IXGR 32N60C
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 OUTLINE
IC = I ; V = 10 V,
25
S
Pulse TtestC,Et ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2700
190
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
110
22
40
nC
nC
nC
IC = IT, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
td(on)
tri
td(off)
tfi
25
20
85
55
ns
ns
170 ns
ns
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
Millimeter
Inches
,
,
Eoff
0.32 0.75 mJ
Min. Max. Min. Max.
A
A12
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
td(on)
tri
Eon
td(off)
tfi
25
25
0.30
110
105
0.85
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 150°C
IC = IT, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
b
b12
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
Eoff
L
19.81 20.32
L1
3.81
4.32
RthJC
RthCK
0.90 K/W
K/W
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
0.15
Note 1:
IT = 32A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
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5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,259,123B1
6,306,728 B1
