High Frequency FETs
3SK241
GaAs N-Channel MES FET
For VHF-UHF amplification
unit: mm
2.8–+00..32
1.5–+00..32
■ Features
0.65±0.15
0.65±0.15
● Low noise-figure (NF)
● Large power gain PG
0.5R
4
3
1
2
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
Symbol
VDS
VG1S
VG2S
ID
Ratings
Unit
V
13
0.4±0.2
−6
V
1: Source
2: Drain
3: Gate2
4: Gate1
−6
V
50
mA
mA
mA
mW
°C
Gate 1 current
IG1
1
Mini Type Package (4-pin)
Gate 2 current
IG2
1
200
Marking Symbol: DU
Allowable power dissipation
Channel temperature
Storage temperature
PD
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate 2 to Drain current
Gate 1 cut-off current
Gate 2 cut-off current
Drain cut-off current
Symbol
IDSS
Conditions
min
typ
max
35
Unit
mA
µA
µA
µA
µA
V
VDS = 5V, VG1S = 0, VG2S = 0
VG2D = −13V (G1, S = Open)
8.5
IG2DO
IG1SS
IG2SS
IDSX
50
V
DS = VG2S = 0, VG1S = −6V
−20
−20
50
VDS = VG1S = 0, VG2S = −6V
VDS = 13V, VG1S = −3.5V, VG2S = 0
VDS = 5V, VG2S = 0, ID = 200µA
VDS = 5V, VG1S = 0, ID = 200µA
VDS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz
Gate 1 to Source cut-off voltage VG1SC
Gate 2 to Source cut-off voltage VG2SC
−3.5
−3.5
V
Forward transfer admittance
| Yfs |
18
23
0.4
0.3
0.02
19
mS
pF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
2
VDS = 5V, VG1S = VG2S = −6V
1.2
pF
f = 1MHz
0.04
pF
Power gain
PG
NF
GR
VDS = 5V, ID = 10mA
13
37
dB
dB
dB
Noise figure
Gain reduction
VG2S = 1.5V, f = 800MHz
VDS = 5V, VAGC = 1.5V/−3.5V, f = 800MHz
1.5
45
2.5
1
