SMD Type
Transistors
Product specification
FZT788B
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-15
-15
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter Cut-Off Current
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
ICBO
IEBO
VCB=-10V
VEB=-4V
-0.1
-0.1
ìA
ìA
IC=-0.5A, IB=-2.5mA
IC=-1A, IB=-5mA
IC=-2A, IB=-10mA
IC=-3A, IB=-50mA
-0.15
-0.25
-0.45
-0.5
Collector-emitter saturation voltage *
VCE(sat)
V
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-1A, IB=-5mA
VBE(on) IC=-1A, VCE=-2V
IC=-10mA,VCE=-2V *
-0.9
V
V
-0.75
500
400
300
150
100
1500
IC=-1A, VCE=-2V*
hFE
IC=-2A, VCE=-2V*
Static Forward Current Transfer Ratio
IC=-6A, VCE=-2V*
Transitional frequency
Input capacitance
Output capacitance
Turn-on time
fT
IC=-50mA, VCE=-5V, f=50MHz
MHz
pF
Cibo
Cobo
t(on)
t(off)
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
225
25
pF
35
ns
Turn-off time
400
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT788B
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
