RoHS
PZT3906
SOT-223
PZT3906 TRANSISTOR (PNP)
FEATURES
Power dissipation
1. BASE
2. COLLECTOR
3. EMITTER
PCM:
1
W (Tamb=25℃)
Collector current
ICM: -0.2
Collector-base voltage
V(BR)CBO: -40
A
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=-10µA,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-10µA,IC=0
-40
-40
-5
V
V
V
ICBO
ICEO
VCB=-30V,IE=0
-0.05
-0.5
µA
µA
Emitter cut-off current
VCE=-30V,IB=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
60
80
DC current gain
100
60
300
30
-0.25
-0.4
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.65
250
-0.85
-0.95
V
V
Transition frequency
MHz
pF
Collector output capacitance
Cob
VCB=-0.5V,IE=0,f=100KHz
VCE=-5V,Ic=-0.1mA,
4.5
4
Noise figure
Delay Time
NF
td
dB
f=10HZ to15.7KHz,Rg=1KΩ
35
nS
VCC=-3.0Vdc,VBE=-0.5Vdc
WEJ ELECTRONIC CO.,LTD
IC=-10mAdc,IB1=-1.0mAdc
Rise Time
Storage Time
Fall Time
tr
ts
tf
35
225
75
nS
nS
nS
VCC=-3.0Vdc,IC=-10mAdc
IB1=IB2=-1.0mAdc
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WEJ ELECTRONIC CO.
