SMD Type
Transistors
Product specification
FZT653
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Testconditons
Min Typ. Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=100ìA
IC=10mA*
IE=100ìA
VCB=100V
120
100
5
V
V
0.1
10
ìA
ìA
ìA
V
Collector Cut-Off Current
ICBO
IEBO
VCB=100V,Tamb=100
VEB=4V
Emitter Cut-Off Current
0.1
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
IC=1A, VCE =2V*
0.13
0.23
0.9
0.3
0.5
Collector-Emitter Saturation Voltage
VCE(sat)
V
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
1.25
1.0
V
0.8
V
IC=50mA, VCE =2V*
IC=500mA, VCE =2V*
IC=1A, VCE =2V*
70
100
55
200
200
110
55
300
Static Forward Current Transfer Ratio
hFE
IC=2A, VCE =2V*
25
Transition Frequency
Output Capacitance
fT
Cobo
ton
IC=100mA, VCE =5V,f=100MHz
VCB=10V, f=1MHz
IC=500mA, VCC =10V
IB1=IB2=50mA
140
175
MHz
pF
30
80
ns
Switching Times
toff
1200
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT653
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