UPS140e3
1.0 A Schottky Barrier Rectifier
KEY FEATURES
DESCRIPTION
The Microsemi UPS140e3 Powermite® Schottky rectifier is RoHS
compliant and offers optimized forward voltage characteristics with reverse
blocking capabilities up to 40 Volt. They are ideal for surface mount
applications that operate at high frequencies.
Low thermal resistance DO-216 package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, JANTXV,
and JANS are available by adding MQ, MX,
MV, or MSP prefixes respectively to part
numbers. For example, designate
MXUPS140e3 for a JANTX (consult factory
for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
In addition to its size advantages, Powermite® package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly, and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
APPLICATIONS/BENEFITS
RMS Reverse Voltage
28
V
A
V R (RMS)
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Average Rectified Output Current (at rated
VR, TC =135ºC)
1.0
Io
Peak Repetitive Forward Current (at rated VR,
square wave, 100kHz, TC=135ºC)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave
IFRM
IFSM
2.0
50
A
A
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Small 8.45 mm2 foot print
Voltage Rate of Change (rated VR, TJ =25ºC)
dv/dt
TSTG
TJ
10,000
V/µs
ºC
(See mounting pad details next page)
Storage Temperature
-55 to +150
-55 to +125
MECHANICAL & PACKAGING
Junction Temperature
ºC
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to-case (bottom)
Junction-to-ambient (1)
RθJC
RθJA
15
240
ºC/ Watt
ºC/ Watt
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print
• POLARITY: See figure (left)
• MARKING: S40•
• WEIGHT: 0.016 grams (approx.)
• Package dimension on last page
• Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
DO-216
See further details and dimensions on last page
Copyright © 2005
8-18-2005 Rev A
Microsemi
Page 1
