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KX020N06

型号:

KX020N06

描述:

VDS (V ) = 60V, ID = 2 A( VGS = 10V ) RDS ( ON ) 200米( VGS = 10V )[ VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

470 K

e
M O S FIECT  
MOSFIECT  
SMD Type  
Product specification  
KX020N06  
U
n
i
t
:
m
m
S
O
T
-
8
9
1
.
5
0
±
0
.
1
4
.
5
0
±
0
.
1
Features  
1
.
8
0
±
0
.
1
VDS (V) = 60V  
ID = 2 A (VGS = 10V)  
Ω
200m (V = 10V)  
DS(ON)  
DS(ON)  
GS  
R
R
3
1
2
0
.
4
4
±
0
.
1
Ω
GS  
280m (V = 4.5V)  
0
.
4
8
±
0
.
1
0
.
5
3
±
0
.
1
Ω
340m (VGS = 4V)  
RDS(ON)  
3
.
0
0
±
0
.
1
1 Gate  
2 Drain  
DRAIN  
3 Source  
GATE  
2  
1  
SOURCE  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
60  
Unit  
V
Gate-Source Voltage  
VGS  
±20  
D
Continuous Drain Current  
Pulsed Drain Current  
I
±2  
±8  
A
DM  
I
500  
2
D
P
Power Dissipation  
W
thJA  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction and Storage Temperature Range  
R
250  
62.5  
/W  
Rthc  
J
STG  
T , T  
-55 to 150  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1 of 2  
e
M O S FIECT  
M O S FIECT  
MOSFIECT  
SMD Type  
Product specification  
KX020N06  
Electrical Characteristics Ta = 25℃  
Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
Symbol  
VDSS  
Testconditons  
ID=1mA, VGS=0V  
Min  
60  
Typ  
Max  
1
Unit  
V
μ
IDSS  
VDS=60V, VGS=0V  
A
±
GS  
±
μ
GSS  
I
DS  
V
=0V, V  
=
20V  
10  
A
VGS(th)  
VDS=10V ID=1mA  
VGS=10V, ID=2A  
1.0  
2.5  
200  
280  
340  
V
150  
DS(O )  
n
Ω
m
Static Drain-Source On-Resistance  
R
GS  
D
V
V
=4.5V, I =2A  
200  
240  
140  
50  
40  
7.0  
1
GS  
D
=4V, I =2A  
Input Capacitance  
Ciss  
oss  
rss  
VGS=0V, VDS=10V, f=1MHz  
VGS=10V, VDS=30V, ID=2A  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
C
C
Qg  
14  
gs  
gd  
nC  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
Q
Q
2
td(on)  
7.0  
10  
22  
18  
r
t
Ω
Ω
VGS=10V, VDS=30V, RL=30 ,RGEN=10  
ns  
V
d(off)  
t
, I D=1A  
tf  
SD  
V
S
GS  
Diode Forward Voltage  
I =2A,V =0V  
1.2  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  
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