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IXGH50N60B4D1

型号：

IXGH50N60B4D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

200 K

下载PDF手册
VCES = 600V  
IC110 = 50A  
VCE(sat) ≤ 1.8V  
High-Gain IGBTs  
w/Diode  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Low-Vsat PT Trench IGBTs  
TO-247 (IXGH)  
G
C
Tab  
E
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P (IXGQ)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
100  
50  
18  
A
A
A
Tab  
G = Gate  
E = Emitter  
C
=
Collector  
ICM  
TC = 25°C, 1ms  
230  
A
Tab = Collector  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 72  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
PC  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
z
Optimized for Low Conduction and  
Switching Losses  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
Anti-Parallel Ultra Fast Diode  
Square RBSOA  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
6.0  
5.5  
g
g
Advantages  
z Easy to Mount  
z Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
4.0  
6.5  
V
z Power Inverters  
z UPS  
VCE = VCES, VGE = 0V  
50 μA  
2.5 mA  
z Motor Drives  
z SMPS  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z PFC Circuits  
z Battery Chargers  
z Lamp Ballasts  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.4  
1.4  
1.8  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100318C(10/11)  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
20  
30  
S
Cies  
Coes  
Cres  
1860  
105  
60  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg  
110  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
43  
td(on)  
tri  
Eon  
td(off)  
tfi  
37  
68  
ns  
ns  
mJ  
ns  
e
Inductive Load, TJ = 25°C  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
IC = 36A, VGE = 15V  
0.93  
330  
80  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 400V, RG = 10Ω  
ns  
Note 2  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eof  
1.00  
1.80 mJ  
f
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
31  
45  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 36A, VGE = 15V  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eon  
td(off)  
tfi  
0.94  
280  
220  
1.90  
mJ  
ns  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 10Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.25  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-3P Outline  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 15A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
2.6  
A
ns  
ns  
IF = 15A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
100  
25  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
1.6 °C/W  
1 = Gate  
2,4  
=
Collector  
3 = Emitter  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
72  
64  
56  
48  
40  
32  
24  
16  
8
VGE = 15V  
VGE = 15V  
14V  
9V  
8V  
13V  
11V  
10V  
13V  
12V  
11V  
10V  
7V  
6V  
9V  
8V  
7V  
6V  
0
0
0
0
6
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
2.4  
15  
0
5
10  
VCE - Volts  
15  
20  
25  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
72  
64  
56  
48  
40  
32  
24  
16  
8
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
I C = 72A  
I C = 36A  
9V  
8V  
7V  
6V  
5V  
I C = 18A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
120  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
100  
80  
60  
40  
20  
0
125ºC  
I C = 72A  
36A  
18A  
8
7
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE = 300V  
TJ = - 40ºC  
I
I
C = 36A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
600  
1
0
20  
40  
60  
80  
100  
120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
120  
100  
80  
60  
40  
20  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 10  
C
res  
Ω
dv / dt < 10V / ns  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
E
on - - - -  
4.5  
4
4.5  
4
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
4
E
E
E
on - - - -  
3.6  
3.2  
2.8  
2.4  
2
off  
RG = 10  
off  
VGE = 15V  
Ω ,  
CE = 400V  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
3.5  
3
3.5  
3
V
I C = 72A  
2.5  
2
2.5  
2
TJ = 125ºC, 25ºC  
1.6  
1.2  
0.8  
0.4  
0
1.5  
1
1.5  
1
I C = 36A  
0.5  
0
0.5  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
10  
15  
20  
25  
30  
35  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
280  
260  
240  
220  
200  
180  
160  
140  
800  
700  
600  
500  
400  
300  
200  
100  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 10  
Ω ,  
VGE = 15V  
TJ = 125ºC, GE = 15V  
V
VCE = 400V  
CE = 400V  
V
I C = 72A  
I C = 72A  
I C = 36A  
I C = 36A  
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
320  
280  
240  
200  
160  
120  
80  
400  
400  
350  
300  
250  
200  
150  
100  
50  
420  
390  
360  
330  
300  
270  
240  
210  
180  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
370  
340  
310  
280  
250  
220  
190  
RG = 10  
, VGE = 15V  
Ω
RG = 10  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 25ºC  
I C = 36A  
TJ = 125ºC  
I C = 72A  
TJ = 25ºC  
30  
0
40  
15  
20  
25  
35  
40  
45  
50  
55  
60  
65  
70  
75  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
20  
160  
140  
120  
100  
80  
66  
60  
54  
48  
42  
36  
30  
24  
tr i  
td(on)  
- - - -  
tr i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 25ºC  
I C = 72A  
60  
40  
60  
TJ = 125ºC  
20  
40  
I C = 36A  
0
20  
15  
25  
35  
45  
55  
65  
75  
10  
15  
20  
25  
30  
35  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
tr i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
VCE = 400V  
I C = 72A  
60  
40  
I C = 36A  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_50N60B4(L5)03-23-11  
IXGH50N60B4D1  
IXGQ50N60B4D1  
Fig. 22. Reverse Recovery Charge  
vs. - diF/dt  
Fig. 23. Peak Reverse Current  
vs. - diF/dt  
Fig. 21. Forward Voltage vs.  
Forward Current  
40  
35  
30  
25  
20  
15  
10  
5
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
40  
35  
30  
25  
20  
15  
10  
5
T
= 100ºC  
= 300V  
T
= 100ºC  
= 300V  
J
J
V
V
R
R
I F = 30A  
15A  
TJ = 150ºC  
100ºC  
7.5A  
25ºC  
I F = 30A, 15A, 7.5A  
0
0
0
200  
400  
600  
800  
1000  
0
0.5  
1
1.5  
2
2.5  
100  
1000  
1000  
1
VF - Volts  
-diF/dt - A/µs  
-diF/dt - A/µs  
Fig. 25. Reverse Recovery Time  
vs. - diF/dt  
Fig. 26. Peak Forward Voltage & Forward  
Recovery Time vs. diF/dt  
Fig. 24. Dynamic Parameter  
vs. Junction Temperature  
20  
15  
10  
5
2
2
1.8  
1.6  
1.4  
1.2  
1
120  
T
= 100ºC  
= 300V  
T
I
= 100ºC  
= 15A  
F
J
J
V
R
110  
100  
90  
1.5  
VFR  
1
I F = 30A  
I RM  
0.8  
0.6  
0.4  
0.2  
0
0.5  
Q
r
15A  
80  
t
f r  
7.5A  
0
0
1000  
70  
0
200  
400  
600  
800  
0
200  
400  
600  
800  
20  
40  
60  
80  
100  
120  
140  
160  
diF/dt - A/µs  
TJ - Degrees Centigrade  
-diF/dt - A/µs  
Fig. 27. Maximum Transient Thermal Impedance (for Diode)  
10  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Second  
© 2011 IXYS CORPORATION, All Rights Reserved  
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