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4N38.300W

型号：

4N38.300W

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

7 页

PDF大小：

107 K

下载PDF手册
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1  
H11D2  
H11D3  
H11D4  
4N38  
DESCRIPTION  
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting  
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage  
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.  
FEATURES  
• High Voltage  
- H11D1, H11D2, BVCER = 300 V  
- H11D3, H11D4, BVCER = 200 V  
• High isolation voltage  
- 5300 VAC RMS - 1 minute  
- 7500 VAC PEAK - 1 minute  
• Underwriters Laboratory (UL) recognized File# E90700  
ANODE  
CATHODE  
N/C  
1
6
BASE  
2
3
5
4
COLLECTOR  
EMITTER  
APPLICATIONS  
• Power supply regulators  
• Digital logic inputs  
• Microprocessor inputs  
• Appliance sensor systems  
• Industrial controls  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Units  
TOTAL DEVICE  
TSTG  
-55 to +150  
°C  
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
TOPR  
TSOL  
-55 to +100  
260 for 10 sec  
260  
°C  
°C  
mW  
PD  
IF  
3.5  
mW/°C  
EMITTER  
80  
mA  
*Forward DC Current  
*Reverse Input Voltage  
*Forward Current - Peak (1µs pulse, 300pps)  
*LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
VR  
6.0  
3.0  
V
A
IF(pk)  
150  
1.41  
mW  
mW/°C  
PD  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
ABSOLUTE MAXIMUM RATINGS (Cont.)  
Parameter  
Symbol  
Value  
Units  
mW  
DETECTOR  
300  
*Power Dissipation @ TA = 25°C  
Derate linearly above 25°C  
PD  
4.0  
300  
200  
80  
mW/°C  
H11D1 - H11D2  
H11D3 - H11D4  
4N38  
*Collector to Emitter Voltage  
*Collector Base Voltage  
VCER  
H11D1 - H11D2  
H11D3 - H11D4  
4N38  
300  
200  
80  
V
VCBO  
H11D1 - H11D2  
H11D3 - H11D4  
*Emitter to Collector Voltage  
Collector Current (Continuous)  
VECO  
7
100  
mA  
ELECTRICAL CHARACTERISTICS (T = 25 Unless otherwise specified.)  
°C  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Characteristic  
EMITTER  
Test Conditions Symbol  
Device  
Min  
Typ**  
Max  
Unit  
(IF = 10 mA)  
VF  
ALL  
1.15  
1.5  
V
*Forward Voltage  
Forward Voltage Temp.  
Coefficient  
!VF  
!TA  
BVR  
ALL  
-1.8  
mV/°C  
Reverse Breakdown Voltage  
(IR = 10 µA)  
(VF = 0 V, f = 1 MHz)  
(VF = 1 V, f = 1 MHz)  
(VR = 6 V)  
ALL  
ALL  
6
25  
50  
V
pF  
pF  
µA  
Junction Capacitance  
CJ  
IR  
ALL  
65  
*Reverse Leakage Current  
DETECTOR  
ALL  
0.05  
10  
(RBE = 1 M")  
H11D1/2  
H11D3/4  
4N38  
300  
200  
80  
BVCER  
BVCEO  
*Breakdown Voltage  
Collector to Emitter  
(IC = 1.0 mA, IF = 0)  
(No RBE) (IC = 1.0 mA)  
H11D1/2  
H11D3/4  
4N38  
300  
200  
80  
V
*Collector to Base  
(IC = 100 µA, IF = 0)  
BVCBO  
