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CYRS1543AV18

型号:

CYRS1543AV18

描述:

72兆位QDR® II SRAM四字突发[ 72-Mbit QDR® II SRAM Four-Word Burst ]

品牌:

CYPRESS[ CYPRESS ]

页数:

32 页

PDF大小:

498 K

CYRS1543AV18  
CYRS1545AV18  
72-Mbit QDR® II+ SRAM Four-Word Burst  
Architecture with RadStop™ Technology  
72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology  
Available in 165-ball CCGA (21 ×25 ×2.83 mm)  
HSTL inputs and variable drive HSTL output buffers  
JTAG 1149.1 compatible test access port  
DLL for accurate data placement  
Radiation Performance  
Radiation Data  
Total Dose =300 Krad  
Soft error rate (both Heavy Ion and proton)  
Heavy ions 1 × 10-10 upsets/bit-day with single error  
correction - double error detection error detection and  
correction (SEC-DED EDAC)  
Configurations  
CYRS1543AV18 – 4 M × 18  
Neutrons = 2.0 × 1014 N/cm2  
CYRS1545AV18 – 2 M × 36  
Dose rate = 2.0 × 109 rad(Si)/sec  
Functional Description  
Dose rate survivability (rad(Si)/sec) = 1.5 × 10^11 (rad(Si)/sec  
Latch up immunity = 120 MeV.cm2/mg (125 °C)  
The CYRS1543AV18 and CYRS1545AV18 are synchronous  
pipelined SRAMs, equipped with 1.8 V QDR II+ architecture with  
RadStop™ technology. Cypress’s state-of-the-art RadStop  
Technology is radiation hardened through proprietary design and  
process hardening techniques.  
Prototyping  
Non-qualified CYPT1543AV18, and CYPT1545AV18 devices  
with same functional and timing characteristics in a  
165-ball Ceramic Column Grid Array (CCGA) package  
The QDR II+ architecture consists of two separate ports: the read  
port and the write port to access the memory array. The read port  
has dedicated data outputs to support read operations and the  
write port has dedicated data inputs to support write operations.  
QDR II+ architecture has separate data inputs and data outputs  
to completely eliminate the need to turnaround the data bus that  
exists with common I/O devices. Each port can be accessed  
through a common address bus. Addresses for read and write  
addresses are latched on alternate rising edges of the input (K)  
clock. Accesses to the QDR II+ read and write ports are  
completely independent of one another. To maximize data  
throughput, both read and write ports are equipped with DDR  
interfaces. Each address location is associated with four 18-bit  
words (CYRS1543AV18) or 36-bit words (CYRS1545AV18) that  
burst sequentially into or out of the device. Because data can be  
transferred into and out of the device on every rising edge of both  
input clocks (K and K), memory bandwidth is maximized while  
simplifying system design by eliminating bus turnarounds.  
Features  
Separate independent read and write data ports  
Supports concurrent transactions  
250 MHz clock for high bandwidth  
4-word burst for reducing address bus frequency  
Double data rate (DDR) interfaces on both read and write ports  
at 250 MHz (data transferred at 500 MHz)  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Depth expansion is accomplished with port selects, which  
enables each port to operate independently.  
Single multiplexed address input bus latches address inputs  
for read and write ports  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the K or K input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
QDR® II+ operates with 2.0 cycle read latency when the delay  
lock loop (DLL) is enabled  
Selection Guide  
Description  
250 MHz Unit  
Available in × 18, and × 36 configurations  
Maximum operating frequency  
250  
1225  
1225  
MHz  
mA  
Full data coherency, providing most current data  
Core VDD = 1.8 (± 0.1 V); I/O VDDQ = 1.4 V to VDD  
Maximum operating current (125C, × 18  
concurrent R/W)  
× 36  
Cypress Semiconductor Corporation  
Document Number: 001-60007 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 4, 2013  
CYRS1543AV18  
CYRS1545AV18  
Logic Block Diagram – CYRS1543AV18  
18  
D
[17:0]  
Write Write Write Write  
20  
Address  
Register  
A
Reg  
Reg  
Reg  
Reg  
(19:0)  
20  
Address  
Register  
A
(19:0)  
RPS  
K
Control  
Logic  
CLK  
Gen.  
K
DOFF  
Read Data Reg.  
CQ  
CQ  
72  
36  
V
REF  
18  
18  
18  
18  
Reg.  
Reg.  
Reg.  
Control  
Logic  
WPS  
BWS  
18  
36  
Q
[17:0]  
[1:0]  
QVLD  
Logic Block Diagram – CYRS1545AV18  
36  
D
[35:0]  
Write Write Write Write  
19  
Address  
Register  
A
Reg  
Reg  
Reg  
Reg  
(18:0)  
19  
Address  
Register  
A
(18:0)  
RPS  
K
Control  
Logic  
CLK  
Gen.  
K
DOFF  
Read Data Reg.  
CQ  
CQ  
144  
72  
V
REF  
36  
36  
36  
36  
Reg.  
Reg.  
Reg.  
Control  
Logic  
WPS  
BWS  
36  
72  
Q
[35:0]  
[3:0]  
QVLD  
Document Number: 001-60007 Rev. *H  
Page 2 of 32  
CYRS1543AV18  
CYRS1545AV18  
Contents  
Manufacturing Flow ..........................................................4  
Radiation Hardened Design ........................................4  
Neutron Soft Error Immunity ...........................................4  
Pin Configuration .............................................................5  
Pin Definitions ..................................................................6  
Functional Overview ........................................................8  
Read Operations .........................................................8  
Write Operations .........................................................8  
Byte Write Operations .................................................8  
Concurrent Transactions .............................................8  
Depth Expansion .........................................................9  
Programmable Impedance ..........................................9  
Echo Clocks ................................................................9  
Valid Data Indicator (QVLD) ........................................9  
DLL ..............................................................................9  
Qualification and Screening ........................................9  
Application Example ......................................................10  
Truth Table ......................................................................11  
Write Cycle Descriptions ...............................................11  
Write Cycle Descriptions ...............................................12  
IEEE 1149.1 Serial Boundary Scan (JTAG) ..................13  
Disabling the JTAG Feature ......................................13  
Test Access Port .......................................................13  
Performing a TAP Reset ...........................................13  
TAP Registers ...........................................................13  
TAP Instruction Set ...................................................13  
TAP Controller State Diagram .......................................15  
TAP Controller Block Diagram ......................................16  
TAP Electrical Characteristics ......................................16  
TAP AC Switching Characteristics ...............................17  
TAP Timing and Test Conditions ..................................18  
Identification Register Definitions ................................19  
Scan Register Sizes .......................................................19  
Instruction Codes ...........................................................19  
Boundary Scan Order ....................................................20  
Power Up Sequence in QDR II+ SRAM .........................21  
Power Up Sequence .................................................21  
DLL Constraints .........................................................21  
Maximum Ratings ...........................................................22  
Operating Range .............................................................22  
Electrical Characteristics ...............................................22  
DC Electrical Characteristics .....................................22  
AC Electrical Characteristics .....................................23  
Radiation Performance ..................................................23  
Capacitance ....................................................................23  
Thermal Resistance ........................................................23  
AC Test Loads and Waveforms .....................................24  
Switching Characteristics ..............................................25  
Switching Waveforms ....................................................26  
Ordering Information ......................................................27  
Ordering Code Definitions .........................................27  
Package Diagram ............................................................28  
Acronyms ........................................................................29  
Document Conventions .................................................29  
Units of Measure .......................................................29  
Glossary ..........................................................................30  
Document History Page .................................................31  
Sales, Solutions, and Legal Information ......................32  
Worldwide Sales and Design Support .......................32  
Products ....................................................................32  
PSoC Solutions .........................................................32  
Document Number: 001-60007 Rev. *H  
Page 3 of 32  
CYRS1543AV18  
CYRS1545AV18  
Manufacturing Flow  
Step  
Screen  
Method  
Requirement  
1
2
3
4
5
6
7
8
9
Wafer lot acceptance test  
Internal visual  
TM 5007  
2010, Condition A  
100%  
100%  
100%  
100%  
Serialization  
Temperature cycling  
Constant acceleration  
1010, Condition C, 50 cycles minimum  
2001, YI orientation only  
Condition TBD (package in design)  
2020 Condition A  
Particle impact noise detection (PIND)  
Radiographic (X-Ray)  
100%  
2012, one view (Y-1 orientation) only  
In accordance with applicable Cypress specification  
1015, Condition D  
Pre burn in electrical parameters  
100%  
100%  
10 Dynamic burn in  
