 1 MHz  
f
1
0
40  
80  
120  
160  
200  
240  
1
10  
100  
1,000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXFT150N30X3HV IXFH150N30X3  
IXFK150N30X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
1ms  
1
o
T = 150 C  
J
o
10ms  
T
= 25 C  
C
Single Pulse  
DC  
0.1  
0
1
10  
100  
1,000  
0
50  
100  
150  
200  
250  
300  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_150N30X3 (28-S301) 11-02-17  
IXFT150N30X3HV IXFH150N30X3  
IXFK150N30X3  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-264 Outline  
TO-247 Outline  
D
A
A
0P  
+
B
O 0K M D B M  
E
A2  
A2  
Q
S
D2  
+
+
R
D1  
D
0P1  
4
1
2
3
ixys option  
C
L1  
E1  
L
A1  
b
b2  
c
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
Terminals:  
1
2
3
= Gate  
= Drain  
= Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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