请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGR40N60B2D1

型号：

IXGR40N60B2D1

描述：

C2级高速的IGBT （电隔离背面）[ C2-Class High Speed IGBTs (Electrically Isolated Back Surface) ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

502 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS247TM  
VCES  
IC25  
= 600 V  
= 75 A  
IXGR 40N60B2  
IXGR 40N60B2D1  
VCE(sat) = 1.9 V  
tfityp = 82 ns  
C2-Class High Speed IGBTs  
(Electrically Isolated Back Surface)  
Optimized for 10-25 KHz hard switching  
and up to 150 KHz resonant switching  
Preliminary Data Sheet  
D1  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXGR)  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
(ISOLATED TAB)  
C = Collector,  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
60  
33  
A
A
A
A
G = Gate,  
E=Emitter  
TC = 110°C  
TC = 110°C  
(IXGR40N60B2D1)  
25  
TC = 25°C, 1 ms  
200  
Features  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
ICM = 80  
A
(RBSOA)  
z
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
PC  
TC = 25°C  
167  
W
z
z
z
z
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
- drive simplicity  
-55 ... +150  
VISOL  
50/60 Hz RMS, t = 1m  
2500  
V
Applications  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
Weight  
Symbol  
6
g
z
z
z
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Advantages  
min. typ. max.  
z
Easy assembly  
High power density  
Very fast switching speeds for high  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
z
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
50  
µA  
frequency applications  
TJ = 150°C  
1
100  
1.9  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
IC = 30 A, VGE = 15 V  
VCE(sat)  
TJ = 25°C  
© 2004 IXYS All rights reserved  
DS99162A(05/04)  
IXGR 40N60B2  
IXGR 40N60B2D1  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS 247 Outline  
IC = 30 A; VCE = 10 V,  
20  
36  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
2560  
210  
54  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 30 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
100  
15  
nC  
nC  
nC  
Qge  
Qgc  
36  
td(on)  
tri  
td(off)  
tfi  
18  
20  
ns  
ns  
IC = 30 A, VGE = 15 V  
VCE = 400 V, RG = 3.3 Ω  
130  
82  
200 ns  
150 ns  
0.8 mJ  
Eoff  
0.4  
td(on)  
tri  
18  
20  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 30 A, VGE = 15 V  
Eon  
td(off)  
tfi  
0.3  
mJ  
ns  
240  
150  
1.10  
VCE = 400 V, RG = 3.3 Ω  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.75 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 30 A, VGE = 0 V, Pulse test  
TJ =150°C  
1.6  
2.5  
V
V
t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C  
4
A
ns  
ns  
VR = 100 V  
TJ = 100°C 100  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
25  
RthJC  
0.9  
1.1 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
IXGR 40N60B2  
IXGR 40N60B2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
60  
50  
40  
30  
20  
10  
0
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
7V  
5V  
60  
30  
5V  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
7
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
9V  
13V  
VGE = 15V  
11V  
IC = 60A  
7V  
IC = 30A  
IC = 15A  
5V  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
4
3.5  
3
180  
150  
120  
90  
TJ = 25ºC  
IC = 60A  
30A  
15A  
2.5  
2
60  
TJ = 125ºC  
25ºC  
-40ºC  
1.5  
1
30  
0
6
7
8
9
10 11 12 13 14 15 16 17  
3
4
5
6
7
8
9
10  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGR 40N60B2  
IXGR 40N60B2D1  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
3
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
TJ = -40ºC  
25ºC  
125ºC  
IC = 60A  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
IC = 30A  
IC = 15A  
3
6
9
12  
15  
18  
21  
24  
27  
30  
0
15  
3
30  
60  
90  
120  
150  
180  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Ene r gy on Ic  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
IC = 60A  
TJ = 125ºC  
TJ = 25ºC  
IC = 30A  
IC = 15A  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on Ic  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
td(off)  
td(off)  
tfi - - - - - -  
RG = 3.3Ω  
VGE = 15V  
tfi - - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
V
CE = 400V  
TJ = 125ºC  
IC = 15A  
IC = 30A  
IC = 60A  
TJ = 25ºC  
6
9
12  
15 18  
R G - Ohms  
21  
24  
27  
30  
15  
20  
25  
30  
35  
40  
I C - Amperes  
45  
50  
55  
60  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGR 40N60B2  
IXGR 40N60B2D1  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
275  
250  
225  
200  
175  
150  
125  
100  
75  
15  
12  
9
VCE = 300V  
IC = 30A  
IG = 10mA  
td(off)  
tfi - - - - - -  
RG = 3.3Ω  
VGE = 15V  
VCE = 400V  
IC = 15A  
6
IC = 30A  
IC = 60A  
3
0
0
10 20 30 40 50 60 70 80 90 100  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
Fig . 13. Maximu m Transien t Thermal Resistan ce  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGR 40N60B2  
IXGR 40N60B2D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 17 Forward current IF versus VF  
2.0  
Fig. 18 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 19 Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
µs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 20 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 21 Recovery time trr versus -diF/dt  
Fig. 22 Peak forward voltage VFR and  
tfr  
versus diF/dt  
10  
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
4
0.436  
0.482  
0.117  
0.115  
0.0055  
0.0092  
0.0007  
0.0418  
ZthJC  
0.1  
0.01  
0.001  
0.0001  
DSEP 2x31-06B  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 23 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.216110s