240 hours at 125 °C or 120 hours at 150 °C minimum  
11 Interim (Post dynamic burn in) electricals  
12 Static burn in  
In accordance with applicable Cypress device specifications  
100%  
100%  
1015, Condition C, 72 hours at 150 °C or 144 hours at 125 °C  
minimum  
13 Interim (post static burn in) electricals  
In accordance with applicable Cypress device specifications  
5% overall, 3% functional parameters at 25 °C  
100%  
14 Percentage defective allowable (PDA)  
calculation  
All lots  
15 Final electrical test  
a. Static tests  
In accordance with applicable Cypress device specifications  
100%  
(1) 25 °C  
5005, Table I, Subgroup 1  
5005, Table I, Subgroup 2, 3  
(2) –55 °C and +125 °C  
b. Functional tests  
(1) 25 C  
5005, Table I, Subgroup 7  
5005, Table I, Subgroup 8a, 8b  
5005, Table I, Subgroup 9  
1014  
(2) –55 °C and +125 °C  
c. Switching test at 25 °C  
16 Seal (fine and gross leak test)  
17 External visual  
18 Wafer lot specific life test (Group C)  
100%  
100%  
2009  
Mil-PRF 38535, Appendix B, section B.4.2.c  
All wafer lots  
Radiation Hardened Design  
Neutron Soft Error Immunity  
The single event latch up (SEL) immunity is improved by a  
radiation hardened design technique developed by Cypress  
called RadStop. This design mitigation technique allows the SEL  
performance to achieve radiation hard performance levels.  
Test  
Conditions  
Parameter Description  
Typ Max* Unit  
LSBU  
LMBU  
SEL  
Logical  
single-bit  
upsets  
25 °C  
25 °C  
85 °C  
320 368 FIT/  
Mb  
Logical  
multi-bit  
upsets  
0
0
0.01 FIT/  
Mb  
Single event  
latch up  
0.1  
FIT/  
Dev  
* No LMBU or SEL events occurred during testing; this column represents a  
2
statistical , 95% confidence limit calculation. For more details refer to  
Application Note AN54908 “Accelerated Neutron SER Testing and Calculation  
of Terrestrial Failure Rates”  
Document Number: 001-60007 Rev. *H  
Page 4 of 32  
CYRS1543AV18  
CYRS1545AV18  
Pin Configuration  
Pin configurations for CYRS1543AV18 and CYRS1545AV18. [1]  
Figure 1. 165-ball CCGA pinout  
CYRS1543AV18 (4 M × 18)  
1
CQ  
NC  
NC  
NC  
NC  
NC  
NC  
DOFF  
NC  
NC  
NC  
NC  
NC  
NC  
TDO  
2
NC/144M  
Q9  
3
4
5
BWS1  
NC  
A
6
K
7
NC/288M  
BWS0  
A
8
9
A
10  
A
11  
CQ  
Q8  
D8  
D7  
Q6  
Q5  
D5  
ZQ  
D4  
Q3  
Q2  
D2  
D1  
Q0  
TDI  
A
B
C
D
E
F
A
WPS  
A
RPS  
A
D9  
K
NC  
NC  
NC  
NC  
NC  
NC  
VDDQ  
NC  
NC  
NC  
NC  
NC  
NC  
A
NC  
Q7  
NC  
D6  
NC  
D10  
Q10  
Q11  
D12  
Q13  
VDDQ  
D14  
Q14  
D15  
D16  
Q16  
Q17  
A
VSS  
VSS  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VSS  
VSS  
A
NC  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
A
VSS  
VSS  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VSS  
VSS  
A
D11  
NC  
VSS  
VSS  
VDD  
VDD  
VDD  
VDD  
VDD  
VSS  
VSS  
A
VSS  
VSS  
VDD  
VDD  
VDD  
VDD  
VDD  
VSS  
VSS  
A
Q12  
D13  
VREF  
NC  
NC  
NC  
VREF  
Q4  
D3  
G
H
J
K
L
NC  
Q15  
NC  
NC  
Q1  
NC  
D0  
M
N
P
R
D17  
NC  
A
QVLD  
NC  
A
TCK  
A
A
A
A
TMS  
CYRS1545AV18 (2 M × 36)  
1
2
NC/288M  
Q18  
Q28  
D20  
3
4
5
BWS2  
BWS3  
A
6
K
7
BWS1  
BWS0  
A
8
9
10  
NC/144M  
Q17  
Q7  
11  
CQ  
Q8  
D8  
D7  
Q6  
Q5  
D5  
ZQ  
D4  
Q3  
Q2  
D2  
D1  
Q0  
TDI  
A
B
C
D
E
F
CQ  
A
WPS  
A
RPS  
A
A
Q27  
D27  
D28  
Q29  
Q30  
D30  
DOFF  
D31  
Q32  
Q33  
D33  
D34  
Q35  
TDO  
D18  
D19  
Q19  
Q20  
D21  
Q22  
VDDQ  
D23  
Q23  
D24  
D25  
Q25  
Q26  
A
K
D17  
D16  
Q16  
Q15  
D14  
Q13  
VDDQ  
D12  
Q12  
D11  
D10  
Q10  
Q9  
VSS  
VSS  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VSS  
VSS  
A
NC  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
VSS  
A
VSS  
VSS  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VDDQ  
VSS  
VSS  
A
VSS  
VSS  
VDD  
VDD  
VDD  
VDD  
VDD  
VSS  
VSS  
A
VSS  
VSS  
VDD  
VDD  
VDD  
VDD  
VDD  
VSS  
VSS  
A
D15  
D6  
D29  
Q21  
D22  
Q14  
D13  
VREF  
Q4  
G
H
J
VREF  
Q31  
D32  
K
L
D3  
Q24  
Q34  
D26  
Q11  
Q1  
M
N
P
R
D9  
D35  
A
QVLD  
NC  
A
D0  
TCK  
A
A
A
A
A
TMS  
Note  
1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.  
Document Number: 001-60007 Rev. *H  
Page 5 of 32  
CYRS1543AV18  
CYRS1545AV18  
Pin Definitions  
Pin Name  
I/O  
Pin Description  
Data input signals. Sampled on the rising edge of K and K clocks when valid write operations are active.  
D[x:0]  
Input-  
Synchronous CYRS1543AV18 D[17:0]  
CYRS1545AV18 D[35:0]  
WPS  
Input-  
Write port select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a  
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]  
.
BWS0,  
BWS1,  
BWS2,  
BWS3  
Input-  
Byte write select (BWS) 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and K clocks  
Synchronous when write operations are active. Used to select which byte is written into the device during the current  
portion of the write operations. Bytes not written remain unaltered.  
CYRS1543AV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].  
CYRS1545AV18 BWS0 controls D[8:0], BWS1 controls D[17:9]  
,
BWS2 controls D[26:18] and BWS3 controls D[35:27].  
All the BWS are sampled on the same edge as the data. Deselecting a BWS ignores the corresponding  
byte of data and it is not written into the device  
.
A
Input-  
Address inputs. Sampled on the rising edge of the K clock during active read and write operations.  
Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is  
organized as 4 M × 18 (4 arrays each of 1 M × 18) for CYRS1543AV18 and 2 M × 36 (4 arrays each of  
512 K × 36) for CYRS1545AV18. Therefore, only 20 address inputs for CYRS1543AV18 and 19 address  
inputs for CYRS1545AV18. These inputs are ignored when the appropriate port is deselected.  
Q[x:0]  
Outputs-  
Data output signals. These pins drive out the requested data when the read operation is active. Valid  
Synchronous data is driven out on the rising edge of the K and K clocks during read operations. On deselecting the  
read port, Q[x:0] are automatically tristated.  
CYRS1543AV18 Q[17:0]  
CYRS1545AV18 Q[35:0]  
RPS  
Input-  
Read port select Active LOW. Sampled on the rising edge of positive input clock (K). When active,  
Synchronous a read operation is initiated. Deasserting deselects the read port. When deselected, the pending access  
is allowed to complete and the output drivers are automatically tristated following the next rising edge of  
the K clock. Each read access consists of a burst of four sequential transfers.  
QVLD  
K
Valid Output Valid output indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.  
Indicator  
Input Clock Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device  
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising  
edge of K.  
K
Input Clock Negative input clock input. K is used to capture synchronous inputs being presented to the device and  
to drive out data through Q[x:0] when in single clock mode.  
CQ  
CQ  
ZQ  
Echo Clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock  
K. The timings for the echo clocks are shown in the Switching Characteristics on page 25.  
Echo Clock CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock  
K. The timings for the echo clocks are shown in the Switching Characteristics on page 25.  
Input  
Input  
Output impedance matching input. This input is used to tune the device outputs to the system data  
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor  
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which  
enables the minimum impedance mode. This pin cannot be connected directly to GND or left  
unconnected.  
DOFF  
TDO  
DLL turn off Active LOW. Connecting this pin to ground turns off the DLL inside the device. The  
timings in the DLL turned off operation differs from those listed in this data sheet. For normal operation,  
this pin can be connected to a pull up through a 10 Kor less pull up resistor. The device behaves in  
QDR I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up  
to 167 MHz with QDR I timing.  
Output  
Test data out (TDO) for JTAG.  
Document Number: 001-60007 Rev. *H  
Page 6 of 32  
CYRS1543AV18  
CYRS1545AV18  
Pin Definitions (continued)  
Pin Name  
TCK  
I/O  
Input  
Input  
Input  
N/A  
Pin Description  
Test clock (TCK) Pin for JTAG.  
Test data in (TDI) Pin for JTAG.  
Test mode select (TMS) Pin for JTAG.  
TDI  
TMS  
NC  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
NC/144M  
NC/288M  
VREF  
N/A  
N/A  
Input-  
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC  
Reference measurement points.  
VDD  
VSS  
Power Supply Power supply inputs to the core of the device.  
Ground  
Ground for the device.  
VDDQ  
Power Supply Power supply inputs for the outputs of the device.  
Document Number: 001-60007 Rev. *H  
Page 7 of 32  
CYRS1543AV18  
CYRS1545AV18  
seamless transition between devices without the insertion of wait  
states in a depth expanded memory.  
Functional Overview  
The CYRS1543AV18, CYRS1545AV18 are synchronous  
pipelined burst SRAMs with a read port and a write port. The read  
port is dedicated to read operations and the write port is  
dedicated to write operations. Data flows into the SRAM through  
the write port and flows out through the read port. These devices  
multiplex the address inputs to minimize the number of address  
pins required. By having separate read and write ports, the  
QDR II completely eliminates the need to turnaround the data  
bus and avoids any possible data contention, thereby simplifying  
system design. Each access consists of four 18-bit data transfers  
in the case of CYRS1543AV18, and four 36-bit data transfers in  
the case of CYRS1545AV18 in two clock cycles.  
Write Operations  
Write operations are initiated by asserting WPS active at the  
rising edge of the positive input clock (K). On the following K  
clock rise the data presented to D[17:0] is latched and stored into  
the lower 18-bit write data register, provided BWS[1:0] are both  
asserted active. On the subsequent rising edge of the negative  
input clock (K) the information presented to D[17:0] is also stored  
