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3SK265-6

型号:

3SK265-6

描述:

晶体管| MOSFET | N沟道| 15V V( BR ) DSS |我30MA (D ) | SOT- 143R\n[ TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R ]

品牌:

ETC[ ETC ]

页数:

3 页

PDF大小:

83 K

Ordering number:ENN4902  
N-Channel Silicon MOSFET  
3SK265  
VHF, CATV Tuner,  
High-Frequency Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· Enhancement type.  
· Easy AGC (Cut off at V =0V).  
· Small noise figure.  
· High power gain.  
G2S  
2096A  
[3SK265]  
1.9  
· Ideally suited for RF amplifier of CATV wide-band  
0.95  
0.95  
0.4  
0.16  
tuners.  
4
3
0 to 0.1  
1
2
0.6  
0.95 0.85  
2.9  
1 : Drain  
2 : Source  
3 : Gate 1  
4 : Gate 2  
SANYO : CP4  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
15  
V
V
DS  
Gate1-to-Source Voltage  
Gate2-to-Source Voltage  
Drain Current  
V
±8  
G1S  
V
±8  
30  
V
G2S  
I
mA  
mW  
˚C  
˚C  
D
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
D
Tch  
200  
125  
Tstg  
–55 to +125  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
15  
max  
Drain-to-Source Voltage  
V
V
V
V
V
V
V
V
=0V, V =0V, I =100µA  
G2S DS  
V
V
DS  
G1S  
Gate1-to-Source Cutoff Voltage  
Gate2-to-Source Cutoff Voltage  
Gate1-to-Source Leakage Current  
Gate2-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
Forward Transfer Admittance  
V
V
=6V, V  
=4V, I =100µA  
D
=3V, I =100µA  
D
=V =0V  
G2S DS  
=V =0V  
G1S DS  
0
0.7  
1.3  
G1S(off)  
G2S(off)  
DS  
G2S  
G1S  
=±6V, V  
=6V, V  
0.1  
0.9  
1.6  
±50  
V
DS  
I
nA  
nA  
mA  
mS  
G1SS  
G1S  
G2S  
I
=±6V, V  
±50  
G2SS  
I
=6V, V  
=1.2V, V  
=4V  
5.0*  
24.0*  
DSX  
DS  
DS  
G1S  
=6V, I =10mA, V  
G2S  
=4V, f=1kHz  
| yfs |  
22  
D
G2S  
* : The 3SK265 is classified by I  
Marking : TJ  
as follows : (unit : mA)  
Continued on next page.  
DSX  
5.0  
5
12.0 10.0  
6
24.0  
I
rank : 5, 6  
DSX  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82599TH (KT)/32295TS (KOTO) BX-1490 No.4902–1/3  
3SK265  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Crss  
PG  
V
V
V
V
=6V, V  
=6V, V  
=0V, V  
=4V, f=1MHz  
4.0  
pF  
pF  
dB  
dB  
DS  
DS  
DS  
DS  
G1S  
G1S  
G2S  
G2S  
=0V, V  
=4V, f=1MHz  
0.015  
26  
0.03  
=6V, I =10mA, V  
D
=6V, I =10mA, V  
D
=4V, f=200MHz  
=4V, f=200MHz  
23  
G2S  
G2S  
Noise Figure  
NF  
1.1  
2.2  
PG, NF Specified Test Circuit  
No.4902–2/3  
3SK265  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of August, 1999. Specifications and information herein are subject to  
change without notice.  
PS No.4902–3/3  
厂商 型号 描述 页数 下载

ETC

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ETC

3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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