Emitter to Base  
BVEBO  
BVECO  
4N38  
7
(IE = 100 µA , IF = 0)  
Emitter to Collector  
ALL  
7
10  
(VCE = 200 V, IF = 0, TA = 25°C)  
(VCE = 200 V, IF = 0, TA = 100°C)  
(VCE = 100 V, IF = 0, TA = 25°C)  
(VCE = 100 V, IF = 0, TA = 100°C)  
100  
250  
100  
250  
50  
nA  
µA  
nA  
µA  
nA  
H11D1/2  
*Leakage Current  
Collector to Emitter  
(RBE = 1 M")  
ICER  
H11D3/4  
4N38  
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)  
ICEO  
Notes  
* Parameters meet or exceed JEDEC registered data (for 4N38 only)  
** All typical values at TA = 25°C  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
TRANSFER CHARACTERISTICS  
DC Characteristic  
Test Conditions Symbol  
Device  
H11D1  
H11D2  
H11D3  
H11D4  
4N38  
Min  
Typ**  
Max  
Unit  
EMITTER  
(IF = 10 mA, VCE = 10 V)  
2 (20)  
Current Transfer Ratio  
Collector to Emitter  
(RBE = 1 M")  
CTR  
mA (%)  
1 (10)  
2 (20)  
(IF = 10 mA, VCE = 10 V)  
(IF = 10 mA, IC = 0.5 mA)  
H11D1/2/3/4  
4N38  
0.1  
0.40  
1.0  
*Saturation Voltage  
(RBE = 1 M") VCE (SAT)  
(IF = 20 mA, IC = 4 mA)  
V
TRANSFER CHARACTERISTICS  
Characteristic  
Test Conditions Symbol Device  
Min  
Typ**  
Max  
Unit  
SWITCHING TIMES  
(VCE =10 V, ICE = 2 mA)  
(RL = 100 ")  
ton  
toff  
ALL  
ALL  
5
5
Non-Saturated Turn-on Time  
Turn-off Time  
µs  
ISOLATION CHARACTERISTICS  
Characteristic  
Test Conditions Symbol Device  
Min  
5300  
7500  
1011  
Typ**  
Max  
Unit  
(VACRMS)  
(VACPEAK)  
"
Isolation Voltage  
(II-O #$1 µA, 1 min.)  
VISO  
ALL  
Isolation Resistance  
Isolation Capacitance  
(VI-O = 500 VDC)  
(f = 1 MHz)  
RISO  
CISO  
ALL  
ALL  
0.5  
pF  
Notes  
* Parameters meet or exceed JEDEC registered data (for 4N38 only)  
** All typical values at TA = 25°C  
Fig.1 LED Forward Voltage vs. Forward Current  
Fig.2 Normalized Output Characteristics  
1.8  
Normalized to:  
V
= 10 V  
= 10 mA  
6
= 10 Ω  
BE  
CE  
1.7  
I
F
10  
R
T
= 25˚C  
1.6  
A
I
I
= 50 mA  
= 10 mA  
F
F
1.5  
1
1.4  
T
T
= 55˚C  
= 25˚C  
A
A
I
= 5 mA  
F
1.3  
1.2  
1.1  
1.0  
0.1  
0.01  
T
= 100˚C  
A
0.1  
1
10  
100  
1
10  
100  
I
- LED FORWARDCURRENT (mA)  
V
- COLLECTOR VOLTAGE (V)  
CE  
F
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
Fig.3 Normalized Output Current vs. LED Input Current  
Fig.4 Normalized Output Current vs.Temperature  
10  
Normalized to:  
Normalized to:  
= 10 V  
V
CE  
= 10 V  
V
CE  
I
R
= 10 mA  
6
= 10 Ω  
F
I
R
= 10 mA  
6
= 10 Ω  
F
BE  
BE  
I
I
= 20 mA  
= 10 mA  
F
F
T
= 25˚C  
A
T
= 25˚C  
A
1
1
I
= 5 mA  
F
0.1  
0.01  
0.1  
-60  
1
10  
-40  
-20  
0
20  
40  
60  
80  
100  
I
- LED INPUT CURRENT (mA)  
T - AMBIENT TEMPERATURE (˚C)  
A
F
Fig.5 Normalized Dark Current vs. Ambient Temperature  