into the write data register, provided BWS[1:0] are both asserted  
active. This process continues for one more cycle until four 18-bit  
words (a total of 72 bits) of data are stored in the SRAM. The  
72 bits of data are then written into the memory array at the  
specified location. Therefore, write accesses to the device can  
not be initiated on two consecutive K clock rises. The internal  
logic of the device ignores the second write request. Write  
accesses can be initiated on every other rising edge of the  
positive input clock (K). Doing so pipelines the data flow such  
that 18 bits of data can be transferred into the device on every  
rising edge of the input clocks (K and K).  
This device operates with a read latency of two cycles when  
DOFF pin is tied HIGH. When DOFF pin is set LOW or connected  
to VSS then device behaves in QDR I mode with a read latency  
of one clock cycle.  
Accesses for both ports are initiated on the positive input clock  
(K). All synchronous input timing is referenced from the rising  
edge of the input clocks (K and K) and all output timing is  
referenced to the output clocks (K and K).  
When deselected, the write port ignores all inputs after the  
pending write operations have been completed.  
All synchronous data inputs (D[x:0]) pass through input registers  
controlled by the input clocks (K and K). All synchronous data  
outputs (Q[x:0]) pass through output registers controlled by the  
rising edge of the output clocks (K and K).  
Byte Write Operations  
Byte write operations are supported by the CYRS1543AV18. A  
write operation is initiated as described in the Write Operations  
section. The bytes that are written are determined by BWS0 and  
BWS1, which are sampled with each set of 18-bit data words.  
Asserting the appropriate BWS input during the data portion of a  
write latches the data being presented and writes it into the  
device. Deasserting the BWS input during the data portion of a  
write allows the data stored in the device for that byte to remain  
unaltered. This feature can be used to simplify read, modify, or  
write operations to a byte write operation.  
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass  
through input registers controlled by the rising edge of the input  
clocks (K and K).  
CYRS1543AV18 is described below. The same basic  
descriptions also apply to CYRS1545AV18.  
Read Operations  
The CYRS1543AV18 is organized internally as four arrays of  
1 M × 18. Accesses are completed in a burst of four sequential  
18-bit data words. Read operations are initiated by asserting  
RPS active at the rising edge of the positive input clock (K). The  
address presented to the address inputs is stored in the read  
address register. Following the next two K clock rise, the  
corresponding lowest order 18-bit word of data is driven onto the  
Concurrent Transactions  
The read and write ports on the CYRS1543AV18 operate  
independently of one another. As each port latches the address  
inputs on different clock edges, you can read or write to any  
location, regardless of the transaction on the other port. If the  
ports access the same location when a read follows a write in  
successive clock cycles, the SRAM delivers the most recent  
information associated with the specified address location. This  
includes forwarding data from a write cycle that was initiated on  
the previous K clock rise.  
Q
[17:0] using K as the output timing reference. On the subsequent  
rising edge of Kb, the next 18-bit data word is drive onto the  
QQ[17:0]. This process continues until all four 18-bit data words  
have been driven out onto Q[17:0]. The requested data is valid  
0.45 ns from the rising edge of the output clock (K or K). To  
maintain the internal logic, each read access must be allowed to  
complete. Each read access consists of four 18-bit data words  
and takes two clock cycles to complete. Therefore, read  
accesses to the device can not be initiated on two consecutive  
K clock rises. The internal logic of the device ignores the second  
read request. Read accesses can be initiated on every other K  
clock rise. Doing so pipelines the data flow such that data is  
transferred out of the device on every rising edge of the output  
clocks (K and K).  
Read access and write access must be scheduled such that one  
transaction is initiated on any clock cycle. If both ports are  
selected on the same K clock rise, the arbitration depends on the  
previous state of the SRAM. If both ports are deselected, the  
read port takes priority. If a read was initiated on the previous  
cycle, the write port takes priority (as read operations can not be  
initiated on consecutive cycles). If a write was initiated on the  
previous cycle, the read port takes priority (as write operations  
can not be initiated on consecutive cycles). Therefore, asserting  
both port selects active from a deselected state results in alter-  
nating read or write operations being initiated, with the first  
access being a read.  
When the read port is deselected, the CYRS1543AV18 first  
completes the pending read transactions. Synchronous internal  
circuitry automatically tri-states the outputs following the next  
rising edge of the positive input clock (K). This allows for a  
Document Number: 001-60007 Rev. *H  
Page 8 of 32  
CYRS1543AV18  
CYRS1545AV18  
Depth Expansion  
DLL  
The CYRS1543AV18 has a port select input for each port. This  
allows for easy depth expansion. Both port selects are sampled  
on the rising edge of the positive input clock only (K). Each port  
select input can deselect the specified port. Deselecting a port  
does not affect the other port. All pending transactions (read and  
write) are completed before the device is deselected.  
These chips use a DLL that is designed to function between  
120 MHz and the specified maximum clock frequency. During  
power up, when the DOFF is tied HIGH, the DLL is locked after  
10240 cycles of stable clock. The DLL can also be reset by  
slowing or stopping the input clocks K and K for a minimum of  
30 ns. The DLL may be disabled by applying ground to the DOFF  
pin. When the DLL is turned off, the device behaves in QDR I  
mode (with one cycle latency and a longer access time). For  
information refer to the application note AN5062, DLL Consider-  
ations in QDRII/DDRII.  
Programmable Impedance  
An external resistor, RQ, must be connected between the ZQ pin  
on the SRAM and VSS to allow the SRAM to adjust its output  
driver impedance. The value of RQ must be 5 × the value of the  
intended line impedance driven by the SRAM, the allowable  
range of RQ to guarantee impedance matching with a tolerance  
of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The  
output impedance is adjusted every 1024 cycles upon power up  
to account for drifts in supply voltage and temperature.  
Qualification and Screening  
The 90 nm RadStop technology was qualified by Cypress after  
meeting the criteria of the General Manufacturing Standards.  
The test flow includes screening units with the defined flow  
(Class V) and the appropriate periodic or lot conformance testing  
(Groups B, C, D, and E). Both the 90 nm process and the SRAM  
products are subject to period or lot based technology confor-  
mance inspection (TCI) and quality conformance inspection  
(QCI) tests, respectively. Cypress offers both prototyping models  
and flight units of these product configurations.  
Echo Clocks  
Echo clocks are provided on the QDR II+ to simplify data capture  
on high-speed systems. Two echo clocks are generated by the  
QDR II+. CQ is referenced with respect to K and CQ is  
referenced with respect to K. These are free-running clocks and  
are synchronized to the input clock of the QDR II+. The timing  
for the echo clocks is shown in the Switching Characteristics on  
page 25.  
Table 1. Qualification Tests  
Group A  
Group B  
General electrical tests  
Mechanical - Dimensions,  
bond strength, solvents, die  
shear, solderability, lead  
Integrity, seal, and  
Valid Data Indicator (QVLD)  
QVLD is provided on the QDR II+ to simplify data capture on high  
speed systems. The QVLD is generated by the QDR II+ device  
along with data output. This signal is also edge-aligned with the  
echo clock and follows the timing of any data pin. This signal is  
asserted half a cycle before valid data arrives.  
acceleration  
Group C  
Group D  
Life tests - 1000 hours at  
125 °C or equivalent  
Package related mechanical  
tests - shock, vibration, accel,  
salt, seal, lead finish adhesion,  
lid torque, thermal shock, and  
moisture resistance  
Group E  
Radiation tests  
Document Number: 001-60007 Rev. *H  
Page 9 of 32  
CYRS1543AV18  
CYRS1545AV18  
Application Example  
Figure 2 shows four QDR II+ used in an application.  
Figure 2. Application Example  
RQ = 250 ohms  
RQ = 250 ohms  
ZQ  
CQ/CQ  
Q
ZQ  
SRAM #2  
SRAM #1  
BWS  
Vt  
CQ/CQ  
Q
D
D
A
R
K
K
A RPS WPS  
K
K
BWS  
RPS WPS  
DATA IN  
DATA OUT  
Address  
R
R
Vt  
Vt  
RPS  
BUS MASTER  
WPS  
BWS  
(CPU or ASIC)  
CLKIN1/CLKIN1  
CLKIN2/CLKIN2  
Source K  
Source K  
R = 50ohms, Vt = V  
/2  
R
DDQ  
Document Number: 001-60007 Rev. *H  
Page 10 of 32  
CYRS1543AV18  
CYRS1545AV18  
Truth Table  
CYRS1543AV18 and CYRS1545AV18 [2, 3, 4, 5, 6, 7]  
Operation  
Write cycle:  
K
RPS WPS  
DQ  
DQ  
DQ  
DQ  
L–H  
H [8] L [9] D(A) at K(t + 1)D(A + 1) at K(t + 1)D(A + 2) at K(t + 2)D(A + 3) at K(t + 2)  
Load address on the  
rising edge of K; input  
write data on two  
consecutive K and K  
rising edges.  
Read cycle: (2.0 Cycle  
Latency) Load address  
on the rising edge of K;  
wait two cycles; read  
data on two consecutive  
K and K rising edges.  
L–H  
L–H  
L [9]  
X
Q(A) at K(t + 2)Q(A + 1) at K(t + 2)Q(A + 2) at K(t + 3)Q(A + 3) at K(t + 3)  
NOP: No operation  
H
X
H
X
D = X  
Q = High Z  
D = X  
Q = High Z  
D = X  
Q = High Z  
D = X  
Q = High Z  
Standby: Clock stopped Stopped  
Previous state  
Previous state  
