SOT223 PNP SILICON PLANAR
FZT755
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2005
FEATURES
*
*
*
150 Volt VCEO
Low saturation voltage
C
Excellent hFE specified up to 1A (pulsed).
E
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FZT655
FZT755
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Co lle cto r-Ba s e Vo lta g e
-150
V
V
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
-150
-5
V
Pe a k Pu ls e Cu rre n t
-2
A
Co n tin u o u s Co lle cto r Cu rre n t
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
IC
-1
A
Pto t
2
W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
C o l l e c t o r - B a s e V(BR)CBO
Breakdown Voltage
-150
V
V
V
IC=-100µA
IC=-10m A*
IE=-100µA
C o l l e c t o r - E m i t t e r V(BR)CEO
Breakdown Voltage
-150
-5
Em itter-Base
V(BR)EBO
Breakdown Voltage
Collector Cut-Off Current ICBO
Em itter Cut-Off Current IEBO
-0.1
-0.1
VCB=-125V
VEB=-3V
µA
µA
C o l l e c t o r - E m i t t e r VCE(sat)
Saturation Voltage
-0.5
-0.5
V
V
IC=-500m A, IB=-50m A*
IC=-1A, IB=-200m A*
Base-Em itter
VBE(sat)
-1.1
V
IC=-500m A, IB=-50m A*
Saturation Voltage
Base-Em itter
VBE(on)
-1.0
V
IC=-500m A, VCE=-5V*
Turn-On Voltage
S ta tic Fo rw a rd Cu rre n t hFE
Transfer Ratio
50
50
20
IC=-10m A, VCE=-5V*
IC=-500m A, VCE=-5V*
IC=-1A, VCE=-5V*
300
20
Transition Frequency
Output Capacitance
fT
30
MHz IC=-1 0 m A,
f=20MHz
VCE=-20V
Cobo
pF
VCB=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
TBA
