WSP10D150
Silicon Controlled Rectifiers
Features
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10A(2×5A),150V
VF(max)=0.72V(@TJ=125℃)
Low power loss,high efficiency
Common cathode structure
Guard ring for over voltage protection, High reliability
Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
VDRM
Parameter
Value
150
150
10
Units
Repetitive Peak reverse Voltage
V
V
A
VDC
Maximum DC blocking Voltage
RMS forward Current
IF(RMS)
Per diode
5
IF(AV)
Average forward current
A
Per device
10
IFSM
IRRM
Surge non repetitive for ward current
Repetitive peak reverse current
150
1
A
A
dv/dt
Critical rate of rise pf reverse voltage
10000
V/ns
TJ
Junction Temperature
Storage Temperature
175
°C
°C
TSTG
-40~150
Thermal Characteristics
Value
Typ
-
Symbol
Parameter
Units
Min
Max
RQJC
Thermal Resistance Junction to Case
-
2.2
℃/W
Rev.A May.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