Previous state  
Previous state  
Write Cycle Descriptions  
CYRS1543AV18 [2, 10]  
BWS0 BWS1  
K
Comments  
K
L
L
L–H  
During the data portion of a write sequence:  
CYRS1543AV18 both bytes (D[17:0]) are written into the device.  
L
L
L–H  
L–H During the data portion of a write sequence  
CYRS1543AV18 both bytes (D[17:0]) are written into the device.  
L
H
H
L
During the data portion of a write sequence:  
CYRS1543AV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.  
L
L–H During the data portion of a write sequence  
CYRS1543AV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.  
H
H
L–H  
During the data portion of a write sequence  
CYRS1543AV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.  
L
L–H During the data portion of a write sequence  
CYRS1543AV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.  
H
H
H
H
L–H  
No data is written into the devices during this portion of a write operation.  
L–H No data is written into the devices during this portion of a write operation.  
Notes  
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.  
3. Device powers up deselected with the outputs in a tristate condition.  
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.  
5. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and thirdclock cycles respectively succeeding the “t” clock cycle.  
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.  
7. We recommend that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.  
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.  
9. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the  
second read or write request.  
10. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS , BWS , BWS , and BWS can be altered on different portions  
0
1
2
3
of a write cycle, as long as the setup and hold requirements are achieved.  
Document Number: 001-60007 Rev. *H  
Page 11 of 32  
CYRS1543AV18  
CYRS1545AV18  
Write Cycle Descriptions  
The write cycle description table for CYRS1545AV18 follows. [11, 12]  
BWS0 BWS1 BWS2 BWS3  
K
K
Comments  
L
L
L
L
L–H  
During the data portion of a write sequence, all four bytes (D[35:0]) are written into  
the device.  
L
L
L
L
L–H  
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into  
the device.  
L
H
H
L
H
H
H
H
L
H
H
H
H
H
H
L
During the data portion of a write sequence, only the lower byte (D[8:0]) is written  
into the device. D[35:9] remains unaltered.  
L
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written  
into the device. D[35:9] remains unaltered.  
H
H
H
H
H
H
L–H  
During the data portion of a write sequence, only the byte (D[17:9]) is written into the  
device. D[8:0] and D[35:18] remains unaltered.  
L
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the  
device. D[8:0] and D[35:18] remains unaltered.  
H
H
H
H
L–H  
During the data portion of a write sequence, only the byte (D[26:18]) is written into  
the device. D[17:0] and D[35:27] remains unaltered.  
L
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into  
the device. D[17:0] and D[35:27] remains unaltered.  
H
H
L–H  
During the data portion of a write sequence, only the byte (D[35:27]) is written into  
the device. D[26:0] remains unaltered.  
L
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into  
the device. D[26:0] remains unaltered.  
H
H
H
H
H
H
H
H
L–H  
No data is written into the device during this portion of a write operation.  
L–H No data is written into the device during this portion of a write operation.  
Notes  
11. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.  
12. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS , NWS , BWS , BWS , BWS , and BWS can be altered on  
0
1
0
1
2
3
different portions of a write cycle, as long as the setup and hold requirements are achieved.  
Document Number: 001-60007 Rev. *H  
Page 12 of 32  
CYRS1543AV18  
CYRS1545AV18  
Instruction Register  
IEEE 1149.1 Serial Boundary Scan (JTAG)  
Three-bit instructions can be serially loaded into the instruction  
register. This register is loaded when it is placed between the TDI  
and TDO pins, as shown in TAP Controller Block Diagram on  
page 16. Upon power up, the instruction register is loaded with  
the IDCODE instruction. It is also loaded with the IDCODE  
instruction if the controller is placed in a reset state, as described  
in the previous section.  
These SRAMs incorporate a serial boundary scan Test Access  
Port (TAP) in the FBGA package. This part is fully compliant with  
IEEE Standard #1149.1-2001. The TAP operates using JEDEC  
standard 1.8 V I/O logic levels.  
Disabling the JTAG Feature  
It is possible to operate the SRAM without using the JTAG  
feature. To disable the TAP controller, TCK must be tied LOW  
(VSS) to prevent clocking of the device. TDI and TMS are  
internally pulled up and may be unconnected. They may  
alternatively be connected to VDD through a pull up resistor. TDO  
must be left unconnected. Upon power up, the device comes up  
in a reset state, which does not interfere with the operation of the  
device.  
When the TAP controller is in the Capture-IR state, the two least  
significant bits are loaded with a binary “01” pattern to allow for  
fault isolation of the board level serial test path.  
Bypass Register  
To save time when serially shifting data through registers, it is  
sometimes advantageous to skip certain chips. The bypass  
register is a single-bit register that can be placed between TDI  
and TDO pins. This enables shifting of data through the SRAM  
with minimal delay. The bypass register is set LOW (VSS) when  
the BYPASS instruction is executed.  
Test Access Port  
Test Clock  
The test clock is used only with the TAP controller. All inputs are  
captured on the rising edge of TCK. All outputs are driven from  
the falling edge of TCK.  
Boundary Scan Register  
The boundary scan register is connected to all of the input and  
output pins on the SRAM. Several no connect (NC) pins are also  
included in the scan register to reserve pins for higher density  
devices.  
Test Mode Select (TMS)  
The TMS input is used to give commands to the TAP controller  
and is sampled on the rising edge of TCK. This pin may be left  
unconnected if the TAP is not used. The pin is pulled up  
internally, resulting in a logic HIGH level.  
The boundary scan register is loaded with the contents of the  
RAM input and output ring when the TAP controller is in the  
Capture-DR state and is then placed between the TDI and TDO  
pins when the controller is moved to the Shift-DR state. The  
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can  
be used to capture the contents of the input and output ring.  
Test Data In (TDI)  
The TDI pin is used to serially input information into the registers  
and can be connected to the input of any of the registers. The  
register between TDI and TDO is chosen by the instruction that  
is loaded into the TAP instruction register. For information on  
loading the instruction register, see the TAP Controller State  
Diagram on page 15. TDI is internally pulled up and can be  
unconnected if the TAP is unused in an application. TDI is  
connected to the most significant bit (MSB) on any register.  
The Boundary Scan Order on page 20 shows the order in which  
the bits are connected. Each bit corresponds to one of the bumps  
on the SRAM package. The MSB of the register is connected to  
TDI, and the LSB is connected to TDO.  
Identification (ID) Register  
The ID register is loaded with a vendor-specific, 32-bit code  
during the Capture-DR state when the IDCODE command is  
loaded in the instruction register. The IDCODE is hardwired into  
the SRAM and can be shifted out when the TAP controller is in  
the Shift-DR state. The ID register has a vendor code and other  
information described in Identification Register Definitions on  
page 19.  
Test Data Out (TDO)  
The TDO output pin is used to serially clock data out from the  
registers. The output is active, depending upon the current state  
of the TAP state machine (see Instruction Codes on page 19).  
The output changes on the falling edge of TCK. TDO is  
connected to the least significant bit (LSB) of any register.  
TAP Instruction Set  
Performing a TAP Reset  
Eight different instructions are possible with the three-bit  
instruction register. All combinations are listed in Instruction  
Codes on page 19. Three of these instructions are listed as  
RESERVED and must not be used. The other five instructions  
are described in this section in detail.  
A reset is performed by forcing TMS HIGH (VDD) for five rising  
edges of TCK. This reset does not affect the operation of the  
SRAM and can be performed while the SRAM is operating. At  
power up, the TAP is reset internally to ensure that TDO comes  
up in a high Z state.  
Instructions are loaded into the TAP controller during the Shift-IR  
state when the instruction register is placed between TDI and  
TDO. During this state, instructions are shifted through the  
instruction register through the TDI and TDO pins. To execute  
the instruction after it is shifted in, the TAP controller must be  
moved into the Update-IR state.  
TAP Registers  
Registers are connected between the TDI and TDO pins to scan  
the data in and out of the SRAM test circuitry. Only one register  
can be selected at a time through the instruction registers. Data  
is serially loaded into the TDI pin on the rising edge of TCK. Data  
is output on the TDO pin on the falling edge of TCK.  
Document Number: 001-60007 Rev. *H  
Page 13 of 32  
CYRS1543AV18  
CYRS1545AV18  
IDCODE  
PRELOAD places an initial data pattern at the latched parallel  
outputs of the boundary scan register cells before the selection  
of another boundary scan test operation.  
The IDCODE instruction loads a vendor-specific, 32-bit code into  
the instruction register. It also places the instruction register  
between the TDI and TDO pins and shifts the IDCODE out of the  
device when the TAP controller enters the Shift-DR state. The  
