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PXT2222A

型号:

PXT2222A

描述:

大电流(最大600 mA)的[ High current (max. 600 mA) ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

114 K

Product specification  
PXT2222A  
Features  
High current (max. 600 mA)  
Low voltage (max. 40 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
40  
V
6
V
100  
200  
100  
mA  
mA  
mA  
Peak collector current  
Peak base current  
ICM  
IBM  
Ptot  
* 1  
* 2  
* 3  
0.5  
0.8  
1.1  
Total power dissipation  
W
Storage temperature  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Ramb  
Rth(j-a)  
-65 to +150  
* 1  
* 2  
* 3  
250  
156  
113  
Thermal resistance from junction to ambient  
K/W  
K/W  
Thermal resistance from junction to soldering point  
Rth(j-s)  
30  
*1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard ---  
----footprint.  
*2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -  
- -pad for collector 1 cm2.  
*3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting --  
----pad for collector 6 cm2.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
PXT2222A  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = 60 V  
Min  
Typ  
Max  
10  
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
10  
ìA  
nA  
IE = 0; VCB = 60 V; Tj = 125  
IC = 0; VEB = 5 V  
IEBO  
10  
IC = 0.1 mA; VCE = 10V  
IC = 1 mA; VCE = 10 V  
IC = 10 mA; VCE = 10 V  
IC = 10 mA; VC = 10 V; Tj = -55  
IC = 150 mA; VCE = 1 V  
VCE = 10 V, IC = 150 mA  
IC = 500 mA; VCE = 10 V  
35  
50  
75  
35  
DC current gain  
hFE  
50  
100  
40  
300  
300  
1
mV  
V
IC = 150 mA; IB = 15 mA  
collector-emitter saturation voltage  
base-emitter saturation voltage  
VCEsat  
IC = 500 mA; IB = 50 mA  
0.6  
1.2  
2
V
IC = 150 mA; IB = 15 mA  
VBEsat  
V
IC = 500 mA; IB = 50 mA  
Collector capacitance  
Emitter capacitance  
Transition frequency  
Cc  
Ce  
fT  
8
pF  
pF  
MHz  
IE = iE = 0; VCB = 10 V; f = 1 MHz  
IC = iC = 0; VEB = 500 mV; f = 1 MHz  
IC = 20 mA; VCE = 10 V; f = 100 MHz  
25  
300  
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ;  
f = 1 kHz; B = 200 Hz  
Noise figure  
Turn-on time  
Delay time  
Rise time  
F
ton  
td  
4
dB  
ns  
ns  
ns  
ns  
ns  
ns  
ICon = 150 mA; IBon = 15 mA;  
IBoff = -15 mA  
35  
15  
tr  
20  
Turn-off time  
Storage time  
Fall time  
toff  
ts  
250  
200  
60  
tf  
Marking  
Marking  
1P  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  
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