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PXB16050UTRAY

型号：

PXB16050UTRAY

品牌：

NXP[ NXP ]

页数：

12 页

PDF大小：

75 K

下载PDF手册
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PXB16050U  
NPN microwave power transistor  
1997 Feb 19  
Product specification  
Supersedes data of June 1992  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
FEATURES  
QUICK REFERENCE DATA  
Microwave performance up to Tmb = 25 °C in a common base class C  
• Input and output matching cells  
allow an easier design of circuits  
narrowband amplifier.  
• Diffused emitter ballasting resistors  
providing excellent current sharing  
and withstanding a high VSWR  
MODE OF  
OPERATION  
f
VCC  
(V)  
PL  
(W)  
Gpo  
(dB)  
ηC  
(%)  
Zi/ZL  
(Ω)  
(GHz)  
Class C (CW)  
1.65  
28  
>45  
>8.5  
>45  
see Figs 6 and 7  
• Interdigitated structure provides  
high emitter efficiency  
PINNING - SOT439A  
PIN  
• Gold metallization realizes very  
stable characteristics and excellent  
lifetime  
DESCRIPTION  
1
2
3
collector  
emitter  
• Multicell geometry gives good  
balance of dissipated power and  
low thermal resistance.  
base connected to flange  
APPLICATIONS  
Common-base class C power  
amplifiers at frequencies between  
1.5 and 1.8 GHz.  
1
handbook, 4 columns  
c
b
DESCRIPTION  
3
3
NPN silicon planar epitaxial  
microwave power transistor in a  
SOT439A metal ceramic flange  
package with base connected to the  
flange.  
e
2
MAM045  
Top view  
Fig.1 Simplified outline and symbol.  
WARNING  
Product and environmental safety - toxic materials  
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.  
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety  
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of  
the user. It must never be thrown out with the general or domestic waste.  
1997 Feb 19  
2
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCBO  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
45  
UNIT  
−
−
−
−
−
−
V
VCEO  
VCES  
VEBO  
IC  
collector-emitter voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC )  
total power dissipation  
storage temperature  
junction temperature  
soldering temperature  
open base  
RBE = 0 Ω  
15  
V
45  
V
open collector  
3
V
6
A
Ptot  
Tstg  
Tj  
Tmb = 75 °C  
67  
W
°C  
°C  
°C  
−65  
−
+200  
200  
235  
Tsld  
t ≤ 10 s; note 1  
−
Note  
1. Up to 0.2 mm from ceramic.  
MGL037  
MGL038  
100  
60  
handbook, halfpage  
handbook, halfpage  
P
tot  
P
L
(W)  
(W)  
80  
40  
60  
40  
20  
20  
0
0
0
−
50  
0
100  
200  
2
4
6
8
T
(°C)  
mb  
P (W)  
i
VCC = 28 V; f = 1.65 GHz.  
Ptot max = 67 W.  
Fig.3 Load power as a function of input power  
(see Fig.4).  
Fig.2 Power derating curve.  
1997 Feb 19  
3
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
Tj = 100 °C  
note 1  
MAX.  
1.5  
UNIT  
K/W  
K/W  
Rth j-mb  
Rth mb-h  
thermal resistance from junction to mounting base  
thermal resistance from mounting base to heatsink  
0.2  
Note  
1. See “Mounting recommendations in the General part of handbook SC19a”.  
CHARACTERISTICS  
Tmb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
collector cut-off current  
CONDITIONS  
MAX.  
UNIT  
ICBO  
VCB = 40 V; IE = 0  
3
mA  
V
CB = 45 V; IE = 0  
15  
3
mA  
mA  
µA  
ICES  
IEBO  
collector cut-off current  
emitter cut-off current  
VCE = 30 V; RBE = 0  
VEB = 1.5 V; IC = 0  
300  
APPLICATION INFORMATION  
Microwave performance up to Tmb = 25 °C measured in the common base test circuit as shown in Fig.4 and working in  
