RoHS
PZT4403
SOT-223
PZT4403 TRANSISTOR (PNP)
FEATURES
Power dissipation
1. BASE
2. COLLECTOR
3. EMITTER
PCM:
1
W (Tamb=25℃)
Collector current
ICM: -0.6
A
Collector-base voltage
V(BR)CBO: -40
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=-100µA,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-100µA,IC=0
-40
-40
-6
V
V
V
ICBO
IEBO
VCB=-40V,IE=0
-50
-50
nA
nA
Emitter cut-off current
VEB=-5V,IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
30
60
DC current gain
VCE=-1V,IC=-10mA
VCE=-1V,IC=-150mA
VCE=-2V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-20mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VEB=-0.5V,IC=0,f=1MHz
100
100
20
300
-0.4
-0.75
-0.95
-1.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Collector capacitance
Emitter capacitance
Delay time
200
MHz
pF
pF
nS
CC
8.5
35
15
CE
td
WEJ ELECTRONIC CO.,LTD
Rise time
Storage time
Fall time
tr
tS
tf
30
300
50
nS
nS
nS
V
CC=-29.5V, IC=-150mA
VBB=3.5V,IB1=- IB2=-15mA
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WEJ ELECTRONIC CO.
