3SK229
GaAs Dual Gate MES FET
UHF TV Tuner RF Amplifier
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
MPAK-4
Item
——————————————————————–
Drain to source voltage 12
——————————————————————–
Gate 1 to source voltage –6
——————————————————————–
Gate 2 to source voltage –6
——————————————————————–
Drain current 50 mA
——————————————————————–
Channel power dissipation Pch 150 mW
——————————————————————–
Channel temperature Tch 125 °C
——————————————————————–
Storage temperature Tstg –55 to +125 °C
Symbol Rating
Unit
V
V
DS
2
V
V
G1S
3
V
V
1
G2S
4
I
D
1. Source
2. Gate 1
3. Gate 2
4. Drain
——————————————————————–
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test condition
———————————————————————————————————————————————–
Drain to source cutoff current
I
—
—
50
µA
V
V
= 12 V,
DS
DSX
= –4 V, V
= 0
G2S
G1S
———————————————————————————————————————————————–
Gate 1 to source breakdown voltage –6 = –10 µA,
V
—
—
V
I
G1
(BR)G1SS
V
= V
= 0
G2S
DS
———————————————————————————————————————————————–
Gate 2 to source breakdown voltage –6 = –10 µA,
V
—
—
V
I
G2
(BR)G2SS
V
= V
= 0
G1S
DS
———————————————————————————————————————————————–
Gate 1 cutoff current
I
—
—
–5
µA
V
V
= –5 V,
G1SS
G1S
G2S
= V
= 0
DS
———————————————————————————————————————————————–
Gate 2 cutoff current
I
—
—
–5
µA
V
V
= –5 V,
G2SS
G2S
G1S
= V
= 0
DS
———————————————————————————————————————————————–
Drain current
I
15
25
40
mA
V
V
= 5 V,
DSS
DS
= V
= 0
G1S
G2S
———————————————————————————————————————————————–
Gate 1 to source cutoff voltage –1.3 –3.5 = 5 V, V = 0,
V
—
V
V
DS
G1S(off)
G2S
I
= 100 µA
D
———————————————————————————————————————————————–
Gate 2 to source cutoff voltage –1.3 –3.5 = 5 V, V = 0,
V
—
V
V
DS
G2S(off)
G1S
I
= 100 µA
D
———————————————————————————————————————————————–
