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IXGP20N120BD1

型号：

IXGP20N120BD1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

580 K

下载PDF手册
High Voltage IGBT with Diode  
VCES  
IC25  
= 1200 V  
= 40 A  
IXGP 20N120B  
IXGP 20N120BD1  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
Preliminary Data Sheet  
D1  
TO-220 (IXGP)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
40  
20  
100  
A
A
A
G = Gate  
C = Collector  
TAB = Collector  
E = Emitter  
SSOA  
V
= 15 V, TJ = 125°C, RG = 10 Ω  
ICM = 40  
A
(RBSOA)  
CGlaE mped inductive load  
@0.8 VCES  
Features  
z
International standard package  
IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
PC  
TC = 25°C  
190  
W
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- Rice cookers  
z
z
MOS Gate turn-on  
- drive simplicity  
Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Md  
Mounting torque  
(M3.5 screw)  
0.55/5 Nm/lb.in.  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
260  
4
°C  
°C  
g
Maximum tab temperature  
soldering SMD devices for 10s  
Advantages  
z
Weight  
Saves space (two devices in one  
package)  
z
Easy to mount with 1 screw  
z
Reduces assembly time and cost  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
VCE = V  
20N120B  
50 µA  
VGE = 0CVES  
20N120BD1  
150 µA  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15 V  
2.9  
2.8  
3.4  
V
V
Note 2  
TJ=125°C  
© 2003 IXYS All rights reserved  
DS99138(12/03)  
IXGP 20N120B  
IXGP 20N120BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 Outline  
gfs  
IC = 20A; VCE = 10 V,  
Note 2.  
12  
18  
S
Cies  
1700  
95  
pF  
pF  
20N120B  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
20N120BD1 105  
39  
pF  
pF  
Qg  
Qge  
Qgc  
72  
12  
27  
nC  
nC  
nC  
IC = 20A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
td(off)  
25  
15  
150  
160  
2.1  
ns  
ns  
280 ns  
320 ns  
3.5 mJ  
Inductive load, TJ = 25°C  
IC = 20 A; VGE = 15 V  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
V
CE = 0.8 VCES; RG = Roff = 10 Ω  
tfi  
Note 1.  
Eoff  
td(on)  
tri  
Eon  
td(off)  
25  
18  
1.4  
270  
360  
3.5  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = 20A; VGE = 15 V  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
Note 1  
tfi  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
VF  
IF  
IF = 10 A, VGE = 0 V  
3.3  
10  
V
A
TC = 90°C  
IRM  
trr  
IF = 10 A; -di /dt = 400 A/µs, VR = 600 V  
VGE = 0 V; TJF= 125°C  
14  
A
120  
ns  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
2.5 K/W  
Notes: 1.  
2.  
Switching times may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased R .  
,
Pulse test, t ≤ 300 µs, duGty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 20N120B  
IXGP 20N120BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
11V  
9V  
7V  
5V  
60  
40  
7V  
5V  
20  
0
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
-50  
4
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
40  
35  
30  
25  
20  
15  
10  
5
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
IC = 40A  
IC = 20A  
IC = 10A  
7V  
5V  
0
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
6.5  
6
TJ = 25ºC  
5.5  
5
IC = 40A  
20A  
4.5  
4
10A  
3.5  
3
TJ = 125ºC  
25ºC  
2.5  
2
-40ºC  
1.5  
5
6
7
8
9
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGP 20N120B  
IXGP 20N120BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
24  
21  
18  
15  
12  
9
16  
14  
12  
10  
8
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 40A  
IC = 20A  
6
6
4
3
2
IC = 10A  
110  
0
0
0
10  
20  
30  
40  
50  
60  
10  
30  
50  
70  
90  
130  
150  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on Ic  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
14  
12  
10  
8
14  
12  
10  
8
RG = 10Ω  
RG = 100Ω - - -  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
RG = 10Ω  
RG = 100Ω - - -  
VGE = 15V  
IC = 40A  
VCE = 960V  
TJ = 125ºC  
6
6
IC = 20A  
IC = 10A  
4
4
TJ = 25ºC  
2
2
0
0
25 35 45 55 65 75 85 95 105 115 125  
10  
15  
20  
25  
30  
35  
40  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on Ic  
1400  
1200  
1000  
800  
550  
500  
450  
400  
350  
300  
250  
200  
td(off)  
tfi  
td(off)  
tfi  
- - - - - -  
- - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
RG = 10Ω  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
IC = 10A  
IC = 40A  
600  
400  
TJ = 25ºC  
IC = 20A  
70  
200  
10  
30  
50  
90  
110  
130  
150  
10  
15  
20  
25  
30  
35  
40  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 20N120B  
IXGP 20N120BD1  
30  
A
1.4  
nC  
1.2  
40  
A
T = 100°C  
VVRJ= 300V  
T = 100°C  
VVRJ= 300V  
25  
30  
IF  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IRM  
TVJ=150°C  
TVJ=100°C  
TVJ= 25°C  
Qr  
20  
15  
10  
5
I = 20A  
IFF= 5A  
IF= 10A  
I = 20A  
IF= 10A  
IFF= 5A  
20  
10  
0
0
V
A/µs  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
100  
1000  
0
200 400 600 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 13. Forward current IF versus VF  
2.0  
Fig. 14. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 15. Peak reverse current IRM  
versus -diF/dt  
120  
20  
1.2  
T = 100°C  
VVRJ= 300V  
ns  
V
µs  
VFR  
VFR  
110  
tfr  
trr  
1.5  
Kf  
15  
10  
5
0.9  
tfr  
I = 20A  
IF= 10A  
IFF= 5A  
100  
90  
1.0  
0.6  
0.3  
0.
IRM  
80  
0.5  
Qr  
T = 100°C  
IFVJ = 10A  
70  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 16. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 17. Recovery time trr versus -diF/dt  
Fig. 18 Peak forward voltage VFR and  
tf versus diF/dt  
10  
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
1.449  
0.5578  
0.4931  
0.0052  
0.0003  
0.0169  
ZthJC  
0.1  
0.01  
DSEP 8-06A/DSEC16-06A  
0.001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 19. Transient thermal resistance junction to case  
NOTE: Fig. 2 to Fig. 6 shows typical values  
© 2003 IXYS All rights reserved  
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