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3SK239AXR-TR

型号:

3SK239AXR-TR

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

6 页

PDF大小:

44 K

3SK239A  
GaAs Dual Gate MES FET  
Application  
UHF RF amplifier  
Features  
·
·
Excellent low noise characteristics  
(NF = 1.3 dB Typ at f = 900 MHz)  
Capable of low voltage operation  
Outline  
3SK239A  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate 1 to source voltage  
Gate 2 to source voltage  
Drain current  
12  
VG1S  
VG2S  
ID  
–6  
V
–6  
V
50  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
100  
125  
Tstg  
–55 to +125  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source leakage current IDSX  
50  
µA  
VDS = 12 V, VG1S = –3 V,  
VG2S = 0  
Gate 1 to source breakdown  
voltage  
V(BR)G1SS –6  
V(BR)G2SS –6  
V
V
IG1 = –10 µA, VG2S = VDS = 0  
Gate 2 to source breakdown  
voltage  
IG2 = –10 µA, VG1S = VDS = 0  
Gate 1 leakage current  
Gate 2 leakage current  
Drain current  
IG1SS  
IG2SS  
IDSS  
14  
–5  
µA  
µA  
mA  
V
VG1S = –5 V, VG2S = VDS = 0  
VG2S = –5 V, VG1S = VDS = 0  
VDS = 5 V, VG1S = VG2S = 0  
–5  
19  
28  
Gate 1 to source cutoff voltage VG1S(off)  
–1.2  
–1.6  
VDS = 5 V, VG2S = 0,  
ID = 100 µA  
Gate 2 to source cutoff voltage VG2S(off)  
20  
–1.2  
31  
–1.6  
V
VDS = 5 V, VG1S = 0,  
ID = 100 µA  
Forward transfer admittance  
Input capacitance  
|yfs|  
mS  
pF  
VDS = 5 V, VG2S = 1 V,  
ID = 10 mA, f = 1 kHz  
Ciss  
Coss  
0.58  
0.36  
1.0  
0.6  
VDS = 5 V, VG1S = VG2S = –3 V,  
f = 1 MHz  
Output capacitance  
17  
pF  
pF  
dB  
Reverse transfer capacitance Crss  
0.028 0.05  
Power gain  
PG  
19  
VDS = 5 V, VG2S = 1 V,  
ID = 10 mA, f = 900 MHz  
Noise figure  
NF  
1.3  
2.0  
dB  
Note: Marking is “XR–”.  
2
3SK239A  
3
3SK239A  
4
3SK239A  
5
3SK239A  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or  
part of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or  
any other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the  
examples described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party  
or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products  
are requested to notify the relevant Hitachi sales offices when planning to use the products in  
MEDICAL APPLICATIONS.  
6
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3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

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3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

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3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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