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3SK135A-KS

型号：

3SK135A-KS

品牌：

NEC[ NEC ]

页数：

6 页

PDF大小：

55 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK135A  
RF AMP. FOR UHF TV TUNER  
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR  
4PIN MINI MOLD  
PACKAGE DIMENSIONS  
FEATURES  
in millimeters  
•
•
•
•
Suitable for use as RF amplifier in UHF TV tuner.  
Low Crss : 0.02 pF TYP.  
2.8+–00..32  
1.5+–00..12  
High Gps : 18 dB TYP.  
Low NF : 2.7 dB TYP.  
0.4+–00..015  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Drain Current  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
VDSX  
VG1S*  
VG2S*  
ID  
PT  
Tch  
20  
±10  
±10  
25  
200  
V
V
V
mA  
mW  
˚C  
0.4+–00..105  
5˚  
5˚  
5˚  
5˚  
150  
Tstg  
–65 to +150  
˚C  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
*RL ≥ 10 kΩ  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain Current  
SYMBOL  
BVDSX  
IDSS  
MIN.  
20  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
= 10 µA  
V
G1S = VG2S = –2 V, I  
D
0.01  
6
mA  
V
VDS = 5 V, VG2S = 4 V, VG1S = 0  
VDS = 10 V, VG2S = 4 V, ID = 10 µA  
VDS = 10 V, VG1S = 4 V, ID = 10 µA  
VDS = 0, VG1S = ±8 V, VG2S = 0  
VDS = 0, VG2S = ±8 V, VG1S = 0  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
VG1S(off)  
VG2S(off)  
IG1SS  
–2.0  
–0.7  
±20  
±20  
V
nA  
nA  
ms  
Gate2 Reverse Current  
IG2SS  
Forward Transter Admittance  
| yfs |  
14  
18  
VDS = 5 V, VG2S = 4 V, ID = 10 mA,  
f = 1 kHz  
Input Capacitance  
Output capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Gps*  
NF*  
1.5  
0.5  
2.5  
1.5  
pF  
pF  
pF  
dB  
dB  
VDS = 10 V, VG2S = 4 V,  
ID = 10 mA, f = 1 MHz  
1.0  
0.02  
18  
0.03  
16  
VDS = 10 V, VG2S = 4 V, ID = 10 mA,  
f = 900 MHz  
Noise Figure  
2.7  
4.5  
IDSS Classification  
Class  
Marking  
IDSS  
L/LS*  
U65  
K/KS*  
U66  
* Old specification/New specification  
0.01 to 2  
1 to 6  
Document No. P10411EJ1V0DS00 (1st edition)  
(Previous No. TN-1758)  
Date Published August 1995 P  
Printed in Japan  
1995  
©
3SK135A  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
5
4
3
V
G2S = 4 V  
400  
300  
200  
100  
V
G1S = 0  
2
1
–0.1 V  
–0.2 V  
–0.3 V  
–0.4 V  
0
25  
50  
75  
100  
125  
0
10  
VDS – Drain to Source Voltage – V  
20  
T
A
– Ambient Temperature – ˚C  
FORWARD TRANSFER ADMITTANCE vs.  
GATE 1 TO SOURCE VOLTAGE  
DRAIN CURRENT vs.  
GATE 1 TO SOURCE VOLTAGE  
25  
20  
25  
20  
V
DS = 10 V  
6 V  
4 V  
V
DS = 10 V  
f = 1 MHz  
2 V  
15  
10  
5
15  
10  
5
6 V  
4 V  
1 V  
2 V  
1 V  
V
G2S = 0  
V
G2S = 0  
0
0
–1.0  
0
+1.0  
–1.0  
0
+1.0  
V
G1S – Gate1 to Source Voltage – V  
V
G1S – Gate1 to Source Voltage – V  
INPUT CAPACITANCE vs.  
DRAIN CURRENT  
OUTPUT CAPACITANCE vs.  
GATE 2 TO SOURCE VOLTAGE  
V
DS = 10 V  
VDS = 10 V  
f = 1 MHz  
f = 1 MHz  
4
3
2
1
0
2
1
0
I
D
= 10 mA at VG2S = 4 V  
= 5 mA at VG2S = 4 V  
I
D
= 10 mA at VG2S = 4 V  
I
D
ID = 5 mA at VG2S = 4 V  
–1.0  
0
1.0  
2.0  
3.0  
4.0  
–1.0  
0
1.0  
2.0  
3.0  
4.0  
ID  
– Drain Current – mA  
VG2S – Gate2 to Source Voltage – V  
2
3SK135A  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
G
ps  
20  
10  
8
6
4
0
f = 900 MHz  
DS = 10 mA  
(at VDS = 10 V,  
I
NF  
–10  
V
G2S = 4 V)  
DS = 10 mA  
(at VDS = 5 V,  
2
0
I
–20  
VG2S = 3 V)  
–2.0  
0
2.0  
4.0  
6.0  
8.0  
V
G2S – Gate2 to Source Voltage – V  
