RoHS
CZT5401
SOT-223
CZT5401 TRANSISTOR (PNP)
FEATURES
Power dissipation
1. BASE
2. COLLECTOR
3. EMITTER
PCM:
1
W (Tamb=25℃)
Collector current
ICM: -0.6
Collector-base voltage
V(BR)CBO: -160
A
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-160
-150
-5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=-100µ A,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-10 µ A,IC=0
V
V
V
ICBO
IEBO
VCB=-100V,IE=0
-50
-50
nA
nA
Emitter cut-off current
VEB=-3V,IC=0
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
VCE=-5V,IC=-1mA
50
60
50
DC current gain
VCE=-5V,IC=-10mA
VCE=-5V,IC=-50mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-10V,IC=-10mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
240
-0.2
-0.5
-1
V
V
Collector-emitter saturation voltage
Base-emitter voltage
V
-1
V
Transition frequency
100
300
MHz
Collector output capacitance
Cob
6
pF
V
CE=-5V,Ic=-0.2mA,
WEJ ELECTRONIC CO.,LTD
Noise figure
NF
8
dB
f=10Hzto15.7KHZ,Rs=10Ω
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
