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3SK263-5-TG-E

型号:

3SK263-5-TG-E

描述:

FM调谐器, VHF调谐器,高频功率放大器应用ER[ FM Tuner, VHF Tuner, High-Frequency Amplifi er Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

6 页

PDF大小:

492 K

Ordering number : EN4423C  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET (Dual Gate)  
FM Tuner, VHF Tuner,  
High-Frequency Amplier Applications  
3SK263  
Features  
Enhancement type  
Small noise gure  
Small cross modulation  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate1-to-Source Voltage  
Gate2-to-Source Voltage  
Drain Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
8
DS  
V
V
G1S  
V
8
V
G2S  
I
30  
200  
125  
mA  
mW  
D
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
D
Tch  
C
C
°
°
Tstg  
--55 to +125  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
7014A-006  
• Package  
: CP4  
• JEITA, JEDEC  
: SC-61, SC-82AB, SOT-143, SOT-343  
Minimum Packing Quantity : 3,000 pcs./reel  
2.9  
3SK263-5-TG-E  
0.1  
0.4  
Packing Type: TG  
Marking  
4
3
RJ  
2
1
0.6  
TG  
0.95 0.85  
1 : Drain  
Electrical Connection  
2 : Source  
3 : Gate1  
4 : Gate2  
1
3
4
SANYO : CP4  
2
http://www.sanyosemi.com/en/network/  
90512 TKIM/82599TH (KT)/20696YK/63094MT (KOTO) AX-9847 No.4423-1/6  
3SK263  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=0V, I =100  
Unit  
min  
max  
Drain-to-Source Voltage  
V
V
=0V, V  
G2S  
A
15  
0
V
V
μ
DS  
G1S  
D
Gate1-to-Source Cutoff Voltage  
Gate2-to-Source Cutoff Voltage  
Gate1-to-Source Leakage Current  
Gate2-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
Forward Transfer Admittance  
V
(off)  
(off)  
V
DS  
=6V, V  
=4V, I =100  
G2S D  
=6V, V =3V, I =100  
G1S D  
A
0.7  
1.3  
μ
μ
G1S  
V
V
DS  
A
0.1  
0.9  
1.6  
50  
V
G2S  
I
V
= 6V, V  
= 6V, V  
G2S  
=V =0V  
G2S DS  
nA  
nA  
mA  
mS  
pF  
pF  
dB  
dB  
G1SS  
G1S  
I
V
=V =0V  
G1S DS  
50  
G2SS  
I
V
=6V, V  
=1.5V, V  
G2S  
=4V  
2.5*  
24*  
DSX  
yfs  
DS G1S  
V
DS  
=6V, I =10mA, V  
G2S  
=4V, f=1kHz  
14  
2.7  
|
|
D
Input Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
V
DS  
=6V, f=1MHz, V  
G1S  
=0V, V =4V  
G2S  
Crss  
PG  
0.015  
21  
0.03  
2.2  
V
DS  
=6V, I =10mA, V  
G2S  
=4V, f=200MHz  
=4V, f=200MHz  
18  
D
Noise Figure  
NF  
V
DS  
=6V, I =10mA, V  
G2S  
1.1  
D
: The 3SK263 is classied by I  
as follows : (unit : mA)  
5 6  
*
DSX  
Rank  
4
I
2.5 to 6.0  
5.0 to 12.0  
10.0 to 24.0  
DSX  
PG, NF Specied Test Circult  
f=200MHz  
~20pF  
3
1
2
2
T
2
T
1000pF  
47pF  
4
OUT  
IN  
50Ω  
50Ω  
~20pF  
1
~20pF  
1
T
2
12Ω  
1000pF  
15kΩ  
V
G1S  
1000pF  
V
V
DS  
G2S  
L : 1mmØ enamel wire 10mmØ  
Ordering Information  
Device  
Package  
CP4  
Shipping  
memo  
3SK263-5-TG-E  
3,000pcs./reel  
Pb Free  
No.4423-2/6  
3SK263  
I
D
-- V  
DS  
I
-- V  
D G1S  
25  
20  
15  
10  
20  
16  
12  
V
=4.0V  
V
=6V  
G2S  
DS  
2.2V  
2.0V  
3.5V  
4.0V  
1.8V  
1.6V  
4.5V  
5.0V  
5.5V  
1.4V  
1.2V  
8
1.5V  
1.0V  
5
0
4
0
1.0V  
0.8V  
V
=0.6V  
G1S  
0.5V  
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
0
0
0
2
4
6
8
10  
Drain-to-Source Voltage, V  
-- V  
Gate1-to-Source Voltage, V  
G1S  
-- V  
ITR02875  
ITR02874  
DS  
I
D
-- V  
G2S  
| yfs | -- V  
G1S  
25  
20  
15  
10  
25  
20  
15  
V
=6V  
V
=6V  
DS  
DS  
f=1kHz  
4.5V  
5.0V  
5.5V  
10  
5
5
0
0.75V  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
ITR02877  
1
2
3
4
5
Gate2-to-Source Voltage, V  
-- V  
Gate1-to-Source Voltage, V  
-- V  
ITR02876  
G2S  
G1S  
Ciss -- V  
| yfs | -- I  
G2S  
D
25  
7
5
V
=6V  
: V  
V
=6V  
f=1kHz  
DS  
DS  
V
I
=4V  
G1S G2S  
=10mA  
D
20  
15  
f=1MHz  
5.5V  
5.0V  
4.5V  
3
2
10  
5
0
1.0  
5
10  
15  
20  
25  
ITR02878  
--1  
0
1
2
3
4
Gate2-to-Source Voltage, V  
-- V  
Drain Current, I -- mA  
D
ITR02879  
G2S  
P
-- Ta  
PG, NF -- V  
D
G2S  
240  
200  
160  
120  
80  
30  
20  
10  
4
V
V
I
=6V  
DS  
: V  
=4V  
G1S G2S  
=10mA  
D
PG  
f=200MHz  
3
2
NF  
0
1
0
40  
0
--10  
1
2
3
4
5
6
0
20  
40  
60  
80  
100  
120  
140  
Gate2-to-Source Voltage, V  
-- V  
Ambient Temperature, Ta -- °C  
ITR02880  
ITR02881  
G2S  
No.4423-3/6  
3SK263  
Embossed Taping Specication  
3SK263-5-TG-E  
No.4423-4/6  
3SK263  
Outline Drawing  
Land Pattern Example  
3SK263-5-TG-E  
Mass (g) Unit  
Unit: mm  
0.013  
mm  
* For reference  
1.9  
0.8  
1.2  
1.8  
No.4423-5/6  
3SK263  
Note on usage : Since the 3SK263 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of September, 2012. Specications and information herein are subject  
to change without notice.  
PS No.4423-6/6  
厂商 型号 描述 页数 下载

ETC

3SK101 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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