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IXXH30N60B3D1

型号：

IXXH30N60B3D1

描述：

XPTTM 600V IGBT GenX3TM W /二极管[ XPTTM 600V IGBT GenX3TM w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

199 K

下载PDF手册
Preliminary Technical Information  
XPTTM 600V IGBT  
GenX3TM w/ Diode  
VCES = 600V  
IC110 = 30A  
VCE(sat) ≤ 1.85V  
tfi(typ) = 125ns  
IXXH30N60B3D1  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
60  
30  
30  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
115  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
20  
A
250  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 10Ω  
Clamped Inductive Load  
ICM = 48  
A
μs  
W
(RBSOA)  
@VCE ≤ VCES  
z Optimized for 5-30kHz Switching  
z Square RBSOA  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Capability  
(SCSOA)  
RG = 82Ω, Non Repetitive  
PC  
TC = 25°C  
270  
z Short Circuit Capability  
z International Standard Package  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z High Power Density  
z 175°C Rated  
z Extremely Rugged  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z Motor Drives  
z SMPS  
5.5  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
100 μA  
1 mA  
TJ = 150°C  
TJ = 150°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 24A, VGE = 15V, Note 1  
1.66  
1.97  
1.85  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100334A(01/13)  
IXXH30N60B3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 1  
8
14  
S
Cies  
Coes  
Cres  
1185  
137  
25  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg(on)  
Qge  
Qgc  
39  
9
nC  
nC  
nC  
IC = 24A, VGE = 15V, VCE = 0.5 • VCES  
17  
td(on)  
tri  
Eon  
td(off)  
tfi  
23  
36  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 24A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
0.55  
97  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
150  
VCE = 400V, RG = 10Ω  
125  
0.50  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
0.80 mJ  
f
td(on)  
tri  
23  
34  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 24A, VGE = 15V  
Eon  
td(off)  
tfi  
1.10  
112  
180  
0.70  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 10Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.55 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
100  
25  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
0.9 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH30N60B3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
VGE = 15V  
120  
100  
80  
60  
40  
20  
0
14V  
13V  
12V  
14V  
11V  
10V  
13V  
12V  
11V  
9V  
8V  
10V  
9V  
8V  
6V  
7V  
0
0
0
8
0.5  
1
1.5  
2
2.5  
3
3.5  
15  
0
-50  
4
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
VGE = 15V  
14V  
13V  
12V  
I C = 48A  
11V  
10V  
9V  
I C = 24A  
8V  
I C = 12A  
7V  
5V  
0
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
TJ = 25ºC  
I C = 48A  
TJ = 150ºC  
25ºC  
- 40ºC  
24A  
12A  
9
10  
11  
12  
13  
14  
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH30N60B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
22  
20  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
C = 24A  
I G = 10mA  
I
25ºC  
150ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
0
1
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
res  
TJ = 150ºC  
RG = 10  
C
Ω
dv / dt < 10V / ns  
0
10  
100  
200  
300  
400  
500  
600  
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1000  
100  
10  
1
VCE(sat) Limit  
0.1  
25µs  
100µs  
0.01  
0.001  
1ms  
1
TJ = 175ºC  
TC = 25ºC  
Single Pulse  
10ms  
DC  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.  
IXXH30N60B3D1  
Fig. 14. Inductive Switching Energy Loss vs.  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
2.5  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
E
E
on - - - -  
off  
off  
RG = 10  
VGE = 15V  
Ω ,  
TJ = 150ºC , VGE = 15V  
VCE = 400V  
2.0  
1.5  
1.0  
0.5  
0.0  
VCE = 400V  
TJ = 150ºC  
I C = 48A  
TJ = 25ºC  
I C = 24A  
10  
15  
20  
25  
30  
35  
40  
45  
50  
10  
25  
10  
20  
30  
40  
50  
60  
70  
80  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
220  
200  
180  
160  
140  
120  
300  
250  
200  
150  
100  
50  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 10  
Ω ,  
VCE = 400V  
VGE = 15V  
TJ = 150ºC, GE = 15V  
V
CE = 400V  
V
I C = 48A  
I C = 24A  
I C = 48A  
I C = 24A  
10  
20  
30  
40  
50  
60  
70  
80  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
200  
180  
160  
140  
120  
100  
80  
130  
120  
110  
100  
90  
300  
260  
220  
180  
140  
100  
60  
180  
160  
140  
120  
100  
80  
tf i  
t
d(off) - - - -  
, VGE = 15V  
t f i  
td(off)  
- - - -  
, VGE = 15V  
RG = 10  
Ω
RG = 10  
Ω
VCE = 400V  
VCE = 400V  
TJ = 150ºC  
I C = 24A  
I C = 48A  
TJ = 25ºC  
80  
70  
60  
60  
60  
20  
40  
25  
50  
75  
100  
125  
150  
15  
20  
25  
30  
IC - Amperes  
35  
40  
45  
50  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH30N60B3D1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
80  
70  
60  
50  
40  
30  
20  
10  
30  
28  
26  
24  
22  
20  
18  
16  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
tr i  
t r i  
td(on) - - - -  
RG = 10  
, VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 25ºC, 125ºC  
I C = 24A  
I C = 48A  
60  
40  
20  
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
10  
20  
30  
40  
50  
60  
70  
80  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
28  
tr i  
td(on)  
- - - -  
27  
26  
25  
24  
23  
22  
21  
RG = 10  
, VGE = 15V  
Ω
VCE = 400V  
I C = 48A  
I C = 24A  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.  
IXXH30N60B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ = 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ =150°C  
TVJ =100°C  
TVJ = 25°C  
0
A/μs  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
-diF/dt  
Fig. 24. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 23. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 22. Forward Current IF Versus VF  
2.0  
90  
20  
1.00  
μs  
TVJ = 100°C  
TVJ = 100°C  
IF = 30A  
VR = 300V  
V
ns  
VFR  
15  
tfr  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
IF = 60A  
IF = 30A  
80  
VFR  
IF = 15A  
1.0  
10  
5
IRM  
70  
Qr  
0.5  
0.0  
60  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Recovery Time trr Versus  
-diF/dt  
Fig. 28. Peak Forward Voltage VFR  
and tfr Versus diF/dt  
Fig. 25. Dynamic Parameters Qr, IRM  
Versus TVJ  
1
K/W  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 28. Transient Thermal Resistance Junction to Case  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_30N60B3D1(4D)05-06-11  
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