SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FZT600
FEATURES
*
*
*
2A continuous current
140 VOLT VCEO
C
Guaranteed hFE Specified up to 1A
E
PART MARKING DETAIL
FZT600
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VALUE
UNIT
V
Collector-Base Voltage
160
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
ICM
140
V
10
V
Peak Pulse Current
4
A
Continuous Collector Current
Power Dissipation
IC
2
2
A
Ptot
W
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
MIN. TYP.
160
PARAMETER
SYMBOL
V(BR)CBO
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
140
10
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
0.01
10
V
CB=140V
µA
µA
VCB=140V, Tamb=100°C
Collector Cut-Off Current
Emitter Cut-Off Current
ICES
10
VCES=140V
VEB=8V
µA
µA
IEBO
0.1
Collector-Emitter
Saturation Voltage
VCE(sat)
0.75
0.85
1.1
1.2
V
V
IC=0.5A, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage VBE(on)
1.7
1.5
1.9
1.7
V
V
IC=1A, IB=10mA*
IC=1A, VCE=5V*
Static Forward
Current Transfer
Ratio
hFE
1k
2k
1k
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
100k
100k
5k
10k
5k
10k
20k
10k
IC=50mA, VCE=10V*
IC=0.5mA, VCE=10V*
IC=1A, VCE=10V*
GROUP B
Transition Frequency
fT
150
250
MHz
IC=100mA, VCE=10V
f=20MHz
Output Capacitance
Switching Times
Cobo
Ton
10
15
MHz
µs
VCB=10V, f=1MHz
0.75
2.20
IC=0.5A, VCE=10V
IB1=IB2=0.5mA
Toff
µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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