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3SK309XV-TL

型号:

3SK309XV-TL

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

11 页

PDF大小:

62 K

3SK309  
GaAs N Channel Dual Gate MES FET  
UHF RF Amplifier  
ADE-208-472 A  
2nd. Edition  
Features  
Capable of low voltage operation (VDS = 1.5 to 3 V)  
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)  
High power gain (PG = 21.0 dB typ. at f = 900 MHz)  
Outline  
CMPAK–4  
2
3
1
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
4
3SK309  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate 1 to source voltage  
Gate 2 to source voltage  
Drain current  
6
VG1S  
VG2S  
ID  
–4  
V
–4  
V
18  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
100  
125  
Tstg  
–55 to +125  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Gate 1 to cutoff current  
IG1SS  
–20  
–20  
–1.5  
–1.5  
60  
µA  
VG1S = –4 V  
V
G2S = VDS = 0  
VG2S = –4 V  
G1S = VDS = 0  
Gate 2 to cutoff current  
IG2SS  
40  
40  
µA  
V
V
Gate 1 to source cutoff voltage VG1S(off)  
Gate 2 to source cutoff voltage VG2S(off)  
Zero gate voltege drain current IDSS  
–0.2  
–0.2  
25  
VDS = 3 V, VG2S = 0  
ID = 100 µA  
V
VDS = 3 V, VG1S = 0  
ID = 100 µA  
mA  
mS  
VDS = 3 V, VG1S = 0  
VG2S = 0  
Forward transfer admittance  
|yfs|  
30  
VDS = 3 V, VG2S = 0  
ID = 5 mA, f = 1 kHz  
Power gain  
PG  
NF  
PG  
NF  
18  
21  
1.5  
dB  
dB  
dB  
dB  
VDS = 3 V, VG2S = 0  
Noise figure  
1.25  
20  
ID = 5 mA, f = 900 MHz  
VDS = 1.5 V, VG2S = 0  
ID = 3 mA, f = 900 MHz  
Power gain  
Noise figure  
1.3  
Note: Marking is “XV–”  
2
3SK309  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
20  
16  
12  
8
200  
150  
100  
50  
–0.4 V  
–0.5 V  
–0.6 V  
Pulse Test  
–0.7 V  
–0.8 V  
4
–0.9 V  
VG1S = –1 V  
0
1
2
3
4
5
0
50  
100  
150  
200  
Drain to Source Voltage VDS (V)  
Ambient Temperature Ta (°C)  
Drain Current vs.  
Gate2 to Source Voltage  
Drain Current vs.  
Gate1 to Source Voltage  
20  
16  
12  
8
20  
VDS = 3 V  
0 V  
–0.2 V  
–0.4 V  
–0.6 V  
VDS = 3 V  
0 V  
–0.2 V  
–0.4 V  
16  
12  
8
–0.6 V  
–0.8 V  
–0.8 V  
4
0
4
0
VG2S = –1 V  
VG1S = –1 V  
–0.8 –0.4 0  
–2.0  
–1.6  
–1.2  
–2.0  
–1.6 –1.2 –0.8  
Gate1 to Source Voltage VG1S (V)  
–0.4  
0
Gate2 to Source Voltage VG2S (V)  
3
3SK309  
Forward Transfer Admittance vs.  
Drain Current  
Forward Transfer Admittance vs.  
Gate1 to Source Voltage  
100  
80  
60  
40  
20  
100  
80  
VDS = 3 V  
VDS = 3 V  
f = 1 kHz  
VG2S = 0  
f = 1 kHz  
0 V  
60  
–0.2 V  
–0.4 V  
40  
–0.6 V  
–0.8 V  
20  
0
VG2S = –1 V  
0
4
8
12  
16  
20  
–2.0 –1.6  
–1.2  
–0.8  
–0.4  
0
Drain Current ID (mA)  
Gate1 to Source Voltage VG1S (V)  
Power Gain vs. Drain Current  
3 V  
Noise Figure vs. Drain Current  
25  
20  
15  
10  
5
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 1.5 V  
DS  
V
= 1.5 V  
DS  
3 V  
V
= 0  
V
= 0  
G2S  
G2S  
f = 900 MHz  
f = 900 MHz  
0
4
8
12  
16  
20  
0
4
8
12  
16 20  
Drain Current  
I
(mA)  
Drain Current  
I
(mA)  
D
D
4
3SK309  
Power Gain vs.  
Drain to Source Voltage  
Noise Figure vs.  
Drain to Source Voltage  
25  
20  
15  
10  
5
2.0  
1.6  
1.2  
0.8  
0.4  
5 mA  
ID = 3 mA  
3 mA  
ID = 5 mA  
VG2S = 0  
VG2S = 0  
f = 900 MHz  
f = 900 MHz  
0
6
0
6
1
2
3
4
5
1
2
3
4
5
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
Gain Reduction vs.  
Power Gain vs.  
Gate2 to Source Voltage  
Gate2 to Source Voltage  
50  
40  
30  
20  
25  
20  
15  
10  
VG1S is fixed  
for ID = 5 mA  
at VG2S = 0  
VDS = 3 V  
f = 900 MHz  
VG1S is fixed  
for ID = 5 mA  
at VG2S = 0  
10  
0
5
0
VDS = 3 V  
