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IXGR120N60B

型号：

IXGR120N60B

描述：

HiPerFASTTM IGBT ISOPLUS247TM[ HiPerFASTTM IGBT ISOPLUS247TM ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

566 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS247TM  
IXGR 120N60B  
VCES = 600 V  
IC25 = 156 A  
VCE(sat) = 2.1 V  
(Electrically Isolated Back Surface)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
IL(RMS)  
TC = 25°C  
TC = 110°C  
External lead limit  
156  
102  
76  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
ICM  
TC = 25°C, 1 ms  
300  
A
A
* Patent pending  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 2.4 Ω  
I
= 200  
(RBSOA)  
CGlaE mped inductive load  
@C0M.8 VCES  
520  
PC  
TC = 25°C  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z DCB Isolated mounting tab  
z Meets TO-247AD package Outline  
z High current handling capability  
z Latest generation HDMOSTM process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z MOS Gate turn-on  
- drive simplicity  
VISOL  
50/60 Hz, RMS, t = 1minute leads-to-tab  
2500  
5
V
g
Weight  
Applications  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
Symbol  
BVCES  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z AC motor speed control  
IC = 1 mA, VGE = 0 V  
IC = 1 mA, VCE = VGE  
600  
2.5  
V
V
z DC servo and robot drives  
z DC choppers  
VGE(th)  
ICES  
5.5  
Advantages  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
TJJ = 150°C  
200 µA  
mA  
2
z Easy assembly  
z High power density  
IGES  
VCE = 0 V, VGE = 20 V  
400 nA  
2.1 V  
z Very fast switching speeds for high  
frequency applications  
VCE(sat)  
IC = 100A, VGE = 15 V (see note 1)  
© 2004 IXYS All rights reserved  
DS98744A(08/04)  
IXGR 120N60B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
IC = 60A; VCE = 10 V,  
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
50  
75  
S
Cies  
Coes  
Cres  
11000  
680  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
190  
Qg  
350  
72  
nC  
nC  
nC  
Qge  
Qgc  
IC = 100A, VGE = 15 V, VCE = 0.5 VCES  
131  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
td(on)  
tri  
60  
45  
ns  
ns  
Inductive load, TJ = 25°C  
4 no connection  
IC = 100A, VGE = 15 V  
VCE = 0.8 • VCES, RG = Roff = 2.4 Ω  
Eon  
td(off)  
tfi  
2.4  
mJ  
ns  
Dim.  
Millimeter  
Inches  
Min.  
Max. Min. Max.  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
200 360  
160 280  
A
4.83  
2.29  
1.91  
1.14  
1.91  
2.92  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
ns  
A12  
Eoff  
5.5  
9.6  
mJ  
b
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
b12  
td(on)  
tri  
60  
60  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 100A, VGE = 15 V  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
Eon  
td(off)  
tfi  
4.8  
290  
250  
8.7  
mJ  
ns  
VCE = 0.8 • VCES, RG = Roff = 2.4 Ω  
e
5.45 BSC  
.215 BSC  
.780 .800  
.150 .170  
L
19.81 20.32  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
L1  
3.81  
4.32  
ns  
Q
5.59  
6.20  
.220 .244  
R
4.32  
4.83  
.170 .190  
Eoff  
mJ  
RthJC  
RthCK  
0.3 K/W  
K/W  
0.15  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGR 120N60B  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
º
@ 25 C  
150  
125  
100  
75  
300  
250  
200  
150  
100  
50  
V
= 15V  
13V  
11V  
V
= 15V  
13V  
11V  
GE  
GE  
9V  
9V  
7V  
7V  
5V  
50  
25  
5V  
0
0
0.6 0.8  
1
1.2 1.4 1.6 1.8  
VC E - Volts  
2
2.2 2.4  
0
-50  
4
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
1.2  
1.2  
1.1  
1.1  
1.0  
1.0  
0.9  
0.9  
0.8  
0.8  
0.7  
150  
125  
100  
75  
V
= 15V  
13V  
GE  
V
= 15V  
GE  
I
= 150A  
C
11V  
9V  
7V  
I
I
= 100A  
= 50A  
C
50  
25  
5V  
C
0
0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
3.6  
3.4  
3.2  
3
= 25ºC  
T
J
I
= 150A  
100A  
50A  
C
2.8  
2.6  
2.4  
2.2  
2
T = 125ºC  
J
25ºC  
-40ºC  
60  
40  
20  
1.8  
1.6  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
6
7
8
9
10  
11  
12  
13  
14  
15  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGR 120N60B  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
160  
140  
120  
100  
80  
10  
9
T = 125ºC  
J
V
= 15V  
T = -40ºC  
GE  
CE  
J
8
25ºC  
125ºC  
V
= 480V  
7
I
I
= 100A  
= 50A  
C
C
6
5
60  
4
40  
3
2
20  
1
0
2
3
4
5
6
7
8
9
10  
0
20  
40  
60  
80 100 120 140 160 180  
R
- Ohms  
I C - Amperes  
G
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
5
5
4
4
3
3
2
2
6
5
5
4
4
3
3
2
2
1
R
= 2.7Ω  
G
V
= 15V  
GE  
CE  
I
= 100A  
C
T = 125ºC  
J
V
= 480V  
R
= 2.7Ω  
G
V
= 15V  
GE  
CE  
V
= 480V  
T = 25ºC  
J
I
= 50A  
C
50 55 60 65 70 75 80 85 90 95 100  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
T - Degrees Centigrade  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
700  
600  
500  
400  
300  
200  
100  
350  
300  
250  
200  
150  
100  
50  
td(off)  
I
= 50A  
100A  
C
tfi  
- - - - - -  
td(off)  
- - - - -  
T = 125ºC  
J
tfi  
R
V
= 15V  
GE  
CE  
T = 125ºC  
J
= 2.7Ω  
G
V
= 480V  
T = 25ºC  
J
V
V
= 15V  
GE  
= 480V  
CE  
I
= 100A  
50A  
C
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGR 120N60B  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
16  
14  
12  
10  
8
350  
300  
250  
200  
150  
100  
50  
I
= 50A  
C
V
= 300V  
CE  
I
I
= 100A  
C
G
td(off)  
, tfi  
- - - - -  
I
= 100A  
C
= 10mA  
R
= 2.7Ω, V  
GE  
= 15V  
G
V
CE  
= 480V  
6
I
= 100A  
50A  
C
4
2
0
25 35 45 55 65 75 85 95 105 115 125  
0
100  
200  
300  
400  
500  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
100000  
10000  
1000  
220  
200  
180  
160  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
60  
R
= 2.7Ω  
G
40  
dV/dT < 5V/ns  
20  
C
res  
25  
100  
0
0
5
10  
15  
20  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600  
VC E - Volts  
VC E - Volts  
Fig. 17. M axim um Trans ie nt The rm al Re s is tance  
1
0.1  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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