SOT223 NPN SILICON PLANAR MEDIUM
FZT692B
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
C
*
High Gain + Very low saturation voltage
APPLICATIONS
E
*
*
Darlington replacement
C
Relay drivers, DC-DC converters
B
PARTMARKING DETAIL -
FZT692B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
70
Collector-Emitter Voltage
Emitter-Base Voltage
70
V
5
V
Peak Pulse Current
5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
2
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.
PARAMETER
BreakdownVoltages
V(BR)CBO 70
V(BR)CEO 70
V
IC=100µA
IC=10mA*
IE=100µA
V
V(BR)EBO
ICBO
5
V
Cut-Off Currents
0.1
0.1
V
CB=55V
EB=4V
µA
µA
IEBO
V
Saturation Voltages
VCE(sat)
0.15
0.5
0.5
V
V
V
IC=0.1A, IB=0.5mA*
IC=1A, IB=10mA*
IC=2A, IB=200mA*
VBE(sat)
VBE(on)
0.9
0.9
V
V
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
hFE
500
400
150
IC=100mA,VCE=2V*
IC=500mA, VCE =2V*
IC=1A,VCE=2V*
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
fT
150
MHz IC=50mA, VCE=5V, f=50MHz
Cibo
Cobo
200
12
pF
pF
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=500mA, IB1=50mA
ton
toff
46
1440
ns
ns
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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