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PXT4401

型号:

PXT4401

描述:

大电流(最大600 mA)的[ High current (max. 600 mA) ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

112 K

Product specification  
PXT4401  
Features  
High current (max. 600 mA)  
Low voltage (max. 40 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
40  
V
5
V
600  
800  
200  
mA  
mA  
mA  
Peak collector current  
Peak base current  
ICM  
IBM  
Ptot  
* 1  
* 2  
* 3  
0.5  
0.8  
1.1  
Total power dissipation  
W
Storage temperature  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Ramb  
Rth(j-a)  
-65 to +150  
* 1  
* 2  
* 3  
250  
156  
113  
Thermal resistance from junction to ambient  
K/W  
K/W  
Thermal resistance from junction to soldering point  
Rth(j-s)  
30  
*1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard ---  
----footprint.  
*2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -  
- -pad for collector 1 cm2.  
*3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting --  
----pad for collector 6 cm2.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
PXT4401  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = 60 V  
Min  
100  
Typ  
Max  
50  
Unit  
nA  
IEBO  
IC = 0; VEB = 6 V  
50  
nA  
hFE  
VCE = 1 V, IC = 150 mA  
300  
400  
750  
950  
1.2  
8
mV  
mV  
mV  
V
IC = 150 mA; IB = 15 mA  
collector-emitter saturation voltage  
base-emitter saturation voltage *  
*
VCEsat  
IC = 500 mA; IB = 50 mA  
IC = 150 mA; IB = 15 mA  
VBEsat  
IC = 500 mA; IB = 50 mA  
Collector capacitance  
Emitter capacitance  
Transition frequency  
Cc  
Ce  
fT  
pF  
IE = iE = 0; VCB = 5 V; f = 1 MHz  
IC = iC = 0; VEB = 500 mV; f = 1 MHz  
30  
pF  
250  
MHz  
IC = 20 mA; VCE = 10 V; f = 100 MHz  
ICon = 150 mA; IBon = 15 mA;  
IBoff = -15 mA  
Turn-on time  
Delay time  
Rise time  
ton  
td  
35  
15  
ns  
ns  
ns  
ns  
ns  
ns  
tr  
20  
Turn-off time  
Storage time  
Fall time  
toff  
ts  
250  
200  
60  
tf  
* Pulse test: tp  
300 ms; ä  
0.02.  
Marking  
Marking  
2X  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  
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