SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FZT705
FEATURES
C
*
*
*
2A CONTINUOUS CURRENT
FAST SWITCHING
GUARANTEED HFE SPECIFIED UP TO 2A
E
COMPLEMENTARY TYPE FZT 605
PART MARKING DETAIL FZT705
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
-140
V
V
Collector-Emitter Voltage
-120
Emitter-Base Voltage
-10
V
Peak Pulse Current
-4
A
Continuous Collector Current
Power Dissipation
IC
-2
2
A
PTOT
tj:tstg
W
°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
MIN.
-140
-120
-10
TYP.
MAX. UNIT
CONDITIONS.
IC=-100mA
IC=-10mA*
IE=-100µA
Breakdown Voltages
V
V
V
Collector Cut-Off
Current
-0.1
-10
VCB=-120V
VCB=-120V, Tamb=100°C
µA
µA
ICES
-10
VCES=-80V
µA
µA
Emitter Cut-Off Current
SaturationVoltages
IEBO
-0.1
VEB=-8V
VCE(sat)
-1.3
-2.5
V
V
IC=-1A, IB=-1mA
IC=-2A, IB=-2mA
VBE(sat)
VBE(on)
-1.8
-1.7
V
V
IC=-1A, IB=-10mA
IC=-1A, VCE=-5V
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
hFE
3000
3000
3000
2000
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-1A, VCE=-5V
30000
IC=-2A, VCE=-5V
Transitional
Frequency
fT
160
MHz
IC=-100mA, VCE=-10V
f=20MHz
Output Capacitance
Switching Times
Cobo
Ton
15
pF
µs
µs
VEB=-10V, f=1MHz
0.6
0.8
IC=-0.5A, VCE=-10V
IB1=IB2=0.5mA
Toff
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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