IDCODE instruction is loaded into the instruction register at  
power up or whenever the TAP controller is supplied a  
Test-Logic-Reset state.  
The shifting of data for the SAMPLE and PRELOAD phases can  
occur concurrently when required, that is, while the data  
captured is shifted out, the preloaded data can be shifted in.  
BYPASS  
When the BYPASS instruction is loaded in the instruction register  
and the TAP is placed in a Shift-DR state, the bypass register is  
placed between the TDI and TDO pins. The advantage of the  
BYPASS instruction is that it shortens the boundary scan path  
when multiple devices are connected together on a board.  
SAMPLE Z  
The SAMPLE Z instruction connects the boundary scan register  
between the TDI and TDO pins when the TAP controller is in a  
Shift-DR state. The SAMPLE Z command puts the output bus  
into a high Z state until the next command is supplied during the  
Update IR state.  
EXTEST  
The EXTEST instruction drives the preloaded data out through  
the system output pins. This instruction also connects the  
boundary scan register for serial access between the TDI and  
TDO in the Shift-DR controller state.  
SAMPLE/PRELOAD  
SAMPLE/PRELOAD is an 1149.1 mandatory instruction. When  
the SAMPLE/PRELOAD instructions are loaded into the  
instruction register and the TAP controller is in the Capture-DR  
state, a snapshot of data on the input and output pins is captured  
in the boundary scan register.  
EXTEST OUTPUT BUS TRISTATE  
IEEE Standard 1149.1 mandates that the TAP controller be able  
to put the output bus into a tristate mode.  
You must be aware that the TAP controller clock only operates  
at a frequency up to 20 MHz, while the SRAM clock operates  
more than an order of magnitude faster. Because there is a large  
difference in the clock frequencies, it is possible that during the  
Capture-DR state, an input or output undergoes a transition. The  
TAP may then try to capture a signal while in transition  
(metastable state). This does not harm the device, but there is  
no guarantee as to the value that is captured. Repeatable results  
may not be possible.  
The boundary scan register has a special bit located at bit #108.  
When this scan cell, called the “extest output bus tristate,” is  
latched into the preload register during the Update-DR state in  
the TAP controller, it directly controls the state of the output  
(Q-bus) pins, when the EXTEST is entered as the current  
instruction. When HIGH, it enables the output buffers to drive the  
output bus. When LOW, this bit places the output bus into a  
high Z condition.  
To guarantee that the boundary scan register captures the  
correct value of a signal, the SRAM signal must be stabilized  
long enough to meet the TAP controller’s capture setup plus hold  
times (tCS and tCH). The SRAM clock input might not be captured  
correctly if there is no way in a design to stop (or slow) the clock  
during a SAMPLE/PRELOAD instruction. If this is an issue, it is  
still possible to capture all other signals and simply ignore the  
value of the K and K captured in the boundary scan register.  
This bit can be set by entering the SAMPLE/PRELOAD or  
EXTEST command, and then shifting the desired bit into that cell,  
during the Shift-DR state. During Update-DR, the value loaded  
into that shift-register cell latches into the preload register. When  
the EXTEST instruction is entered, this bit directly controls the  
output Q-bus pins. Note that this bit is preset HIGH to enable the  
output when the device is powered up, and also when the TAP  
controller is in the Test-Logic-Reset state.  
After the data is captured, it is possible to shift out the data by  
putting the TAP into the Shift-DR state. This places the boundary  
scan register between the TDI and TDO pins.  
Reserved  
These instructions are not implemented but are reserved for  
future use. Do not use these instructions.  
Document Number: 001-60007 Rev. *H  
Page 14 of 32  
CYRS1543AV18  
CYRS1545AV18  
TAP Controller State Diagram  
The state diagram for the TAP controller follows. [13]  
TEST-LOGIC  
1
RESET  
0
1
1
1
SELECT  
TEST-LOGIC/  
SELECT  
0
IR-SCAN  
IDLE  
DR-SCAN  
0
0
1
1
CAPTURE-DR  
0
CAPTURE-IR  
0
0
0
SHIFT-DR  
1
SHIFT-IR  
1
1
0
1
EXIT1-DR  
0
EXIT1-IR  
0
0
PAUSE-DR  
1
PAUSE-IR  
1
0
0
EXIT2-DR  
1
EXIT2-IR  
1
UPDATE-IR  
0
UPDATE-DR  
1
1
0
Note  
13. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.  
Document Number: 001-60007 Rev. *H  
Page 15 of 32  
CYRS1543AV18  
CYRS1545AV18  
TAP Controller Block Diagram  
0
Bypass Register  
2
1
1
1
0
0
0
Selection  
TDI  
Selection  
TDO  
Instruction Register  
Circuitry  
Circuitry  
31 30  
29  
.
.
2
Identification Register  
.
108  
.
.
.
2
Boundary Scan Register  
TCK  
TMS  
TAP Controller  
TAP Electrical Characteristics  
Over the Operating Range  
Parameter [14, 15, 16]  
Description  
Output HIGH voltage  
Output HIGH voltage  
Output LOW voltage  
Output LOW voltage  
Input HIGH voltage  
Input LOW voltage  
Test Conditions  
IOH =2.0 mA  
Min  
1.4  
1.6  
Max  
Unit  
V
VOH1  
VOH2  
VOL1  
VOL2  
VIH  
IOH =100 A  
IOL = 2.0 mA  
IOL = 100 A  
V
0.4  
0.2  
V
V
0.65 × VDD VDD + 0.3  
V
VIL  
–0.3  
–5  
0.35 × VDD  
5
V
IX  
Input and output load current  
GND VI VDD  
A  
Notes  
14. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in Electrical Characteristics on page 22.  
15. Overshoot: V < V + 0.85 V (Pulse width less than t /2), Undershoot: V /2).  
> 1.5 V (Pulse width less than t  
CYC  
IH(AC)  
DDQ  
CYC  
IL(AC)  
16. All Voltage referenced to Ground.  
Document Number: 001-60007 Rev. *H  
Page 16 of 32  
CYRS1543AV18  
CYRS1545AV18  
TAP AC Switching Characteristics  
Over the Operating Range  
Parameter [17, 18]  
Description  
Min  
50  
Max  
Unit  
ns  
tTCYC  
TCK clock cycle time  
TCK clock frequency  
TCK clock HIGH  
tTF  
20  
MHz  
ns  
tTH  
20  
20  
tTL  
TCK clock LOW  
ns  
Setup Times  
tTMSS  
tTDIS  
TMS setup to TCK clock rise  
TDI setup to TCK clock rise  
Capture setup to TCK rise  
5
5
5
ns  
ns  
ns  
tCS  
Hold Times  
tTMSH  
tTDIH  
TMS hold after TCK clock rise  
TDI hold after clock rise  
5
5
5
ns  
ns  
ns  
tCH  
Capture hold after clock rise  
Output Times  
tTDOV  
tTDOX  
TCK clock LOW to TDO valid  
TCK clock LOW to TDO invalid  
0
10  
ns  
ns  
Notes  
17. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.  
CS  
CH  
18. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.  
R
F
Document Number: 001-60007 Rev. *H  
Page 17 of 32  
CYRS1543AV18  
CYRS1545AV18  
TAP Timing and Test Conditions  
Figure 3 shows the TAP timing and test conditions. [19]  
Figure 3. TAP Timing and Test Conditions  
0.9 V  
50  
ALL INPUT PULSES  
1.8 V  
0.9 V  
TDO  
0 V  
Z = 50  
0
C = 20 pF  
L
t
TL  
t
TH  
GND  
(a)  
Test Clock  
TCK  
t
TCYC  
t
TMSH  
t
TMSS  
Test Mode Select  
TMS  
t
TDIS  
t
TDIH  
Test Data In  
TDI  
Test Data Out  
TDO  
t
TDOV  
t
TDOX  
Note  
19. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.  
R
F
Document Number: 001-60007 Rev. *H  
Page 18 of 32  
CYRS1543AV18  
CYRS1545AV18  
Identification Register Definitions  
Value  
Instruction Field  
Description  
CYRS1543AV18  
CYRS1545AV18  
000  
Revision number (31:29)  
Cypress device ID (28:12)  
Cypress JEDEC ID (11:1)  
000  
Version number.  
11010010101010100  
00000110100  
11010010101100100  
00000110100  
Defines the type of SRAM.  
Allows unique identification of  
SRAM vendor.  
ID register presence (0)  
1
1
Indicates the presence of an ID  
register.  
Scan Register Sizes  
Register Name  
Bit Size  
Instruction  
Bypass  
3
1
ID  
32  
109  
Boundary scan  
Instruction Codes  
Instruction  
EXTEST  
Code  
000  
Description  
Captures the input and output ring contents.  
IDCODE  
001  
Loads the ID register with the vendor ID code and places the register between TDI and TDO.  
This operation does not affect SRAM operation.  
SAMPLE Z  
010  
Captures the input and output contents. Places the boundary scan register between TDI and  
TDO. Forces all SRAM output drivers to a high Z state.  
RESERVED  
011  
100  
Do Not Use: This instruction is reserved for future use.  
SAMPLE/PRELOAD  
Captures the input and output ring contents. Places the boundary scan register between TDI  
and TDO. Does not affect the SRAM operation.  
RESERVED  
RESERVED  
BYPASS  
101  
110  
111  
Do Not Use: This instruction is reserved for future use.  
Do Not Use: This instruction is reserved for future use.  
Places the bypass register between TDI and TDO. This operation does not affect SRAM  
operation.  
Document Number: 001-60007 Rev. *H  
Page 19 of 32  
CYRS1543AV18  
CYRS1545AV18  
Boundary Scan Order  
Bit #  
0
Bump ID  
6R  
Bit #  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
Bump ID  
10G  
9G  
Bit #  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
Bump ID  
6A  
Bit #  
84  
Bump ID  
1J  
1
6P  
5B  
5A  
85  
2J  
2
6N  
11F  
11G  
9F  
86  
3K  
3
7P  
4A  
87  
3J  
4
7N  
5C  
4B  
88  
2K  
5
7R  
10F  
11E  
10E  
10D  
9E  
89  
1K  
6
8R  
3A  
90  
2L  
7
8P  
2A  
91  
3L  
8
9R  
1A  
92  
1M  
1L  
9
11P  
10P  
10N  
9P  
2B  
93  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
10C  
11D  
9C  
3B  
94  
3N  
1C  
1B  
95  
3M  
1N  
96  
10M  
11N  
9M  
9D  
3D  
3C  
1D  
2C  
3E  
97  
2M  
3P  
11B  
11C  
9B  
98  
99  
2N  
9N  
100  
101  
102  
103  
104  
105  
106  
107  
108  
2P  
11L  
11M  
9L  
10B  
11A  
10A  
9A  
1P  
2D  
2E  
3R  
4R  
10L  
11 K  
10K  
9J  
1E  
4P  
8B  
2F  
5P  
7C  
3F  
5N  
6C  
1G  
1F  
5R  
9K  
8A  
Internal  
10J  
11J  
11H  
7A  
3G  
2G  
1H  
7B  
6B  
Document Number: 001-60007 Rev. *H  
Page 20 of 32  
CYRS1543AV18  
CYRS1545AV18  
DLL Constraints  
Power Up Sequence in QDR II+ SRAM  
DLL uses K clock as its synchronizing input. The input must  
have low phase jitter, which is specified as tKC Var  
QDR II+ SRAMs must be powered up and initialized in a  
predefined manner to prevent undefined operations.  
.
The DLL functions at frequencies down to 120 MHz.  
