NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT690B
FEATURES
*
*
*
Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A
Gain of 400 at IC=1 Amp
C
Very low saturation voltage
APPLICATIONS
E
*
*
Darlington replacement
C
Siren Drivers, DC-DC converters
PARTMARKING DETAIL
FZT690B
B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
45
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
5
V
Peak Pulse Current
6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
3
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
PARAMETER
.
Collector-Base Breakdown
Voltage
V(BR)CBO 45
V(BR)CEO 45
V
IC=100µA
Collector-EmitterBreakdown
V
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
0.1
0.1
V
V
CB=35V
EB=4V
µA
µA
IEBO
Collector-Emitter Saturation
Voltage
VCE(sat)
0.1
0.5
V
V
IC=0.1A, IB=0.5mA*
IC=1A, IB=5mA*
Base-Emitter Saturation
Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter Turn-On Voltage VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
50
IC=100mA,VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=3A, VCE=2V*
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
fT
150
MHz IC=50mA,VCE=5V,f=50MHz
Cibo
Cobo
200
16
pF
pF
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
ton
toff
33
1300
ns
ns
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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