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NVTR4502P

型号:

NVTR4502P

描述:

功率MOSFET -30 V, -1.95 A单, P沟道, SOT- 23电池充电电路[ Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

188 K

Product specification  
NTR4502P, NVTR4502P  
Power MOSFET  
V
R
TYP  
I
D
Max (Note 1)  
1.95 A  
(BR)DSS  
DS(on)  
155 mW @ 10 V  
240 mW @ 4.5 V  
30 V, 1.95 A, Single, PChannel,  
SOT23  
30 V  
PChannel MOSFET  
Features  
S
Leading Planar Technology for Low Gate Charge / Fast Switching  
Low R  
for Low Conduction Losses  
DS(ON)  
G
SOT23 Surface Mount for Small Footprint (3 X 3 mm)  
AEC Q101 Qualified NVTR4502P  
These Devices are PbFree and are RoHS Compliant  
Applications  
DC to DC Conversion  
D
Load/Power Switch for Portables and Computing  
Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.  
Battery Charging Circuits  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Drain  
3
TR2 M G  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G
SOT23  
CASE 318  
STYLE 21  
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
2
1
Gate  
Source  
V
DSS  
30  
20  
V
V
A
GatetoSource Voltage  
V
GS  
TR2 = Device Code  
M
G
= Date Code*  
Drain Current (Note 1)  
t < 10 s T = 25°C  
I
D
1.95  
1.56  
1.25  
A
= PbFree Package  
T = 70°C  
A
(Note: Microdot may be in either location)  
Power Dissipation  
(Note 1)  
t < 10 s  
P
D
W
A
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Continuous Drain Current Steady T = 25°C  
I
1.13  
0.90  
0.4  
A
D
(Note 1)  
State  
Steady State  
t = 10 ms  
ORDERING INFORMATION  
T = 70°C  
A
Power Dissipation  
(Note 1)  
P
W
Device  
Package  
Shipping†  
D
NTR4502PT1G  
SOT23  
3000 / Tape & Reel  
Pulsed Drain Current  
I
6.8  
A
(PbFree)  
p
DM  
Operating Junction and Storage Temperature  
T ,  
STG  
55 to  
°C  
J
NVTR4502PT1G  
SOT23  
(PbFree)  
3000 / Tape & Reel  
T
150  
Source Current (Body Diode)  
I
S
1.25  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
(1/8 in from case for 10 s)  
T
L
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
300  
100  
Unit  
JunctiontoAmbient – Steady State (Note 1)  
JunctiontoAmbient – t = 10 s (Note 1)  
R
°C/W  
q
JA  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 in sq. pad size  
(Cu area = 1.127 in sq. [1 oz] including traces).  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
 
Product specification  
NTR4502P, NVTR4502P  
Electrical Characteristics (T = 25°C unless otherwise specified)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
Zero Gate Voltage Drain Current  
V
V
= 0 V, I = 250 mA  
30  
V
(BR)DSS  
GS  
D
I
V
GS  
= 0 V, V = 30 V  
T = 25°C  
1  
mA  
DSS  
DS  
J
T = 55°C  
J
10  
100  
GatetoSource Leakage Current  
TY CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
I
V
= 0 V, V  
=
20 V  
nA  
GSS  
DS  
GS  
V
V
GS  
= V , I = 250 mA  
1.0  
3.0  
200  
350  
V
GS(TH)  
DS  
D
DraintoSource On Resistance  
R
V
GS  
= 10 V, I = 1.95 A  
155  
240  
3
mW  
DS(on)  
D
V
GS  
= 4.5 V, I = 1.5 A  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
V
DS  
= 10 V, I =1.25 A  
S
FS  
D
C
V
= 0 V, f = 1 MHz, V = 15 V  
200  
80  
50  
6
pF  
ISS  
GS  
DS  
Output Capacitance  
C
C
OSS  
RSS  
Reverse Transfer Capacitance  
Total Gate Charge  
Q
V
= 10 V, V = 15 V; I = 1.95 A  
10  
nC  
ns  
G(TOT)  
GS  
DS  
D
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
SWITCHING CHARACTERISTICS (Note 4)  
TurnOn Delay Time  
Q
0.3  
1
G(TH)  
Q
GS  
GD  
Q
1.7  
t
V
=10 V, V = 15 V,  
= 1.95 A, R = 6 W  
5.2  
12  
10  
20  
35  
30  
d(ON)  
GS  
D
DD  
G
I
Rise Time  
t
r
TurnOff Delay Time  
t
19  
d(OFF)  
Fall Time  
t
f
17.5  
DRAINSOURCE DIODE CHARACTERISTICS (Note 3)  
Forward Diode Voltage  
Reverse Recovery Time  
V
V
= 0 V, I = 1.25 A  
0.8  
1.2  
V
SD  
RR  
GS  
S
t
V
GS  
= 0 V, dI /d = 100 A/ms, I = 1.25 A  
23  
ns  
SD  
t
S
2. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).  
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.  
4. Switching characteristics are independent of operating junction temperatures.  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
 
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