e
M O S FIECT
M O S FIECT
MOSFIECT
SMD Type
SMD Type
SDSMMIPDDTTTyyypppeee
Product specification
KX020N06
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
Testconditons
ID=1mA, VGS=0V
Min
60
Typ
Max
1
Unit
V
μ
IDSS
VDS=60V, VGS=0V
A
±
GS
±
μ
GSS
I
DS
V
=0V, V
=
20V
10
A
VGS(th)
VDS=10V ID=1mA
VGS=10V, ID=2A
1.0
2.5
200
280
340
V
150
DS(O )
n
Ω
m
Static Drain-Source On-Resistance
R
GS
D
V
V
=4.5V, I =2A
200
240
140
50
40
7.0
1
GS
D
=4V, I =2A
Input Capacitance
Ciss
oss
rss
VGS=0V, VDS=10V, f=1MHz
VGS=10V, VDS=30V, ID=2A
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
C
Qg
14
gs
gd
nC
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Q
Q
2
td(on)
7.0
10
22
18
r
t
Ω
Ω
VGS=10V, VDS=30V, RL=30 ,RGEN=10
ns
V
d(off)
t
, I D=1A
tf
SD
V
S
GS
Diode Forward Voltage
I =2A,V =0V
1.2
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