请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFQ26N50Q

型号：

IXFQ26N50Q

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

626 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
IXFH 26N50Q  
IXFQ 26N50Q  
IXFT 26N50Q  
VDSS  
ID25  
RDS(on)  
trr  
= 500 V  
= 26 A  
= 0.20 Ω  
≤ 250 ns  
Q-Class  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
(TAB)  
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
TO-3P(IXFQ)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
26  
104  
26  
A
A
A
EAR  
TC = 25°C  
TC = 25°C  
30  
1.5  
5
mJ  
J
EAS  
G
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
V/ns  
C
E
(TAB)  
TO-268 (D3) (IXFT) Case Style  
PD  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TJM  
Tstg  
G
S
(TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
G = Gate,  
D = Drain,  
TAB = Drain  
S = Source,  
Weight  
TO-247, TO-3P  
TO-268  
6
4
g
g
Features  
Symbol  
TestConditions  
Characteristic Values  
z IXYS advanced low Qg process  
z Internationalstandardpackages  
z Low RDS (on)  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
V
z UnclampedInductiveSwitching(UIS)  
rated  
VGS(th)  
VDS = VGS, ID = 4 mA  
2.5  
4.5  
V
z Fast switching  
z Molding epoxies meet UL 94 V-0  
flammability classification  
IGSS  
VGS = 20 VDC, VDS = 0  
100  
nA  
IDSS  
VDS = V  
T = 25°C  
TJJ = 125°C  
25  
1
µA  
mA  
VGS = 0DVSS  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.20  
Ω
NGoSte 2  
z
Easy to mount  
Space savings  
High power density  
z
z
© 2003 IXYS All rights reserved  
DS99128(12/03)  
IXFH 26N50Q IXFQ 26N50Q  
IXFT 26N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 Outline  
VDS = 10 V; ID = 0.5 • ID25, Note 2  
14  
24  
S
Ciss  
Coss  
Crss  
3900  
500  
pF  
pF  
pF  
1
2
3
Terminals:  
1 - Gate  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
2 - Drain  
3 - Source  
Tab - Drain  
130  
td(on)  
tr  
td(off)  
tf  
28  
30  
55  
16  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2 Ω (External),  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
Qg(on)  
Qgs  
95  
27  
40  
nC  
nC  
nC  
A
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b
Qgd  
b12  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
RthJC  
RthCK  
0.42  
K/W  
K/W  
20.80 21.46  
15.75 16.26  
TO-247, TO-3P  
0.25  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
L
.780 .800  
.177  
L1  
∅P 3.55  
3.65  
.140 .144  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Q
5.89  
4.32  
6.40 0.232 0.252  
R
S
5.49  
.170 .216  
242 BSC  
Symbol  
IS  
TestConditions  
6.15 BSC  
VGS = 0 V  
26  
104  
1.3  
A
TO-268 Outline  
ISM  
Repetitive; Note1  
A
V
VSD  
IF = I , VGS = 0 V,  
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
250  
ns  
µC  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
0.85  
8
TO-3P Outline  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
2.1  
.75  
.83  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXFH 26N50Q IXFQ 26N50Q  
IXFT 26N50Q  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
VGS=10V  
TJ = 25OC  
VGS=10V  
TJ = 125OC  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
5V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDS - Volts  
VDS - Volts  
Fig.1 Output Characteristics @ Tj = 25°C  
Fig.2 Output Characteristics @ Tj = 125°C  
2.4  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
VGS = 10V  
2.0  
ID = 26A  
o
TJ = 125 C  
1.6  
ID = 13A  
o
TJ = 25 C  
1.2  
0.8  
25  
50  
75  
100  
125  
150  
0
10  
20  
ID - Amperes  
Fig.3 RDS(on) vs. Drain Current  
30  
40  
50  
60  
TJ - Degrees C  
Fig.4 Temperature Dependence of Drain  
to Source Resistance  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
TJ = 125oC  
TJ = 25oC  
0
-50 -25  
0
25 50 75 100 125 150  
0
2
4
6
8
TC - Degrees C  
V
GS
- Volts  
Fig.5 Drain Current vs. Case Temperature  
Fig.6 Drain Current vs Gate Source Voltage  
© 2003 IXYS All rights reserved  
IXFH 26N50Q IXFQ 26N50Q  
IXFT 26N50Q  
10000  
1000  
100  
12  
10  
8
f = 1MHz  
VDS = 250 V  
ID = 13 A  
IG = 10 mA  
Ciss  
Coss  
6
4
Crss  
2
0
0
5
10 15 20 25 30 35 40  
0
20  
40  
60  
80  
100  
120  
VDS - Volts  
Gate Charge - nC  
Fig.7GateChargeCharacteristicCurve  
Fig.8 CapacitanceCurves  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125OC  
TJ = 25OC  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Fig.9DrainCurrentvsDraintoSourceVoltage  
1.00  
D=0.5  
0.10  
0.01  
0.00  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
Pulse Width - Seconds  
10-1  
100  
101  
Fig.10TransientThermalImpedance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.159393s