HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFM35N30
IXFH40N30
IXFM40N30
300V 35 A 100 mW
300V 40 A 85 mW
300V 40 A 88 mW
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr £ 200 ns
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
TJ = 25°C to 150°C; RGS = 1 MW
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
35N30
40N30
35
40
A
A
TO-204 AE (IXFM)
TC = 25°C, pulse width limited by TJM
TC = 25°C
35N30
40N30
140
160
A
A
35N30
40N30
35
40
A
A
G
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TC = 25°C
300
W
Features
TJ
-55 ... +150
150
°C
°C
°C
• Internationalstandardpackages
TJM
Tstg
• Low R
HDMOSTM process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Md
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Synchronousrectification
• Battery chargers
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
• DC choppers
VDSS
VGS = 0 V, ID = 250 mA
300
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
RDS(on)
VGS = 10 V, ID = 0.5 ID25
35N30
FH40N30
FM40N30
0.100
0.085
0.088
W
W
W
• Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
• Space savings
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91523F (07/00)
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