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BZX84C2V4ET1/D

型号：

BZX84C2V4ET1/D

描述：

能源（浪涌）额定齐纳稳压器采用SOT- 23封装\n[ Energy (Surge) Rated Zener Voltage Regulators in SOT-23 Package ]

品牌：

ETC[ ETC ]

页数：

6 页

PDF大小：

75 K

下载PDF手册
BZX84C2V4ET1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
Specification Features:  
3
1
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Peak Power − 225 Watt (8 X 20 ms)  
Cathode  
Anode  
3
1
2
Mechanical Characteristics:  
SOT−23  
CASE 318  
STYLE 8  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL94 V−0  
MARKING DIAGRAM  
xxx  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
xxx = Specific Device Code  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
Watts  
M
= Date Code  
@ T ≤ 25°C  
L
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 25°C  
Derated above 25°C  
225  
1.8  
mW  
mW/°C  
A
ORDERING INFORMATION  
Thermal Resistance − Junction to Ambient  
Total Power Dissipation on Alumina  
R
556  
°C/W  
q
JA  
{
Device  
Package  
Shipping  
3000/Tape & Reel  
P
D
BZX84CxxxET1  
BZX84CxxxET3  
SOT−23  
Substrate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derated above 25°C  
SOT−23 10,000/Tape & Reel  
Thermal Resistance − Junction to Ambient  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
J
−65 to  
+150  
stg  
DEVICE MARKING INFORMATION  
1. Non−repetitive current pulse per Figure 9  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
†The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
August, 2003 − Rev. 0  
BZX84C2V4ET1/D  
BZX84C2V4ET1 Series  
ELECTRICAL CHARACTERISTICS  
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
A
I
F
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)  
F
F
Symbol  
Parameter  
V
Z
Reverse Zener Voltage @ I  
ZT  
I
ZT  
Reverse Current  
V
Z
V
R
V
I
V
F
Z
ZT  
Maximum Zener Impedance @ I  
ZT  
R
ZT  
I
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
Zener Voltage Regulator  
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
V
@ I  
(Volts)  
V
@ I  
(Volts)  
V
(Volts)  
Max Reverse  
Leakage  
Current  
q
VZ  
Z1  
Z2  
Z3  
= 5 mA  
= 1 mA  
@ I = 20 mA  
ZT3  
(mV/k)  
@ I = 5 mA  
ZT1  
ZT1  
ZT2  
Z
Z
Z
ZT3  
(Note 4)  
(Note 4)  
(Note 4)  
ZT1  
ZT2  
(Ohms)  
@ I  
5 mA  
(Ohms)  
@ I  
1 mA  
(Ohms)  
@ I  
20 mA  
C (pF)  
@ V = 0  
R
f = 1 MHz  
I
V
R
Volts  
Device  
Marking  
=
=
=
ZT3  
R
ZT1  
ZT2  
@
Min  
Nom Max  
Min  
Max  
Min  
Max  
mA  
Min  
Max  
Device  
BZX84C3V3ET1  
BZX84C4V7ET1  
BZX84C5V1ET1  
BZX84C5V6ET1  
BZX84C6V2ET1  
Z14  
Z1  
Z2  
Z3  
Z4  
3.1  
4.4  
4.8  
5.2  
5.8  
3.3  
4.7  
5.1  
5.6  
6.2  
3.5  
5
95  
80  
60  
40  
10  
2.3  
3.7  
4.2  
4.8  
5.6  
2.9  
4.7  
5.3  
6
600  
500  
480  
400  
150  
3.6  
4.5  
5
4.2  
5.4  
5.9  
6.3  
6.8  
40  
15  
15  
10  
6
5
3
2
1
3
1
2
2
2
4
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
0
450  
260  
225  
200  
185  
0.2  
1.2  
2.5  
3.7  
5.4  
6
5.2  
5.8  
6.6  
6.6  
BZX84C6V8ET1  
BZX84C7V5ET1  
BZX84C10ET1  
BZX84C12ET1  
BZX84C15ET1  
Z5  
Z6  
Z9  
Y2  
Y4  
6.4  
7
6.8  
7.5  
10  
12  
15  
7.2  
7.9  
15  
15  
20  
25  
30  
6.3  
6.9  
7.2  
7.9  
80  
80  
6.4  
7
7.4  
8
6
2
1
4
5
1.2  
2.5  
4.5  
6.0  
9.2  
4.5  