Power Up Sequence  
If the input clock is unstable and the DLL is enabled, then the  
DLL may lock onto an incorrect frequency, causing unstable  
SRAM behavior. To avoid this, provide 10240 cycles stable  
clock to relock to the desired clock frequency.  
Apply power and drive DOFF either HIGH or LOW (All other  
inputs can be HIGH or LOW).  
Apply VDD before VDDQ  
.
Apply VDDQ before VREF or at the same time as VREF  
.
Drive DOFF HIGH.  
Provide stable DOFF (HIGH), power and clock (K, K) for 10240  
cycles to lock the DLL.  
Figure 4. Power Up Waveforms  
K
K
Start Normal  
Operation  
Unstable Clock  
> 10240 Stable Clock  
Clock Start (Clock Starts after V /V  
DD DDQ  
is Stable)  
V
/V  
+
V /V Stable (< 0.1V DC per 50 ns)  
DD DDQ  
DD DDQ  
Fix HIGH (tie to V  
DDQ  
)
DOFF  
Document Number: 001-60007 Rev. *H  
Page 21 of 32  
CYRS1543AV18  
CYRS1545AV18  
DC input voltage [20] ........................... –0.5 V to VDD + 0.3 V  
Current into outputs (LOW) ........................................ 20 mA  
Maximum Ratings  
Exceeding maximum ratings may impair the useful life of the  
device. These user guidelines are not tested.  
Static discharge voltage  
(MIL-STD-883, M. 3015) ........................................ > 2001 V  
Storage temperature ................................ –65 °C to +150 °C  
Case temperature under power ............... –55 °C to +125 °C  
Junction temperature under power .......... –55 °C to +155 °C  
Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V  
Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD  
DC applied to outputs in high Z ........0.5 V to VDDQ + 0.3 V  
Latch up current .................................................... > 200 mA  
Operating Range  
Case Temperature  
[21]  
[21]  
Range  
(Tc)  
VDD  
VDDQ  
Military  
–55 °C to +125 °C 1.8 ± 0.1 V 1.4 V to VDD  
Electrical Characteristics  
Over the Operating Range  
DC Electrical Characteristics  
Over the Operating Range  
Parameter [22]  
VDD  
Description  
Power supply voltage  
I/O supply voltage  
Output High voltage  
Output Low voltage  
Output High voltage  
Output Low voltage  
Input High voltage  
Input Low voltage  
Test Conditions  
Min  
Typ  
1.8  
1.5  
Max  
1.9  
Unit  
V
1.7  
VDDQ  
VOH  
1.4  
VDD  
V
Note 23  
Note 24  
VDDQ/2 – 0.12  
VDDQ/2 + 0.12  
VDDQ/2 + 0.12  
VDDQ  
0.2  
V
VOL  
VDDQ/2 – 0.12  
V
VOH(LOW)  
VOL(LOW)  
VIH  
IOH =0.1 mA, nominal impedance  
VDDQ – 0.2  
V
IOL = 0.1 mA, nominal impedance  
VSS  
V
VREF + 0.1  
VDDQ + 0.3  
VREF – 0.1  
20  
V
VIL  
–0.3  
20  
20  
0.68  
V
IX  
Input leakage current  
GND VI VDDQ  
A  
A  
V
IOZ  
Output leakage current  
Input reference voltage [25] Typical Value = 0.75 V  
GND VI VDDQ, output disabled  
20  
VREF  
0.75  
0.95  
[21]  
IDD  
VDD operating supply  
VDD = Max,  
OUT = 0 mA,  
250 MHz (× 18)  
(× 36)  
1225  
mA  
I
1225  
TJ = 125 °C  
f = fMAX = 1/tCYC  
200 MHz (× 18)  
(× 36)  
1050  
mA  
mA  
mA  
1050  
ISB1  
Automatic power down  
current  
Max VDD  
,
250 MHz (× 18)  
(× 36)  
510  
Both Ports Deselected,  
510  
VIN VIH or VIN VIL,  
f = fMAX = 1/tCYC  
TJ = 125 °C  
,
200 MHz (× 18)  
(× 36)  
475  
475  
Inputs Static  
Notes  
20. Overshoot: V  
21. Power up: Assumes a linear ramp from 0 V to V  
< V  
+ 0.85 V (Pulse width less than t  
/2), Undershoot: V  
> 1.5 V (Pulse width less than t  
/2).  
CYC  
IH(AC)  
DDQ  
CYC  
IL(AC)  
within 200 ms. During this time V < V and V  
< V  
.
DD  
DD(min)  
IH  
DD  
DDQ  
22. All Voltage referenced to Ground.  
23. Output are impedance controlled. I = (V  
/2)/(RQ/5) for values of 175 < RQ < 350 .  
OH  
DDQ  
24. Output are impedance controlled. I = (V  
/2)/(RQ/5) for values of 175 < RQ < 350 .  
OL  
DDQ  
25. V  
= 0.68 V or 0.46 V  
, whichever is larger, V  
= 0.95 V or 0.54 V  
, whichever is smaller.  
DDQ  
REF(min)  
DDQ  
REF(max)  
26. The operation current is calculated with concurrent read and write cycles.  
Document Number: 001-60007 Rev. *H  
Page 22 of 32  
CYRS1543AV18  
CYRS1545AV18  
AC Electrical Characteristics  
Over the Operating Range  
Parameter [27, 28]  
Description  
Test Conditions  
Min  
VREF + 0.2  
Typ  
Max  
Unit  
V
VIH  
VIL  
Input High voltage  
Input Low voltage  
VREF – 0.2  
V
Radiation Performance  
Parameter  
Test Conditions  
TA = 25 °C, VDD = VDDQ = 1.8 V  
Limits  
Unit  
Total dose  
300 Krad  
Rads(Si) Co60  
Upsets/bit-day  
Rads(Si)/s  
Soft error rate  
TA = 25 °C to 125 °C, VDD = VDDQ = 1.8 V w/ EDAC  
1.0 × 10^-10  
2.0 × 109  
Transient dose  
rate upset  
Pulse Width (FWHM) = 50 ns, X-Ray, TC = 25 °C, VDD = VDDQ = 1.8 V  
Neutron fluence 1 MeV equivalent energy, Unbiased TA = 25 C  
2e14  
110  
N/cm2  
MeVcm2/mg  
Latch up  
immunity  
TA = 125 °C, VDD = VDDQ = 1.9 V  
Capacitance  
Parameter [29]  
Description  
Test Conditions  
Max  
10  
Unit  
CIN  
Input capacitance  
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V  
pF  
pF  
pF  
CCLK  
CO  
Clock input capacitance  
Output capacitance  
10  
10  
Thermal Resistance  
165-ballCCGA  
Package  
Parameter [29]  
Description  
Test Conditions  
Unit  
JC  
Thermal resistance  
(Junction to case)  
Test conditions follow standard test methods and procedures  
for measuring thermal impedance, in accordance with  
EIA/JESD51.  
8.9  
°C/W  
Notes  
27. Overshoot: V  
28. Power up: Assumes a linear ramp from 0 V to V  
< V  
+ 0.85 V (Pulse width less than t  
/2), Undershoot: V  
> 1.5 V (Pulse width less than t  
/2).  
CYC  
IH(AC)  
DDQ  
CYC  
IL(AC)  
within 200 ms. During this time V < V and V  
< V  
.
DD  
DD(min)  
IH  
DD  
DDQ  
29. Tested initially and after any design or process change that may affect these parameters.  
Document Number: 001-60007 Rev. *H  
Page 23 of 32  
CYRS1543AV18  
CYRS1545AV18  
AC Test Loads and Waveforms  
Figure 5. AC Test Loads and Waveforms  
VREF = 0.75 V  
0.75 V  
VREF  
VREF  
0.75 V  
R = 50   
OUTPUT  
[30]  
ALL INPUT PULSES  
1.25 V  
Z = 50   
0
OUTPUT  
Device  
R = 50   
L
0.75 V  
Under  
Device  
Under  
0.25 V  
Test  
5 pF  
VREF = 0.75 V  
Slew Rate = 2 V/ns  
ZQ  
Test  
ZQ  
RQ =  
RQ =  
250  
(b)  
250  
INCLUDING  
JIG AND  
SCOPE  
(a)  
Note  
30. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V  
= 1.5 V, input  
DDQ  
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of Figure 5.  
OL OH  
Document Number: 001-60007 Rev. *H  
Page 24 of 32  
CYRS1543AV18  
CYRS1545AV18  
Switching Characteristics  
Over the Operating Range  
Parameters [31, 32]  
250 MHz  
200 MHz  
Min Max  
Description  
VDD(typical) to the first access [33]  
Unit  
Cypress Consortium  
Parameter Parameter  
Min  
Max  
tPOWER  
tCYC  
tKH  
1
8.4  
1
ms  
ns  
ns  
ns  
ns  
tKHKH  
tKHKL  
tKLKH  
tKHKH  
K clock cycle time  
4.0  
1.6  
1.6  
1.8  
5.0  
2.0  
2.0  
2.2  
8.4  
Input clock (K/K) HIGH  
Input clock (K/K) LOW  
tKL  
tKHKH  
K clock rise to K clock rise (rising edge to rising edge)  
Setup Times  
tSA  
tAVKH  
Address setup to K clock rise  
0.5  
0.5  
0.6  
0.6  
0.6  
0.6  
ns  
ns  
ns  
ns  
tSC  
tIVKH  
tIVKH  
tDVKH  
Control setup to K clock rise  
(RPS, WPS)  
tSCDDR  
DDR control setup to clock (K/K) rise (BWS0, BWS1, BWS2, BWS3) 0.5  
[34]  
tSD  
D[X:0] setup to clock (K/K) rise  
0.5  
Hold Times  
tHA  
tKHAX  
tKHIX  
tKHIX  
tKHDX  
Address hold after K clock rise  
Control hold after K clock rise  
0.5  
0.5  
0.6  
0.6  
0.6  
0.6  
ns  
ns  
ns  
ns  
tHC  
(RPS, WPS)  
tHCDDR  
tHD  
DDR control hold after clock (K/K) rise (BWS0, BWS1, BWS2, BWS3) 0.5  
D[X:0] hold after clock (K/K) rise  
0.5  
Output Times  
tCO  
tCHQV  
–0.7  
0.7  
–0.7  
0.7  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
K/K clock rise to data valid  
tDOH  
tCHQX  
Data output hold after output K/K clock rise (Active to active)  
K/K clock rise to echo clock valid  
Echo clock hold after C/C clock rise  
Echo clock high to data valid  
tCCQO  
tCQOH  
tCQD  
tCHCQV  
tCHCQX  
tCQHQV  
tCQHQX  
tCQHCQL  
tCQHCQH  
tCHQZ  
0.7  
0.7  
–0.7  
–0.7  
0.5  
0.5  
tCQDOH  
tCQH  
tCQHCQH  
tCHZ  
Echo clock high to data invalid  
Output clock (CQ/CQ) HIGH [34]  
–0.30  
1.55  
1.55  
–0.35  
1.95  
1.95  
[34]  
CQ clock rise to CQ clock rise  
(rising edge to rising edge)  
Clock (K/K) rise to high Z (Active to high Z) [35, 36]  
Clock (K/K) rise to low Z [35, 36]  
Echo Clock High to QVLD Valid [37]  
0.45  
0.45  
tCLZ  
tCHQX1  
tCQHQVLD  
–0.45  
–0.5  
–0.45  
–0.5  
tQVLD  
0.5  
0.5  
DLL Timing  
tKC Var  
tKC lock  
tKC Reset  
tKC Var  
Clock phase jitter  
DLL lock time (K)  
K static to DLL reset  
0.2  
0.2  
ns  
Cycles  
ns  
tKC lock  
tKC Reset  
10240  
30  
10240  
30  
Notes  
31. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , V  
= 1.5 V, input  
DDQ  
pulse levels of 0.25 V to 1.25 V, and output loading of the specified I /I and load capacitance shown in (a) of Figure 5 on page 24.  
OL OH  
32. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being  
operated and outputs data with the output timings of that frequency range.  
33. This part has a voltage regulator internally; t  
is the time that the power must be supplied above V  
initially before a read or write operation can be initiated.  
DD(minimum)  
POWER  
34. These parameters are extrapolated from the input timing parameters (t  
– 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t  
) is already  
KHKH  
KC Var  
included in the t  
). These parameters are only guaranteed by design and are not tested in production  
KHKH  
35. t  
, t  
, are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 24. Transition is measured ± 100 mV from steady-state voltage.  
CHZ CLZ  
36. At any voltage and temperature t  
is less than t  
and t  
less than t  
.
CHZ  
CLZ  
CHZ  
CO  
37. t  
Spec is applicable for both rising and falling edges of QVLD signal.  
QVLD  
Document Number: 001-60007 Rev. *H  
Page 25 of 32  
CYRS1543AV18  
CYRS1545AV18  
Switching Waveforms  
Figure 6. Read/Write/Deselect Sequence [38, 39, 40]  
NOP  
1
READ  
2
WRITE  
3
READ  
4
