IXD611
IXD611
600V, 600 mA High & Low-side Driver
for N-Channel MOSFETs and IGBTs
Features
General Description
• Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
• Fully operational to 600V
The IXD611, with its two inputs referenced to ground, has high
speed low side and high side gate ouptuts to drive either a pair
of N-channel MOSFETs or IGBTs in a half-bridge totem pole
configuration. The High Side driver can control a MOSFET or
IGBT connected to a positive high voltage up to 600V. The logic
input stages are compatible with TTL or CMOS, have built-in
hysteresis and are fully immune to latch up over the entire
operating range. The IXD611 can withstand dV/dt on the output
side up to ± 50V/ns.
• ± 50V/ns dV/dt immunity
• Gate drive power supply range: 10 - 35V
• Undervoltagelockoutforbothoutputdrivers
• Outputs are in phase with inputs
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up protected over entire
operating range
• High peak output current: ± 600 mA
• Matched propagation delay for both outputs
• Lowoutputimpedance
The IXD611 comes in either the 8-PIN PDIP (IXD611P1), 8-PIN
SOIC (IXD611S1), 14-PIN PDIP (IXD611P7), or the 14-PIN
SOIC (IXD611S7) packages.
• Low power supply current
•Immunetonegativevoltagetransients
Ordering Information
Part Number
PackageType
IXD611P1
IXD611P7
IXD611S1
IXD611S7
8-PIN DIP
14-PIN DIP
8-PIN SOIC
14-PIN SOIC
Applications
• Driving MOSFETs and IGBTs in half-bridge circuits
• High voltage, high side and low side drivers
• Motor Controls
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Class D Switching Amplifiers
Warning: The IXD611 is ESD sensitive.
Figure 1A. Typical Circuit for IXD611P7/S7
Figure 1B. Typical Circuit for IXD611P1/S1
Up to 600V
Up to 600V
HGO
HGO
VCH
VCL
VCH
VCL
VCC
HIN
LIN
VCC
HIN
LIN
To Load
To Load
HIN
LIN
HS
HIN
HS
LIN
LS
LGO
LGO
LS
GND
DG
GND
© 2007 IXYS CORPORATION All rights reserved
DS99198A(10/07)
1
First Release