Normalized Collector-Base Current vs.Temperature  
10  
9
8
7
6
5
4
3
2
1
0
Normalized to:  
Normalized to:  
V
= 100 V  
V
I
R
= 10 V  
10000  
1000  
100  
10  
CE  
CE  
6
R
T
= 10  
Ω
= 10 mA  
BE  
F
6
= 25˚C  
= 10  
Ω
A
I
= 50 mA  
BE  
F
T
= 25˚C  
A
V
CE  
= 300 V  
V
CE  
= 100 V  
V
CE  
= 50 V  
I
I
= 10 mA  
F
F
1
= 5 mA  
-40  
0.1  
10  
20  
30  
T
40  
50  
60  
70  
80  
90  
100  
110  
-60  
-20  
T
0
20  
40  
60  
80  
100  
- AMBIENT TEMPERATURE (˚C)  
- AMBIENT TEMPERATURE (˚C)  
A
A
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
Package Dimensions (Through Hole)  
Package Dimensions (Surface Mount)  
0.350 (8.89)  
0.330 (8.38)  
3
2
1
PIN 1  
ID.  
PIN 1  
ID.  
3
2
1
0.270 (6.86)  
0.240 (6.10)  
0.270 (6.86)  
0.240 (6.10)  
4
5
6
0.350 (8.89)  
0.330 (8.38)  
4
5
6
0.070 (1.78)  
0.045 (1.14)  
0.300 (7.62)  
TYP  
0.070 (1.78)  
0.045 (1.14)  
0.200 (5.08)  
0.135 (3.43)  
0.200 (5.08)  
0.165 (4.18)  
0.016 (0.41)  
0.008 (0.20)  
0.020 (0.51)  
MIN  
0.154 (3.90)  
0.100 (2.54)  
0.020 (0.51)  
MIN  
0.016 (0.40) MIN  
0.016 (0.40)  
0.008 (0.20)  
0.022 (0.56)  
0.016 (0.41)  
0.100 (2.54)  
TYP  
0.315 (8.00)  
MIN  
0.300 (7.62)  
TYP  
0.022 (0.56)  
0.016 (0.41)  
0° to 15°  
0.405 (10.30)  
MAX  
0.100 (2.54)  
TYP  
Lead Coplanarity : 0.004 (0.10) MAX  
Package Dimensions (0.4”Lead Spacing)  
Recommended Pad Layout for  
Surface Mount Leadform  
3
2
1
PIN 1  
ID.  
0.270 (6.86)  
0.240 (6.10)  
0.070 (1.78)  
0.060 (1.52)  
4
5
6
0.350 (8.89)  
0.330 (8.38)  
0.415 (10.54)  
0.100 (2.54)  
0.070 (1.78)  
0.045 (1.14)  
0.295 (7.49)  
0.030 (0.76)  
0.004 (0.10)  
MIN  
0.200 (5.08)  
0.135 (3.43)  
0.154 (3.90)  
0.100 (2.54)  
0.016 (0.40)  
0.008 (0.20)  
0° to 15°  
0.022 (0.56)  
0.016 (0.41)  
0.400 (10.16)  
TYP  
0.100 (2.54) TYP  
NOTE  
All dimensions are in inches (millimeters)  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1, H11D2, H11D3, H11D4, 4N38  
ORDERING INFORMATION  
Order Entry Identifier  
Option  
Description  
S
.S  
Surface Mount Lead Bend  
Surface Mount; Tape and reel  
0.4” Lead Spacing  
SD  
W
.SD  
.W  
300  
300W  
3S  
.300  
.300W  
.3S  
VDE 0884  
VDE 0884, 0.4” Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape & Reel  
3SD  
.3SD  
QT Carrier Tape Specifications (“D” Taping Orientation)  
12.0 ± 0.1  
4.0 ± 0.1  
4.85 ± 0.20  
Ø1.55 ± 0.05  
0.30 ± 0.05  
4.0 ± 0.1  
1.75 ± 0.10  
7.5 ± 0.1  
16.0 ± 0.3  
13.2 ± 0.2  
9.55 ± 0.20  
Ø1.6 ± 0.1  
10.30 ± 0.20  
User Direction of Feed  
0.1 MAX  
NOTE  
All dimensions are in millimeters  
8/9/00  
200046A  
HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
© 2000 Fairchild Semiconductor Corporation  
8/9/00  
200046A  
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