WRITE  
5
NOP  
6
7
8
K
t
t
CYC  
t
t
KH  
KL  
KHKH  
K
RPS  
t
t
SC HC  
t
t
SC  
HC  
WPS  
A
A0  
A1  
A2  
A3  
t
t
HD  
t
t
HD  
SA HA  
t
SD  
t
SD  
D10  
D11  
D12  
D13  
D30  
D31  
D32  
D33  
D
t
QVLD  
t
QVLD  
QVLD  
t
DOH  
t
t
CQDOH  
CO  
t
t
CHZ  
t
CLZ  
CQD  
Q
Q22  
Q01  
Q02  
Q23  
Q00  
t
Q03 Q20 Q21  
(Read Latency = 2.0 Cycles)  
CCQO  
CQOH  
CQ  
CQ  
CCQO  
t
t
t
CQHCQH  
CQH  
CQOH  
DON’T CARE  
UNDEFINED  
Notes  
38. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.  
39. Outputs are disabled (high Z) one clock cycle after a NOP.  
40. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note  
applies to Figure 6.  
Document Number: 001-60007 Rev. *H  
Page 26 of 32  
CYRS1543AV18  
CYRS1545AV18  
Ordering Information  
The following table contains only the parts that are currently available. If you do not see what you are looking for (× 18 option), contact  
your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product  
summary page at http://www.cypress.com/products.  
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office  
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.  
Speed  
(MHz)  
Package  
Diagram  
Operating  
Range  
Ordering Code  
Description  
Package Type  
250 CYRS1543AV18-250GCMB 72M QDR II+, × 18,  
Burst of 4  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
001-58969 165-ball CCGA (21 × 25 × 2.83 mm)  
N/A  
Military  
Military  
Military  
Military  
Military  
Military  
Military  
250 CYRS1545AV18-250GCMB 72M QDR II+, × 36,  
Burst of 4  
250 CYPT1543AV18-250GCMB 72M QDR II+, × 18,  
Burst of 4, Prototype  
250 CYPT1545AV18-250GCMB 72M QDR II+, × 36,  
Burst of 4, Prototype  
250 5962F1120102QXA  
72M QDR II+, × 18,  
Burst of 4, DLAM Part  
250 5962F1120202QXA  
72M QDR II+, × 36,  
Burst of 4, DLAM Part  
250 CYRS1543AV18-1XWI  
72M QDR II+ die  
Ordering Code Definitions  
-
250  
GC M B  
CY  
154X A V18  
XX  
Burn-in  
Thermal Rating: M = Military  
Package Type: 165-ball CCGA  
Speed Grade: 250 MHz  
Core Voltage: 1.8 V  
Die Revision  
Part Number Identifier: Density, Organization, Burst  
154X = 1543 or 1545  
Marketing Code: XX = RS or PT  
RS = RadStop, PT = Prototype  
Company ID: CY = Cypress  
Document Number: 001-60007 Rev. *H  
Page 27 of 32  
CYRS1543AV18  
CYRS1545AV18  
Package Diagram  
Figure 7. 165-ball Ceramic Column Grid Array (CCGA) (21 × 25 mm) Package Outline, 001-58969  
001-58969 *C  
Document Number: 001-60007 Rev. *H  
Page 28 of 32  
CYRS1543AV18  
CYRS1545AV18  
Acronyms  
Document Conventions  
Units of Measure  
Acronym  
Description  
BWS  
CCGA  
DED  
DLL  
byte write select  
ceramic column grid array  
Symbol  
°C  
Unit of Measure  
degree Celsius  
kiloradian  
double error detection  
delay lock loop  
Krad  
MHz  
µA  
DDR  
DSCC  
EDAC  
HSTL  
I/O  
double data rate  
megahertz  
microampere  
microfarad  
microsecond  
milliampere  
millimeter  
defense supply center columbus  
error detection and correction  
high speed transceiver logic  
input/output  
µF  
µs  
mA  
mm  
ms  
JTAG  
LSB  
Joint Test Action Group  
least significant bit  
logical single-bit upsets  
logical multi-bit upsets  
most significant bit  
percent defect allowable  
particle impact noise detection  
percent defective allowable  
quad data rate  
LSBU  
LMBU  
MSB  
PDA  
PIND  
PDA  
QDR  
RPS  
SEC  
SEL  
millisecond  
mV  
N/cm2  
ns  
millivolt  
Neutron particles fluence per cm2 area  
nanosecond  
nanometer  
ohm  
nm  
read port select  
%
percent  
single error correction  
single event latch up  
static random access memory  
test access port  
pF  
picofarad  
picosecond  
ps  
SRAM  
TAP  
Rads(Si)  
unit of absorbed radiation energy from ionizing  
radiation per kg of material.  
(1 rad(Si)) = 10 mGy = 10 – 2 J/kg  
TCK  
test clock  
TDI  
test data in  
V
volt  
TDO  
TMS  
WPS  
test data out  
W
watt  
test mode select  
write port select  
Document Number: 001-60007 Rev. *H  
Page 29 of 32  
CYRS1543AV18  
CYRS1545AV18  
Glossary  
Total Dose  
Heavy Ion  
LET  
Permanent device damage due to ions over device life  
Instantaneous device latch up due to single ion  
Linear energy transfer (measured in MeVcm2)  
Krad  
Unit of measurement to determine device life in radiation environments.  
Permanent device damage due to energetic neutrons or protons  
Neutron  
Prompt Dose  
Data loss of permanent device damage due to X-rays and gamma rays < 20 ns  
Hermetic ceramic 165-column package. Columns attached by Six Sigma  
165-ball Ceramic Column Grid  
Array  
RadStop Technology  
DLAM  
Cypress's patented Rad Hard design methodology  
Defense Logistics Agency Land and Maritime  
LSBU  
Logical Single Bit Upset. Single bits in a single correction word are in error.  
Logical Multi Bit Upset. Multiple bits in a single correction word are in error.  
General electrical testing  
LMBU  
Group A  
Group B  
Mechanical - Dimensions, bond strength, solvents, die shear, solderability, lead integrity,  
seal, acceleration  
Group C  
Group D  
Life test - 1000 hours at 125 C  
Package related mechanical tests - shock, vibration, Accel, salt, seal, lead finish  
adhesion, lid torque, thermal shock, moisture resistance  
Group E  
Radiation testing  
Document Number: 001-60007 Rev. *H  
Page 30 of 32  
CYRS1543AV18  
CYRS1545AV18  
Document History Page  
Document Title: CYRS1543AV18/CYRS1545AV18, 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™  
Technology  
Document Number: 001-60007  
Submission  
Date  
Orig. of  
Change  
Rev.  
ECN No.  
Description of Change  
**  
2940931  
3016545  
05/31/2010  
08/26/2010  
HRP  
HRP  
New data sheet.  
*A  
Changed part numbers from CYRS1513AV18, CYRS1515AV18 to reflect  
change to QDR II+ die.  
Updated Switching Characteristics (Updated minimum and maximum values  
for Setup Time, Hold Time parameters, and updated minimum and maximum  
values for tCO parameter under Output Time parameter).  
Updated Package Diagram.  
Added Units of Measure.  
*B  
3281455  
06/13/2011  
HRP  
Changed status from Advanced to Final.  
Updated Configurations (corrected typo).  
Updated Selection Guide.  
Updated DC Electrical Characteristics (maximum current limit values for the  
parameters IDD and ISB1 based on device characterization).  
Updated Radiation Performance (Limits of Radiation Data based on RHA  
qualification).  
Updated Thermal Resistance.  
Updated Switching Characteristics (Minimum and Maximum timing values for  
the parameters tCO, tDOH, tCCQO, tCQOH based on device characterization.  
Updated Ordering Information (Removed × 18 option from ordering table).  
Updated Package Diagram.  
Changed DLL lockup cycles from 2048 to 10240 throughout document.  
Updated in new template.  
*C  
*D  
3471321  
3524961  
12/21/2011  
02/14/2012  
HRP  
HRP  
Updated Identification Register Definitions (Replaced the value of Cypress  
device ID (28:12) from 11010011011010100 to 11010010101010100 for  
CYRS1543AV18 and replaced the value of Cypress device ID (28:12) from  
11010011011100100 to 11010010101100100 for CYRS1545AV18).  
Updated Prototyping under Radiation Performance (Added two devices).  
Updated Selection Guide (Removed 200 MHz option).  
Updated Application Example.  
Updated Truth Table.  
Updated Maximum Ratings.  
Updated Operating Range.  
Updated Radiation Performance.  
Updated Capacitance.  
Updated Thermal Resistance.  
Updated Switching Characteristics.  
*E  
3537277  
02/29/2012  
HRP  
Updated Radiation Data under Radiation Performance.  
Updated  
Ordering  
Information  
(Added  
the  
part  
numbers  
CYRS1543AV18-250GCMB,  
CYPT1545AV18-250GCMB,  
CYRS1543AV18-1XWI).  
CYPT1543AV18-250GCMB,  
5962F1120203VXA  
and  
*F  
3617759  
3640834  
05/15/2012  
06/08/2012  
HRP  
HRP  
Updated Ordering Information (Added part 5962F1120103VXA).  
Updated Glossary.  
*G  
Updated Radiation Performance (Updated Prototyping).  
Renamed the section Class V Flow as Manufacturing Flow.  
Updated Glossary.  
*H  
3857750  
01/04/2013  
HRP  
Updated Ordering Information (Updated part numbers).  
Document Number: 001-60007 Rev. *H  
Page 31 of 32  
CYRS1543AV18  
CYRS1545AV18  
Sales, Solutions, and Legal Information  
Worldwide Sales and Design Support  
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office  
closest to you, visit us at Cypress Locations.  
Products  
PSoC Solutions  
Automotive  
cypress.com/go/automotive  
cypress.com/go/clocks  
cypress.com/go/interface  
cypress.com/go/powerpsoc  
cypress.com/go/plc  
psoc.cypress.com/solutions  
PSoC 1 | PSoC 3 | PSoC 5  
Clocks & Buffers  
Interface  
Lighting & Power Control  
Memory  
cypress.com/go/memory  
cypress.com/go/image  
cypress.com/go/psoc  
Optical & Image Sensing  
PSoC  
Touch Sensing  
USB Controllers  
Wireless/RF  
cypress.com/go/touch  
cypress.com/go/USB  
cypress.com/go/wireless  
© Cypress Semiconductor Corporation, 2010-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of  
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for  
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as  
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems  
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),  
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,  
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress  
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without  
the express written permission of Cypress.  
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES  
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not  
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where  
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer  
assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Use may be limited by and subject to the applicable Cypress software license agreement.  
Document Number: 001-60007 Rev. *H  
Revised January 4, 2013  
Page 32 of 32  
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All products and company names mentioned in this document  
may be the trademarks of their respective holders.  
厂商 型号 描述 页数 下载

