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IXFR24N100Q3

型号：

IXFR24N100Q3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
Advance Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 1000V  
ID25 = 18A  
IXFR24N100Q3  
RDS(on) ≤ 490mΩ  
trr  
≤ 300ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
Isolated Tab  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
18  
60  
A
A
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
24  
2
A
J
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
500  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
Low Intrinsic Gate Resistance  
2500V~ Electrical Isolation  
Fast Intrinsic Rectifier  
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
z
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V∼  
Avalanche Rated  
FC  
20..120/4.5..27  
5
N/lb.  
g
Low Package Inductance  
Weight  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
1000  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
6.5  
z
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
25 μA  
1.5 mA  
z
TJ = 125°C  
z
RDS(on)  
VGS = 10V, ID = 12A, Note 1  
490 mΩ  
DS100394(10/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFR24N100Q3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 12A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
14  
24  
S
Ciss  
Coss  
Crss  
7200  
590  
50  
pF  
pF  
pF  
RGi  
0.18  
38  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A  
RG = 1Ω (External)  
tr  
24  
45  
ns  
ns  
td(off)  
1 = Gate  
tf  
14  
ns  
2,4 = Drain  
3 = Source  
Qg(on)  
Qgs  
140  
47  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A  
Qgd  
60  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
24  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
1.4  
trr  
QRM  
IRM  
300 ns  
IF = 12A, -di/dt = 100A/μs  
1.9  
12.4  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFR24N100Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
VGS = 10V  
VGS = 10V  
50  
40  
30  
20  
10  
0
8V  
8V  
7V  
6V  
4
7V  
6V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
22  
55  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
7V  
I D = 24A  
I D = 12A  
6V  
5V  
4
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
6
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFR24N100Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
125ºC  
- 40ºC  
0
4
0.3  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I D = 12A  
I G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
50  
100  
150  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
25µs  
100µs  
C
iss  
oss  
rss  
C
1ms  
C
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
10  
0.1  
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFR24N100Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_24N100Q3(R8) 10-12-11  
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