5.3  
155  
140  
130  
130  
110  
6
9.4  
11.4  
14.3  
10.6  
12.7  
15.8  
9.3  
10.6  
12.7  
15.5  
150  
150  
200  
9.4  
11.4  
13.9  
10.7  
12.9  
15.7  
10  
10  
20  
0.2  
7
8.0  
11.2  
13.7  
0.1  
8
10.0  
13.0  
0.05  
10.5  
BZX84C16ET1  
BZX84C18ET1  
BZX84C24ET1  
Y5  
Y6  
Y9  
15.3  
16.8  
22.8  
16  
18  
24  
17.1  
19.1  
25.6  
40  
45  
70  
15.2  
16.7  
22.7  
17  
19  
200  
225  
250  
15.4  
16.9  
22.9  
17.2  
19.2  
25.7  
20  
20  
25  
0.05  
0.05  
0.05  
11.2  
12.6  
16.8  
10.4  
12.4  
18.4  
14.0  
16.0  
22.0  
105  
100  
80  
25.5  
Max Reverse  
Leakage  
q
VZ  
(mV/k) Below  
V
Below  
V
Below  
V Below  
Z3  
Z1  
Z2  
Z
Z
Z
@ I  
ZT1  
= 2 mA  
@ I  
ZT2  
= 0.1 mA  
@ I  
ZT3  
= 10 mA  
Current  
@ I = 2 mA  
ZT1  
ZT1  
ZT2  
ZT3  
Below  
Below  
Below  
C (pF)  
@ V = 0  
R
f = 1 MHz  
I
V
R
Volts  
Device  
Marking  
@ I  
ZT1  
=
@ I  
ZT4  
=
@ I  
ZT3  
=
R
@
Min  
25.1  
Nom Max  
27 28.9  
Min  
25  
Max  
Min  
25.2  
Max  
mA  
Min  
21.4  
Max  
Device  
2 mA  
0.5 mA  
10 mA  
BZX84C27ET1  
Y10  
80  
28.9  
300  
29.3  
45  
0.05  
18.9  
25.3  
70  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C  
Z
http://onsemi.com  
2
BZX84C2V4ET1 Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
TYPICAL T VALUES  
C
TYPICAL T VALUES  
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
10  
2
1
0
−1  
−ꢀ2  
−ꢀ3  
1
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range −55°C to +150°C)  
(Temperature Range −55°C to +150°C)  
1000  
100  
10  
1000  
100  
10  
T = 25°C  
I = 0.1 I  
Z(AC)  
f = 1 kHz  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
Z(DC)  
I = 1 mA  
Z
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
0.5  
1
1
0.4  
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
http://onsemi.com  
3
BZX84C2V4ET1 Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
100  
10  
0 V BIAS  
1 V BIAS  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+ꢀ25°C  
−ꢀ55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
100  
PEAK VALUE I  
@ 8 ms  
RSM  
t
r
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
P
HALF VALUE I  
/2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
60  
80  
t, TIME (ms)  
Figure 9. 8 × 20 ms Pulse Waveform  
http://onsemi.com  
4
BZX84C2V4ET1 Series  
PACKAGE DIMENSIONS  
SOT−23  
TO−236AB  
CASE 318−09  
ISSUE AH  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
L
4. 318−01, −02, AND −06 OBSOLETE, NEW  
STANDARD 318−09.  
3
B
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
1
2
MIN  
2.80  
1.20  
0.99  
0.36  
1.70  
0.10  
MAX  
3.04  
1.40  
1.26  
0.50  
2.10  
0.25  
0.177  
0.60  
1.02  
2.50  
0.60  
A
B
C
D
G
H
J
0.1102 0.1197  
0.0472 0.0551  
0.0385 0.0498  
0.0140 0.0200  
0.0670 0.0826  
0.0040 0.0098  
V
G
0.0034 0.0070 0.085  
K
L
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
0.45  
0.89  
2.10  
0.45  
C
S
V
J
H
K
D
STYLE 8:  
PIN 1. ANODE  
2. NO CONNECTION  
3. CATHODE  
http://onsemi.com  
5
BZX84C2V4ET1 Series  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make  
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800−282−9855 Toll Free USA/Canada  
BZX84C2V4ET1/D  
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