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IXFT150N20T

型号：

IXFT150N20T

描述：

N沟道增强模式额定雪崩快速内在整流器[ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

187 K

下载PDF手册
Advance Technical Information  
TrenchTM HiperFETTM  
Power MOSFETs  
VDSS = 200V  
ID25 = 150A  
RDS(on) ≤ 15mΩ  
IXFT150N20T  
IXFH150N20T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
200  
200  
V
V
VDGR  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
150  
375  
A
A
G
D
D (Tab)  
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
75  
1.5  
A
J
G = Gate  
S = Source  
D
= Drain  
PD  
TC = 25°C  
890  
20  
W
Tab = Drain  
dv/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
V/ns  
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 to +150  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
High Current Handling Capability  
Fast Intrinsic Rectifier  
Low RDS(on)  
z
z
z
z
TSOLD  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
200  
3.0  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
Applications  
±200 nA  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
IDSS  
25 μA  
z
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.5 mA  
z
RDS(on)  
15 mΩ  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
z
z
z
z
High Speed Power Switching  
Applications  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100426(12/11)  
IXFT150N20T  
IXFH150N20T  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
66  
112  
S
Ciss  
Coss  
Crss  
11.7  
1250  
162  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
43  
12  
45  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
Qg(on)  
Qgs  
177  
70  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
44  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
150  
600  
1.4  
IS  
VGS = 0V  
A
A
V
TO-247 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
IRM  
QRM  
100  
8.0  
0.4  
ns  
A
μC  
∅ P  
IF = 75A, -di/dt = 100A/μs,  
VR = 75V, VGS = 0V  
1
2
3
e
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFT150N20T  
IXFH150N20T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
0
5
10  
15  
20  
150  
150  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
150  
100  
50  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
I D = 150A  
6V  
I D = 75A  
5V  
4V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
280  
60  
40  
20  
0
40  
80  
120  
160  
200  
240  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT150N20T  
IXFH150N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 100V  
D = 75A  
I G = 10mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
25µs  
C
iss  
100µs  
C
C
oss  
1ms  
1
T
T
= 150ºC  
= 25ºC  
J
C
10ms  
Single Pulse  
rss  
DC  
100ms  
0.1  
1
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT150N20T  
IXFH150N20T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
18  
17  
16  
15  
14  
13  
12  
11  
10  
18  
17  
16  
15  
14  
13  
12  
11  
10  
RG = 2Ω , VGS = 10V  
DS = 100V  
RG = 2ꢀ , VGS = 10V  
VDS = 100V  
V
TJ = 125ºC  
I D = 75A  
I D = 150A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
70  
80  
90  
100  
110  
120  
130  
140  
150  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
240  
200  
160  
120  
80  
130  
24  
20  
16  
12  
8
65  
60  
55  
50  
45  
40  
tr  
TJ = 125ºC, VGS = 10V  
DS = 100V  
td(on) - - - -  
tf  
RG = 2ꢀ, VGS = 10V  
DS = 100V  
td(off)  
- - - -  
110  
90  
70  
50  
30  
10  
V
V
I D = 150A  
I D = 75A  
I D = 75A  
I D = 150A  
40  
4
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
19  
18  
17  
16  
15  
14  
13  
12  
11  
75  
70  
65  
60  
55  
50  
45  
40  
35  
240  
200  
160  
120  
80  
300  
250  
200  
150  
100  
50  
t f  
RG = 2ꢀ, VGS = 10V  
DS = 100V  
td(off  
) - - - -  
t f  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 100V  
I D = 150A  
V
TJ = 125ºC  
I D = 75A  
TJ = 25ºC  
40  
0
0
2
4
6
8
10  
RG - Ohms  
12  
14  
16  
18  
70  
80  
90  
100  
110  
120  
130  
140  
150  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT150N20T  
IXFH150N20T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_150N20T(8G)12-14-11  
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