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3SK273S

型号:

3SK273S

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

163 K

High Frequency FETs  
3SK273  
GaAs N-Channel MES FET  
For VHF-UHF amplification  
unit: mm  
2.8+00..32  
1.5+00..32  
Features  
0.6±0.15  
0.65±0.15  
Low noise-figure (NF)  
Large power gain PG  
0.5R  
Mini-type package, allowing downsizing of the sets and autoatic  
insertion through the tape/magazine packing.  
3
1
2
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate 1 to Source voltage  
Gate 2 to Source voltage  
Drain current  
Symbol  
VDS  
VG1S  
VG2S  
Ratin
Unit  
V
6  
V
0.4±
6  
V
1: Source  
2: Drain  
3: Gate2  
4: Gate1  
50  
m
mA  
mA  
mW  
°C  
Gate 1 current  
IG1  
1
Gate 2 current  
IG2  
200  
Mini Type Package (4-pin)  
Allowable power issipaon  
Channel temperare  
Storage tempeture  
PD  
Marking Symbl (Example): ET  
Tch  
150  
Tst
5 to +150  
°C  
ElectCharactertics (T= 25°C)  
arameter  
Drain to Source cut-of curnt  
te 2 to Drain cuent  
Gate rent  
Gatnt  
Drain cnt  
Symol  
Conditions  
min  
typ  
max  
35  
Unit  
mA  
µA  
µA  
µA  
µA  
V
*
IDSS  
VDS = 5V, VS = 0, VG2S = 0  
VDD = 13V (G1, S = Open)  
VD= VG2S = 0, VG1S = 6V  
VDS = VG1S = 0, VG2S = 6V  
VDS = 13V, VG1S = 3.5, VG2S = 0  
VDS = 5V, VG2S = 0, ID = 200µA  
VDS = 5V, VG1S = 0, ID = 200µA  
VDS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz  
8.5  
IG2DO  
IG1SS  
IG2SS  
IDSX  
50  
20  
20  
50  
Gate 1 to Soce cut-off voltage VG1SC  
Gate 2 to Source cut-off voltage VG2SC  
3.5  
3.5  
V
Forward transfer admittance  
| Yfs |  
15  
20  
0.4  
0.3  
0.02  
16  
mS  
pF  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse trnsfer capacitance (Common Source) Crss  
2
VDS = 5V, VG1S = VG2S = 6V  
1.2  
pF  
f = 1MHz  
0.04  
pF  
Power gain  
PG  
NF  
GR  
VDS = 5V, ID = 10mA  
13  
37  
dB  
dB  
dB  
Noise figure  
Gain reduction  
VG2S = 1.5V, f = 800MHz  
VDS = 5V, VAGC = 1.5V/3.5V, f = 800MHz  
1.8  
45  
2.8  
* IDSS rank classification  
Rank  
P
Q
R
R
IDSS (mA)  
8.5 to 17  
ETP  
15 to 21  
ETQ  
19 to 30  
ETR  
25 to 35  
ETS  
Marking Symbol  
1
High Frequency FETs  
3SK273  
PD  
Ta  
ID VDS  
ID  
VG1S  
400  
350  
300  
250  
200  
150  
100  
50  
30  
25  
20  
15  
10  
5
42  
35  
28  
21  
14  
7
VG2S=0  
Ta=25˚C  
VDS=5V  
Ta=25˚C  
VG2S=1.5V  
VG1S=0V  
– 0.2V  
– 0.4V  
– 0.6V  
0V  
– 0.4V  
– 0.8V  
– 0.8V  
–1.2V  
–1.0V  
–1.2V  
0
0
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
–2.0 –1.6 –1.2 – 0.8 – 0.4  
0
0.4  
(
)
( )  
V
( )  
Gate 1 to source voltage VG1S V  
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
| Yfs | VG1S  
PG  
VG1S  
NF  
VG1S  
60  
50  
40  
30  
20  
10  
0
24  
20  
16  
12  
8
5.2  
4.4  
3.6  
2.8  
2.0  
1.2  
0.4  
VDS=5V  
f=1kHz  
Ta=25˚C  
V
DS=5V  
VDS=5V  
f=800MHz  
Ta=25˚C  
VG2S=0V  
f=800MHz  
Ta=25˚C  
0.5V  
VG2S=1.5V  
1.0V  
1.0V  
1.5V  
0.5V  
VGS=1.5V  
1.0V  
0V  
0.5V  
0V  
4
0
–2.8 –2.1 –1.4 – 0.7  
0
0.7  
1.4  
–1.6 –1.2 – 0.8 – 0.4  
0
0.4  
0.8  
–1.6 –1.2 – 0.8 – 0.4  
0
0.4  
0.8  
( )  
V
(
V
)
( )  
Gate 1 to source voltage VG1S V  
Gate 1 to source voltage VG1S  
Gate 1 to source voltage VG1S  
PG  
VG2S  
60  
40  
VDS=5V  
f=800MHz  
Ta=25˚C  
20  
0
–20  
–40  
–60  
–6  
–4  
–2  
0
2
4
6
( )  
V
Gate 2 to source voltage VG2S  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
厂商 型号 描述 页数 下载

ETC

3SK101 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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