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UZVN3306A

型号:

UZVN3306A

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

46 K

N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVN3306A  
ISSUE 2 – MARCH 94  
FEATURES  
*
*
60 Volt VDS  
RDSon)=5  
D
G
S
E-Line  
TO92 Com patible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS  
VALUE  
UNIT  
V
Dra in -S o u rce Vo ltag e  
60  
270  
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C  
Pu ls e d Dra in Cu rre n t  
ID  
m A  
A
IDM  
3
Ga te-S o u rce Vo lta g e  
VGS  
V
± 20  
Po w e r Dis s ip a tio n a t Ta m b=25°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Pto t  
625  
m W  
°C  
Tj:Ts tg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. MAX. UNIT CONDITIONS .  
Dra in -S o u rce Bre akd o w n  
Vo lta g e  
BVDS S  
60  
V
ID=1m A, VGS=0V  
Ga te-S o u rce Th res h o ld  
Vo lta g e  
VGS (th )  
0.8  
2.4  
20  
V
ID=1m A, VDS= VGS  
Ga te-Bo d y Lea ka g e  
IGS S  
IDS S  
n A  
VGS=± 20V, VDS=0V  
Ze ro Ga te Vo lta g e Dra in  
Cu rre n t  
0.5  
50  
VDS=60V, VGS=0  
µA  
µA  
VDS=48V, VGS=0V, T=125°C(2)  
On -S ta te Dra in Cu rre n t(1)  
ID(o n )  
750  
150  
m A  
VDS=18V, VGS=10V  
VGS=10V,ID=500m A  
S ta tic Drain -S o u rce On -S ta te  
Res is ta n ce (1)  
RDS (o n )  
5
Fo rw a rd Tra n s co n d u ctan ce(1)(2g fs  
)
m S  
VDS=18V,ID=500m A  
In p u t Ca p a citan ce (2)  
Cis s  
Co s s  
35  
25  
p F  
p F  
Co m m o n S o u rce Ou tp u t  
Cap acita n ce (2)  
VDS=18V, VGS=0V, f=1MHz  
Reve rs e Tra n s fe r Ca p acita n ce Crs s  
(2)  
8
p F  
Tu rn -On De lay Tim e (2)(3)  
Ris e Tim e (2)(3)  
td (o n )  
5
7
6
8
n s  
n s  
n s  
n s  
tr  
VDD 18V, ID=500m A  
Tu rn -Off De la y Tim e (2)(3)  
Fa ll Tim e (2)(3)  
td (o ff)  
tf  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
3-375  
(
2) Sam ple test.  
ZVN3306A  
TYPICAL CHARACTERISTICS  
9V  
VGS=10V  
1.0  
10  
8
8V  
7V  
0.8  
0.6  
0.4  
0.2  
6
6V  
5V  
ID=  
1A  
4
4V  
3V  
2
0.5A  
0.25A  
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
VDS - Drain Source Voltage (Volts)  
VGS -Gate Source Voltage (Volts)  
Saturation Characteristics  
Voltage Saturation Characteristics  
1.0  
10  
VDS=10V  
0.8  
0.6  
0.4  
0.2  
5
ID=  
1A  
0.5A  
0.25A  
1
0
1
10  
20  
0
2
4
6
8
10  
VGS-Gate Source Voltage (Volts)  
VGS-Gate Source Voltage (Volts)  
Transfer Characteristics  
On-resistance vs gate-source voltage  
2.4  
200  
180  
160  
140  
ID=-0.5A  
2.2  
2.0  
1.8  
1.6  
R
e
c
n
ta  
s
i
s
e
e R  
120  
100  
80  
VDS=18V  
rc  
u
o
1.4  
1.2  
1.0  
0.8  
0.6  
-S  
n
ai  
Dr  
60  
40  
20  
0
0.4  
-80 -60 -40 -20  
0 20 40 60 80 100 120 140 160  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
ID(on) - Drain Current (Amps)  
T-Temperature (C°)  
Transconductance v drain current  
Normalised RDS(on) and VGS(th) vs Temperature  
3-376  
ZVN3306A  
TYPICAL CHARACTERISTICS  
200  
50  
40  
180  
160  
140  
120  
100  
30  
VDS=18V  
Ciss  
20  
80  
60  
40  
10  
0
Coss  
Crss  
20  
0
0
0
1
2
3
4
5
6
7
8
9
10  
10  
20  
40  
50  
30  
VGS-Gate Source Voltage (Volts)  
VDS-Drain Source Voltage (Volts)  
Transconductance v gate-source voltage  
Capacitance v drain-source voltage  
VDD=20V  
50V  
30V  
16  
14  
ID=800m A  
12  
10  
8
6
4
2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
Q-Charge (nC)  
Gate charge v gate-source voltage  
3-377  
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