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IXGF25N250

型号：

IXGF25N250

描述：

高电压IGBT电容器放电应用[ High Voltage IGBT For Capacitor Discharge Applications ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

228 K

下载PDF手册
VCES = 2500V  
IC25 = 30A  
VCE(sat) ≤ 2.9V  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
IXGF25N250  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
V
1
2
TJ = 25°C to 150°C, RGE = 1MΩ  
5
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
ISOLATED TAB  
5 = Collector  
1 = Gate  
2 = Emitter  
IC25  
IC110  
ICM  
TC = 25°C  
30  
15  
A
A
A
TC = 110°C  
TC = 25°C, VGE = 20V, 1ms  
200  
SSOA  
V
GE= 20V, TVJ = 125°C, RG = 20Ω  
ICM = 240  
0.5 • VCES  
A
Features  
(RBSOA)  
Clamped Inductive Load  
TC = 25°C  
PC  
114  
W
ꢀ
UL Recognized Package  
Electrically Isolated Tab  
High Peak Current Capability  
Low Saturation Voltage  
MOS Gate Turn-On  
ꢀ
ꢀ
ꢀ
ꢀ
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
- Drive Simplicity  
ꢀ
ꢀ
Rugged NPT Structure  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120/4.5..27  
Nm/lbin.  
VISOL  
Weight  
50/60Hz, 1 minute  
2500  
5
V~  
g
Applications  
ꢀ
Capacitor Discharge  
Pulser Circuits  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250µA, VGE = 0V  
V
V
Advantages  
IC = 250µA, VCE = VGE  
5.0  
VCE = 0.8 • VCES, VGE = 0V, Note 2  
50 µA  
mA  
ꢀ
High Power Density  
Easy to Mount  
TJ = 125°C  
1
ꢀ
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 25A, VGE = 15V, Note 1  
IC = 75A  
2.9  
5.2  
V
V
DS99829B(05/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF25N250  
ISOPLUS i4-PakTM (HV) (IXGF) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VGE = 15V, VCE = 20V, Note 1  
16  
26  
S
A
IC(ON)  
240  
Cies  
Coes  
Cres  
2970  
98  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
36  
Qg  
75  
15  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tr  
td(off)  
tf  
68  
233  
209  
200  
ns  
ns  
ns  
ns  
Resistive Switching Times  
IC = 50A, VGE = 15V  
VCE = 1250V, RG = 5Ω  
RthJC  
RthCS  
RthJA  
1.10 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes: 1. Pulse Test, t < 300µs; Duty Cycle, d < 2%.  
2. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGF25N250  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
150  
135  
120  
105  
90  
250  
225  
200  
175  
150  
125  
100  
75  
VGE = 25V  
20V  
VGE = 25V  
20V  
15V  
10V  
15V  
10V  
75  
60  
45  
30  
50  
15  
25  
0
0
0
1
2
3
4
5
6
7
8
0
-50  
4
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 25V  
20V  
VGE = 15V  
I C = 150A  
15V  
10V  
I C = 100A  
I C = 50A  
60  
40  
20  
0
0
2
4
6
8
10  
12  
14  
16  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
10  
9
VGE = 15V  
TJ = - 40ºC  
25ºC  
125ºC  
8
I C = 150A  
7
6
I C = 100A  
60  
5
40  
4
I C = 50A  
20  
3
0
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
5
6
7
8
9
10  
11  
12  
13  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_25N250(5P-P528)4-21-08-E  
IXGF25N250  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
36  
33  
30  
27  
24  
21  
18  
15  
12  
9
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 1250V  
C = 50A  
I G = 10 mA  
I
25ºC  
125ºC  
6
4
6
2
3
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10000  
1000  
100  
280  
240  
200  
160  
120  
80  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 10Ω  
40  
C
dV / dt < 10V / ns  
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF25N250  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
680  
640  
600  
560  
520  
480  
440  
400  
360  
320  
280  
240  
200  
RG = 5ꢀ  
RG = 5ꢀ  
I C = 150A  
TJ = 125ºC  
VGE = 15V  
VGE = 15V  
V
CE = 1250V  
VCE = 1250V  
I C = 50A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
245  
240  
235  
230  
225  
220  
215  
210  
205  
200  
195  
190  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
700  
124  
680  
660  
640  
620  
600  
580  
560  
540  
520  
500  
480  
120  
116  
112  
108  
104  
100  
96  
t f  
t
d(off) - - - -  
RG = 5ꢀ, VGE = 15V  
I C = 150A  
I C = 50A, 150A  
V
CE = 1250V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
V
CE = 1250V  
I C = 150A, 50A  
92  
88  
I C = 50A  
84  
80  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
260  
225  
210  
195  
180  
165  
150  
135  
120  
105  
90  
260  
255  
250  
245  
240  
235  
230  
225  
220  
215  
210  
205  
200  
280  
265  
250  
235  
220  
205  
190  
175  
160  
145  
130  
115  
100  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
t f  
t
d(off) - - - -  
250  
240  
230  
220  
210  
200  
190  
180  
170  
RG = 5ꢀ, VGE = 15V  
V
CE = 1250V  
VCE = 1250V  
TJ = 25ºC  
TJ = 125ºC  
I C = 150A, 50A  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_25N250(5P-P528)4-21-08-E  
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