3
3SK135A  
S-PARAMETER, Y-PARAMETER  
S1, Y1  
CONDITION  
S1-MAG & ANGL  
FREQ.  
11  
11  
11  
11  
21  
21  
21  
21  
12  
12  
12  
12  
22  
VDS = 10 V  
VG2S = 4 V  
IDS = 10 mA  
50  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1.023  
0.989  
0.966  
0.923  
0.871  
0.841  
0.776  
0.676  
0.631  
0.575  
0.537  
–2  
–8  
1.820  
1.758  
1.778  
1.758  
1.758  
1.718  
1.738  
1.718  
1.698  
1.660  
1.567  
173  
165  
153  
139  
128  
113  
101  
88  
0.002  
0.002  
0.003  
0.003  
0.008  
0.017  
0.034  
0.058  
0.089  
0.130  
0.172  
86  
102  
56  
1.023  
0.977  
0.977  
0.966  
0.933  
0.912  
0.902  
0.891  
0.881  
0.881  
0.891  
0
–4  
–7  
–11  
–22  
–23  
–33  
–34  
–41  
–43  
–47  
–49  
167  
–10  
–11  
–15  
–15  
–18  
–21  
–20  
–34  
–153  
–160  
–166  
–178  
173  
76  
64  
48  
160  
142  
Yl-MAG & ANGL  
FREQ.  
22  
22  
22  
50  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
0.405  
1.382  
1.937  
3.962  
4.327  
6.197  
6.589  
8.151  
8.287  
8.404  
8.085  
125  
85  
80  
77  
69  
71  
62  
53  
47  
44  
46  
17.780  
17.940  
18.399  
19.044  
20.003  
20.688  
21.986  
23.697  
24.190  
23.916  
22.726  
–6  
–9  
0.020  
0.024  
0.027  
0.033  
0.086  
0.205  
0.434  
0.803  
1.269  
1.878  
2.492  
–93  
–72  
–115  
2
43  
42  
35  
25  
16  
2
0.234  
0.715  
1.226  
1.773  
2.069  
2.801  
2.754  
2.973  
2.985  
2.079  
4.327  
–176  
71  
80  
78  
68  
67  
60  
58  
59  
65  
90  
–18  
–26  
–36  
–45  
–58  
–69  
–81  
–94  
–103  
–9  
S2, Y2  
CONDITION  
S2-MAG & ANGL  
FREQ.  
VDS = 10 V  
VG2S = 4 V  
IDS = 5 mA  
50  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1.023  
0.989  
0.966  
0.933  
0.891  
0.851  
0.794  
0.684  
0.624  
0.556  
0.501  
–2  
–8  
1.567  
1.531  
1.549  
1.531  
1.567  
1.531  
1.567  
1.549  
1.549  
1.531  
1.462  
174  
166  
153  
140  
129  
114  
102  
88  
0.002  
0.003  
0.003  
0.003  
0.008  
0.017  
0.035  
0.062  
0.095  
0.143  
0.191  
64  
118  
49  
1.035  
0.989  
0.977  
0.977  
0.944  
0.923  
0.912  
0.902  
0.891  
0.891  
0.891  
0
–4  
–7  
–11  
–22  
–23  
–34  
–35  
–43  
–46  
–51  
–52  
177  
–10  
–11  
–15  
–16  
–19  
–22  
–22  
–35  
–148  
–157  
–161  
–174  
176  
76  
64  
48  
163  
144  
Y2-MAG & ANGL  
FREQ.  
50  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
0.411  
1.385  
1.940  
3.946  
4.259  
6.358  
6.724  
8.534  
8.961  
9.289  
8.676  
126  
85  
80  
79  
73  
72  
64  
55  
48  
43  
43  
15.215  
15.540  
16.026  
16.402  
17.533  
18.279  
19.600  
21.366  
22.388  
22.717  
21.911  
–5  
–8  
0.022  
0.027  
0.028  
0.032  
0.087  
0.207  
0.444  
0.851  
1.380  
2.120  
2.855  
–115  
–56  
–122  
13  
48  
46  
41  
31  
21  
7
0.354  
0.690  
1.229  
1.759  
2.034  
2.770  
2.914  
3.157  
3.168  
2.336  
4.332  
–178  
80  
80  
82  
71  
69  
64  
62  
61  
67  
90  
–18  
–24  
–35  
–43  
–56  
–67  
–79  
–92  
–103  
–7  
4
3SK135A  
900 MHz Gps AND NF TEST CIRCUIT  
V
G2S (4 V)  
1 000 pF  
47 kΩ  
1 000 pF  
~ 10 pF  
~ 10 pF  
~ 10 pF  
INPUT  
50 Ω  
OUTPUT  
50 Ω  
~ 10 pF  
L2  
L1  
47 kΩ  
RFC  
1 000 pF  
1 000 pF  
L1, L2  
35 × 5 × 0.2 mm  
V
G1S  
VDD (10 V)  
V
DS = 10 V, VG2S = 4 V, I = 10 mA  
D
5
3SK135A  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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