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IXGH40N60A3D1

型号：

IXGH40N60A3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

173 K

下载PDF手册
Advance Technical Information  
PolarTM IGBT  
with Low VCE(sat)  
IXGH40N60A3D1  
IXGT40N60A3D1  
VCES  
IC25  
= 600 V  
= 75 A  
VCE(sat) < 1.25 V  
PreliminaryDataSheet  
TO-268  
Symbol  
Test Conditions  
Maximum Ratings  
(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
G
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
40  
A
A
A
TO-247 AD  
(IXGH)  
TC = 25°C, 1 ms  
200  
TAB)  
SSOA  
(RBSOA)  
PC  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
TC = 25°C  
ICM = 80  
A
G
C
E
300  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Medium frequency IGBT  
Square RBSOA  
High current handling capability  
MOS Gate turn-on  
z
z
z
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
6
4
g
g
- drive simplicity  
TO-268 SMD  
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
50  
µA  
TJ = 150°C  
1
100  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
IC = 30 A, VGE = 15 V  
VCE(sat)  
TJ = 25°C  
1.05 1.25  
© 2005 IXYS All rights reserved  
DS99356(03/05)  
IXGH 40N60A3D1  
IXGT 40N60A3D1  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 30 A; VCE = 10 V,  
20  
30  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
2030  
180  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 30 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
111  
17  
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
61  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
21  
28  
ns  
ns  
ns  
ns  
mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 30 A, VGE = 15 V  
VCE = 400 V, RG =5.0 Ω  
400  
360  
2.6  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
22  
26  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = 30 A, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.4  
630  
550  
4.7  
mJ  
ns  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VCE = 400 V, RG = 5.0 Ω  
ns  
Eoff  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 30 A, VGE = 0 V, Pulse test  
TJ =150°C  
1.6  
2.5  
V
V
t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C  
4
A
ns  
ns  
VR = 100 V  
TJ = 100°C 100  
25  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
RthJC  
0.9 K/W  
Min. Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGH 40N60A3D1  
IXGT 40N60A3D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
GE  
= 15V  
13V  
V
=15V  
13V  
GE  
11V  
11V  
9V  
7V  
9V  
7V  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
0
1
2
3
4
5
6
7
8
9
10  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 15V  
13V  
V
= 15V  
GE  
GE  
I
= 80A  
C
11V  
9V  
I
I
= 40A  
= 20A  
C
C
7V  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
4
3.5  
3
250  
225  
200  
175  
150  
125  
100  
75  
= 25ºC  
T
J
2.5  
2
I
= 80A  
40A  
C
T = 125ºC  
J
20A  
25ºC  
50  
-40ºC  
1.5  
1
25  
0
5
6
7
8
9
10  
11  
12  
13  
14  
7
8
9
10  
11  
12  
13  
14  
15  
VG E - Volts  
VG E - Volts  
IXGH 40N60A3D1  
IXGT 40N60A3D1  
Fig. 8. Dependence of Turn-off  
Fig. 7. Transconductance  
Energy Loss on RG  
12  
11  
10  
9
60  
50  
40  
30  
20  
10  
0
I
= 60A  
C
T = 125ºC  
J
V
GE  
= 15V  
8
T = -40 C  
º
J
V
CE  
= 480V  
7
25 C  
º
6
I
= 30A  
C
º
125 C  
5
4
3
I
= 15A  
100  
C
2
1
0
25 50 75 100 125 150 175 200 225 250  
0
20  
40  
R
60  
- Ohms  
80  
120  
I C - Amperes  
G
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
11  
10  
9
11  
10  
9
R
= 5Ω  
G
R
V
= 5Ω  
G
V
V
= 15V  
GE  
CE  
T = 125ºC  
J
= 15V  
GE  
CE  
= 480V  
I
= 60A  
C
8
V
= 480V  
8
7
7
6
6
I
= 30A  
5
C
5
4
4
3
T = 25ºC  
J
3
2
1
I
= 15A  
C
2
0
1
25 35 45 55 65 75 85 95 105 115 125  
15  
20  
25  
30  
35 40  
45  
50  
55  
60  
T - Degrees Centigrade  
J
I C - Amperes  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
td(off)  
tfi  
td(off)  
tfi  
- - - - -  
I
= 15A  
30A  
C
- - - - - -  
T = 125ºC  
R
= 5Ω, V  
= 15V  
G
GE  
60A  
J
V
= 480V  
CE  
V
= 15V  
GE  
CE  
V
= 480V  
T = 125ºC  
J
I
= 60A  
C
I
= 30A  
15A  
C
T = 25ºC  
J
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IXsion
R G - Ohms  
I C - Amperes  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGH 40N60A3D1  
IXGT 40N60A3D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
16  
14  
12  
10  
8
td(off)  
V
=300V  
CE  
tfi  
R
V
V
- - - - -  
I
I
= 40A  
C
G
I
= 15A  
30A  
C
= 5Ω  
G
= 10mA  
60A  
= 15V  
GE  
CE  
= 480V  
6
I
= 60A  
30A  
4
C
2
15A  
0
0
20  
40  
60  
80  
100  
120  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
160  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
C
oes  
60  
T = 125ºC  
J
C
res  
40  
R
= 10Ω  
G
20  
dV/dT < 10V/ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
IXGH 40N60A3D1  
IXGT 40N60A3D1  
60  
A
1000  
30  
A
TVJ= 100°C  
TVJ= 100°C  
VR = 300V  
nC VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
600  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
400  
200  
0
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 17. Forward current IF versus VF  
2.0  
Fig. 18. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 19. Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
µs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 20. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 21. Recovery time trr versus -diF/dt  
Fig. 22. Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 23. Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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