4N70K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.4
A
Drain Current
Pulsed (Note 2)
IDM
17.6
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
120
mJ
mJ
V/ns
W
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
4.5
36
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
Operating Temperature
Storage Temperature
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJc
3.47
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
700
V
10 μA
Forward
Reverse
100
nA
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID = 250μA, Referenced to 25°C
-100
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
0.6
V/°С
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.6 2.8
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
70 90 pF
VDS = 25 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
8
11 pF
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-841.A
www.unisonic.com.tw
