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3SK254(NE93218)

型号:

3SK254(NE93218)

描述:

分离\n[ Discrete ]

品牌:

ETC[ ETC ]

页数:

7 页

PDF大小:

100 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK254  
RF AMPLIFIER FOR CATV TUNER  
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Low VDD Use  
:
(VDS = 3.5 V)  
(Unit: mm)  
Driving Battery  
2.1±±.2  
Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)  
NF2 = 0.8 dB TYP. (f = 55 MHz)  
1.25±±.1  
High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting : Embossed Type Taping  
Small Package  
:
4 Pins Super Mini Mold  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
8*1  
8*1  
V
V
V
18  
V
18  
V
25  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PD  
130*2  
Tch  
125  
Tstg  
–55 to +125  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate2  
4. Gate1  
*1: RL 10 kΩ  
*2: Free air  
PRECAUTION:  
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage  
or fields.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU1±±33EJ±1V±DS (1st edition)  
(Previous No. P1±585EJ2V±DS±±)  
Date Published October 2±±1 CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
NEC Corporation 1993  
NEC Compound Semiconductor Devices 2001  
3SK254  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain Current  
SYMBOL  
BVDSX  
IDSX  
MIN.  
18  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
VG1S = VG2S = –2 V, ID = 10 µA  
0.1  
–1.0  
0
5.0  
+1.0  
1.0  
20  
mA  
V
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.5 V  
VDS = 3.5 V, VG2S = 3 V, ID = 10 µA  
VDS = 3.5 V, VG1S = 3 V, ID = 10 µA  
VDS = 0, VG2S = 0, VG1S = 6 V  
VDS = 0, VG1S = 0, VG2S = 6 V  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
VG1S(off)  
VG2S(off)  
IG1SS  
0
0.5  
V
nA  
nA  
Gate2 Reverse Current  
IG2SS  
20  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 1 kHz  
Forward Transfer Admittance  
|yfs|  
14  
18  
23  
mS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Gps  
2.4  
0.9  
2.9  
1.2  
0.01  
19  
3.4  
1.5  
0.03  
22  
pF  
pF  
pF  
dB  
dB  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 1 MHz  
16  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 470 MHz  
Noise Figure 1  
NF1  
2.0  
3.0  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 55 MHz  
Noise Figure 2  
NF2  
0.8  
2.3  
dB  
IDSX Classification  
Rank  
Marking  
IDSX (mA)  
U1E  
U1E  
0.1 to 5.0  
2
Data Sheet PU10033EJ01V0DS  
3SK254  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
25  
20  
15  
10  
5
V
G2S = 3 V  
V
G1S = 1.6 V  
200  
1.4 V  
130 mW  
1.2 V  
1.0 V  
100  
0.8 V  
0.6 V  
0
25  
50  
75  
100  
125  
0
5
10  
T
a
Ambient Temperature – °C  
VDS Drain to Source Voltage V  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
GATE1 TO SOURCE VOLTAGE  
25  
20  
15  
10  
5
40  
32  
24  
16  
8
V
DS = 3.5 V  
3.0 V  
2.5 V  
V
DS = 3.5 V  
f = 1 kHz  
V
G2S = 3.5 V  
2.0 V  
V
G2S = 3.5 V  
3.0 V  
2.0 V 2.5 V  
1.5 V  
1.5 V  
1.0 V  
2.0  
1.0 V  
0
0.5  
1.0  
1.5  
2.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
V
G1S Gate1 to Source Voltage V  
VG1S Gate1 to Source Voltage V  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
40  
32  
24  
16  
8
5.0  
4.0  
3.0  
2.0  
I
D
= 7 mA  
V
DS = 3.5 V  
(at VDS = 3.5 V,  
f = 1 kHz  
VG2S = 3 V)  
f = 1 MHz  
V
G2S = 3.5 V  
3.0 V  
2.5 V  
1.0  
0
1.5 V  
8
2.0 V  
16  
1.0 V  
4
0
12  
20  
1.0  
0
1.0  
2.0  
3.0  
4.0  
ID  
Drain Current mA  
VG2S Gate2 to Source Voltage V  
Data Sheet PU10033EJ01V0DS  
33  
3SK254  
OUTPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
2.5  
2.0  
1.5  
1.0  
10  
I
D
= 7 mA  
I
D
= 7 mA  
G
PS  
20  
10  
(at VDS = 3.5 V,  
(at VDS = 3.5 V,  
VG2S = 3.0 V)  
VG2S = 3.0 V)  
f = 470 MHz  
f = 1 MHz  
5
0
10  
20  
NF  
0.5  
0
0
1.0  
0
1.0  
2.0  
3.0  
4.0  
1.0  
0
1.0  
2.0  
3.0  
4.0  
V
G2S Gate2 to Source Voltage V  
VG2S Gate2 to Source Voltage V  
4
Data Sheet PU10033EJ01V0DS  
3SK254  
GPS AND NF TEST CIRCUIT AT f = 470 MHz  
VG2S  
1 000 pF  
22 kΩ  
1 000 pF  
Ferrite Beads  
40 pF OUTPUT  
INPUT 40 pF  
50 Ω  
L
2
L1  
50 Ω  
1 000 pF  
15 pF  
15 pF  
1 000 pF  
22 kΩ  
L
3
1 000 pF  
1 000 pF  
φ
φ
1.2 mm U.E.W 5 mm 1T  
L1  
L2  
L3  
:
VG1S  
V
DS  
φ
: φ1.2 mm U.E.W 5 mm 1T  
µ
: REC 2.2  
H
NF TEST CIRCUIT AT f = 55 MHz  
VG2S  
VDS  
RFC  
2.2 kΩ  
Ferrite Beads  
1 500 pF  
1 500 pF  
1 000 pF  
47  
OUTPUT  
INPUT  
50 Ω  
47 kΩ  
27 pF  
27 pF  
3.3 kΩ  
3.3  
kΩ  
kΩ  
50 Ω  
1 000 pF  
VG1S  
Data Sheet PU10033EJ01V0DS  
55  
3SK254  
The information in this document is current as of October, 2001. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4 - 0110  
6
Data Sheet PU10033EJ01V0DS  
2SC254  
Business issue  
NEC Compound Semiconductor Devices, Ltd.  
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com  
NEC Compound Semiconductor Devices Hong Kong Limited  
Hong Kong Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
FAX: +852-3107-7309  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-528-0301  
FAX: +82-2-528-0302  
NEC Electron Devices European Operations  
http://www.nec.de/  
TEL: +49-211-6503-101 FAX: +49-211-6503-487  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
Technical issue  
NEC Compound Semiconductor Devices, Ltd.  
http://www.csd-nec.com/  
Sales Engineering Group, Sales Division  
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918  
0110  
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3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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