KYOCERA AVX

CYR10 玻璃电容器CYR10 , 15 (可靠性指标) M23269 / 01 , 02 ( QPL至MIL-PRF- 23269 )[ Glass Capacitors CYR10, 15 (Established Reliability) M23269/01, 02 (QPL to MIL-PRF-23269) ] 2 页

FOXCONN

CYR2-AP03MJ04 [ Interconnection Device ] 1 页

KYOCERA AVX

CYR51 玻璃电容器CYR51 , 52 , 53 (可靠性指标) M23269 / 10 ( QPL至MIL-PRF- 23269 )[ Glass Capacitors CYR51, 52, 53 (Established Reliability) M23269/10 (QPL to MIL-PRF-23269) ] 2 页

KYOCERA AVX

CYR52 玻璃电容器CYR51 , 52 , 53 (可靠性指标) M23269 / 10 ( QPL至MIL-PRF- 23269 )[ Glass Capacitors CYR51, 52, 53 (Established Reliability) M23269/10 (QPL to MIL-PRF-23269) ] 2 页

KYOCERA AVX

CYR53 玻璃电容器CYR51 , 52 , 53 (可靠性指标) M23269 / 10 ( QPL至MIL-PRF- 23269 )[ Glass Capacitors CYR51, 52, 53 (Established Reliability) M23269/10 (QPL to MIL-PRF-23269) ] 2 页

CYPRESS

CYRF69103 无线可编程片上低功耗[ Programmable Radio on Chip Low Power ] 73 页

CYPRESS

CYRF69103-40LFXC 无线可编程片上低功耗的16位自由运行定时器[ Programmable Radio on Chip Low Power 16-bit free running timer ] 68 页

CYPRESS

CYRF69103-40LTXC 无线可编程片上低功耗[ Programmable Radio on Chip Low Power ] 72 页

CYPRESS

CYRF69103A-40LFXC 无线可编程片上低功耗[ Programmable Radio on Chip Low Power ] 68 页

CYPRESS

CYRF69103_08 无线可编程片上低功耗[ Programmable Radio on Chip Low Power ] 65 页

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