CW class C mode.  
MODE OF  
OPERATION  
f
VCC  
(V)  
PL  
(W)  
Gpo  
(dB)  
ηC  
(%)  
Zi/ZL  
(Ω)  
(GHz)  
Class C (CW); 1.65  
see note 1  
28  
≥45; typ. 50  
≥8.5; typ. 9.5  
≥45; typ. 52  
see Figs 6  
and 7  
Note  
1. Type PXB16050U may be used for narrowband or broadband amplifiers within the frequency range 1.5 to 1.8 GHz.  
Operation below 1.5 GHz may damage the transistor due to resonance of the internal output prematching circuit.  
1997 Feb 19  
4
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
−V  
+V  
CC  
CC  
C2  
L2  
L1  
C1  
C3  
C4  
MGK069  
Substrate: Teflon fibreglass.  
Permittivity: εr = 2.55.  
Thickness: 0.8 mm.  
The narrowband test circuit is split into two totally independent halves each being 30 × 40 mm in size.  
Fig.4 Narrowband test circuit.  
1997 Feb 19  
5
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
2.5  
7
5
5
4
5
3
5
4
3
2.24  
2.24  
3.5  
input  
50 Ω  
output  
50 Ω  
10.5  
4
3
7.5  
MGL036  
9
5
7.5  
4
9.5  
Dimensions in mm.  
Fig.5 Narrowband test circuit dimensions.  
List of components (see Fig.4)  
COMPONENT  
DESCRIPTION  
VALUE  
CATALOGUE NO.  
L1  
4 turns 0.5 mm diameter copper wire  
internal diameter = 2 mm  
−
−
−
L2  
5 turns 0.5 mm diameter copper wire  
internal diameter = 2 mm  
−
C1  
DC blocking capacitor  
feedthrough bypass capacitor  
trimmer  
100 pF  
ATC  
C2  
−
Erie 1250-003  
C3, C4  
0.6 to 4.5 pF  
Tekelec AT-3-7271SL  
1997 Feb 19  
6
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
1
0.5  
2
0.2  
5
1.5 GHz  
10  
Z
i
+
j
1.8  
0.2  
0.5  
1
2
5
10  
0
∞
– j  
10  
5
0.2  
2
0.5  
MCD623  
1
VCC = 28 V; ZO = 10 Ω.  
Fig.6 Input impedance as a function of frequency; typical values.  
1
0.5  
2
Z
L
0.2  
5
1.8 GHz  
10  
1.5  
+ j  
– j  
0.2  
0.5  
1
2
5
10  
0
∞
10  
5
0.2  
2
0.5  
MCD622  
1
VCC = 28 V; ZO = 10 Ω.  
Fig.7 Optimum load impedance as a function of frequency; typical values.  
7
1997 Feb 19  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
PACKAGE OUTLINE  
12.85 max  
0.15 max  
6
max  
3.3  
2.9  
1.6 max  
3
23 max  
seating plane  
3.7  
max  
2.7  
min  
1
9.85  
max  
10.3  
10.0  
3.3  
2.7  
min  
2
MBC881  
8.25  
16.5  
Dimensions in mm.  
Torque on screws: max. 0.4 Nm.  
Recommended screw: M3.  
Recommended pitch for mounting screws: 19 mm.  
Fig.8 SOT439A.  
1997 Feb 19  
8
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of this specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Feb 19  
9
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
NOTES  
1997 Feb 19  
10  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
PXB16050U  
NOTES  
1997 Feb 19  
11  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 1949  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,  
Tel. +27 11 470 5911, Fax. +27 11 470 5494  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580/xxx  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 481 7730  
Hungary: see Austria  
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.  
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874  
Indonesia: see Singapore  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,  
Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA53  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
127147/00/02/pp12  
Date of release: 1997 Feb 19  
Document order number: 9397 750 01732  
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