f = 900 MHz  
–1.5  
–1.0  
–0.5  
0
0.5  
1.0  
–1  
–0.8  
–0.6 –0.4  
–0.2  
0
Gate2 to Source Voltage VG2S (V)  
Gate2 to Source Voltage VG2S (V)  
5
3SK309  
S11 Parameter vs. Frequency  
S21 Parameter vs. Frequency  
Scale: 1 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–1  
–90°  
Test Condtion: V = 3 V , V  
= 0 V  
Test Condtion: V = 3 V , V  
= 0 V  
DS  
G2S  
DS  
G2S  
I
= 5 mA , Z = 50  
o
I
= 5 mA , Z = 50Ω  
o
D
D
100 to 2000 MHz (100 MHz step)  
100 to 2000 MHz (100 MHz step)  
S12 Parameter vs. Frequency  
S22 Parameter vs. Frequency  
Scale: 0.01 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
150°  
4
.2  
5
10  
.2  
.4 .6 .8 1  
1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–1  
–90°  
Test Condtion: V = 3 V , V  
= 0 V  
Test Condtion: V = 3 V , VG2S = 0 V  
DS  
G2S  
DS  
I
= 5 mA , Z = 50Ω  
o
I
= 5 mA , Z = 50Ω  
o
D
D
100 to 2000 MHz (100 MHz step)  
100 to 2000 MHz (100 MHz step)  
6
3SK309  
Sparameter (VDS = 3 V, VG2S = 0, ID = 5 mA, Zo = 50 )  
Freq.  
S11  
S21  
MAG  
3.29  
3.27  
3.29  
3.26  
3.23  
3.22  
3.20  
3.15  
3.14  
3.12  
3.06  
3.03  
2.97  
2.93  
2.89  
2.85  
2.83  
2.79  
2.74  
2.69  
S12  
S22  
(MHz) MAG  
ANG  
–2.8  
ANG  
MAG  
ANG  
95.2  
89.0  
80.5  
83.7  
80.8  
78.1  
76.9  
77.1  
73.2  
72.1  
71.9  
70.8  
68.5  
68.5  
67.2  
66.6  
67.2  
66.0  
64.3  
63.7  
MAG  
0.963  
0.963  
0.961  
0.959  
0.957  
0.955  
0.953  
0.949  
0.946  
0.942  
0.939  
0.935  
0.931  
0.926  
0.922  
0.918  
0.913  
0.909  
0.905  
0.901  
ANG  
100  
0.999  
0.997  
0.995  
0.992  
0.981  
0.968  
0.956  
0.949  
0.935  
0.922  
0.912  
0.895  
0.873  
0.860  
0.838  
0.822  
0.807  
0.787  
0.767  
0.756  
176.7  
173.1  
169.0  
165.8  
161.9  
158.3  
154.4  
151.3  
147.4  
143.7  
140.3  
136.7  
133.3  
130.1  
126.9  
123.6  
120.5  
117.4  
114.4  
110.9  
0.00167  
0.00302  
0.00394  
0.00506  
0.00703  
0.00797  
0.00911  
0.0104  
0.0114  
0.0123  
0.0137  
0.0139  
0.0150  
0.0161  
0.0162  
0.0171  
0.0178  
0.0185  
0.0186  
0.0190  
–0.9  
200  
–5.9  
–2.2  
300  
–9.4  
–3.5  
400  
–12.3  
–15.2  
–18.9  
–21.8  
–24.5  
–27.6  
–30.7  
–33.5  
–36.2  
–38.7  
–41.4  
–43.8  
–45.6  
–48.3  
–50.7  
–52.4  
–55.0  
–5.0  
500  
–6.3  
600  
–8.0  
700  
–9.2  
800  
–10.6  
–12.0  
–13.5  
–14.7  
–16.0  
–17.3  
–18.6  
–20.2  
–21.5  
–22.7  
–23.8  
–25.5  
–26.6  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
7
3SK309  
Power Gain, Noise Figure Test Circuit  
V V  
G2  
D
Unit : Resistance (  
)
Capacitance (F)  
1000 pF  
1 k  
1000 pF  
47 k  
RFC  
1000 pF  
L1  
L3  
L4  
10 p max  
10 p max  
Output  
L2  
47 k  
(50  
)
Input  
(50  
)
1000 pF  
V
G1  
L1 to L4 : 1 mm copper wire  
φ
4
6
L1 :  
L2 :  
L3 :  
6
6
32  
25  
26  
21  
L4 :  
7
7
90°  
90°  
120°  
120°  
Unit : mm  
RFC : 3 turn, 6 mm inside dia ( φ1 mm enameled copper wire)  
8
3SK309  
Package Dimentions  
Unit: mm  
2.0±0.2  
1.3  
0.65 0.65  
+ 0.1  
– 0.06  
0.16  
+ 0.1  
– 0.05  
+ 0.1  
0.3  
0.3  
– 0.05  
3
4
2
0 ~ 0.1  
1
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
0.4  
0.65  
1.25  
0.6  
CMPAK-4  
Hitachi code  
EIAJ  
JEDEC  
9
Datasheet Title  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.  
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then  
consult a physician without delay.  
2. Disposal of this product must be handled, separately from other general refuse, by a specialist  
processing contractor in the same way as dangerous items.  
4
Datasheet Title  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
5
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