SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT591
ISSUE 3 - NOVEMBER 1995
✪
C
E
COMPLEMENTARY TYPE FZT491
PARTMARKING DETAIL - FZT591
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
V
-60
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Base Current
IC
-1
-200
A
IB
mA
W
°C
Power Dissipation at Tamb=25°C
Ptot
2
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNITCONDITIONS.
Breakdown Voltages
V(BR)CBO -80
V(BR)CEO -60
V(BR)EBO -5
ICBO
V
V
V
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-100µA, IC=0
Collector Cut-Off Current
Emitter Cut-Off Current
-100
-100
-100
nA VCB=-60V
IEBO
nA VEB=-4V, IC=0
nA VCES=-60V
Collector-Emitter Cut-Off Current
Emitter Saturation Voltages
ICES
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
VBE(sat)
VBE(on)
-1.2
-1.0
V
V
IC=-1A, IB=-100mA*
IC=-1A, VCE=-5V*
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
hFE
100
100
80
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
15
Transition Frequency
Output Capacitance
fT
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT591 datasheet
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